KR101254832B1 - 이미지 센서 및 이를 포함하는 카메라 - Google Patents

이미지 센서 및 이를 포함하는 카메라 Download PDF

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Publication number
KR101254832B1
KR101254832B1 KR1020077028074A KR20077028074A KR101254832B1 KR 101254832 B1 KR101254832 B1 KR 101254832B1 KR 1020077028074 A KR1020077028074 A KR 1020077028074A KR 20077028074 A KR20077028074 A KR 20077028074A KR 101254832 B1 KR101254832 B1 KR 101254832B1
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South Korea
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implant
floating diffusion
type
interconnect layer
source drain
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Korean (ko)
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KR20080011684A (ko
Inventor
로버트 마이클 가이다쉬
라비 므루티운자야
웨이즈 슈
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020077028074A 2005-06-02 2006-05-31 이미지 센서 및 이를 포함하는 카메라 Active KR101254832B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68671505P 2005-06-02 2005-06-02
US60/686,715 2005-06-02
US11/440,894 US8253214B2 (en) 2005-06-02 2006-05-25 CMOS shared amplifier pixels with output signal wire below floating diffusion interconnect for reduced floating diffusion capacitance
US11/440,894 2006-05-25
PCT/US2006/020716 WO2006130545A2 (en) 2005-06-02 2006-05-31 Cmos active pixel sensor shared amplifier pixel

Publications (2)

Publication Number Publication Date
KR20080011684A KR20080011684A (ko) 2008-02-05
KR101254832B1 true KR101254832B1 (ko) 2013-04-15

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KR1020077028074A Active KR101254832B1 (ko) 2005-06-02 2006-05-31 이미지 센서 및 이를 포함하는 카메라

Country Status (6)

Country Link
US (1) US8253214B2 (https=)
EP (2) EP1894246B1 (https=)
JP (1) JP5036709B2 (https=)
KR (1) KR101254832B1 (https=)
TW (1) TWI399848B (https=)
WO (1) WO2006130545A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US8913166B2 (en) * 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
JP5422455B2 (ja) 2010-03-23 2014-02-19 パナソニック株式会社 固体撮像装置
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
FR2975529B1 (fr) * 2011-05-20 2013-09-27 Soc Fr Detecteurs Infrarouges Sofradir Circuit de detection a faible flux et faible bruit
US8461660B2 (en) * 2011-09-30 2013-06-11 Omnivision Technologies, Inc. CMOS image sensor with reset shield line
US9190434B2 (en) * 2011-09-30 2015-11-17 Omnivision Technologies, Inc. CMOS image sensor with reset shield line
US9571763B2 (en) * 2014-01-10 2017-02-14 Omnivision Technologies, Inc. Split pixel high dynamic range sensor
US9526468B2 (en) * 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
DE102020111562A1 (de) 2020-04-28 2021-10-28 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
DE102021128022B3 (de) 2021-10-27 2023-02-02 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor

Citations (2)

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Publication number Priority date Publication date Assignee Title
KR20000052598A (ko) * 1998-12-31 2000-08-25 로버트 디. 크루그 화상 센서
JP2004023107A (ja) * 2002-06-20 2004-01-22 Samsung Electronics Co Ltd イメージセンサ及びその製造方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US6107655A (en) 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3219036B2 (ja) * 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置
JPH11274461A (ja) 1998-03-23 1999-10-08 Sony Corp 固体撮像装置とその製造方法
US6750912B1 (en) 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
JP4721380B2 (ja) 2000-04-14 2011-07-13 キヤノン株式会社 固体撮像装置および撮像システム
JP4115152B2 (ja) 2002-04-08 2008-07-09 キヤノン株式会社 撮像装置
JP3795846B2 (ja) 2002-08-29 2006-07-12 富士通株式会社 半導体装置
FR2844398A1 (fr) 2002-09-11 2004-03-12 St Microelectronics Sa Photodetecteur d'un capteur d'images
US7087944B2 (en) 2003-01-16 2006-08-08 Micron Technology, Inc. Image sensor having a charge storage region provided within an implant region
US7859581B2 (en) 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
JP4067054B2 (ja) * 2004-02-13 2008-03-26 キヤノン株式会社 固体撮像装置および撮像システム
JP4230406B2 (ja) 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
US7115925B2 (en) * 2005-01-14 2006-10-03 Omnivision Technologies, Inc. Image sensor and pixel having an optimized floating diffusion
US8130304B2 (en) * 2009-07-24 2012-03-06 Aptina Imaging Corporation Image sensors with pixel charge summing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000052598A (ko) * 1998-12-31 2000-08-25 로버트 디. 크루그 화상 센서
JP2004023107A (ja) * 2002-06-20 2004-01-22 Samsung Electronics Co Ltd イメージセンサ及びその製造方法

Also Published As

Publication number Publication date
US8253214B2 (en) 2012-08-28
EP2276065A3 (en) 2012-04-04
WO2006130545A2 (en) 2006-12-07
JP5036709B2 (ja) 2012-09-26
KR20080011684A (ko) 2008-02-05
JP2008543085A (ja) 2008-11-27
WO2006130545A3 (en) 2007-01-25
US20060273353A1 (en) 2006-12-07
EP1894246B1 (en) 2012-10-31
EP2276065A2 (en) 2011-01-19
TW200703634A (en) 2007-01-16
EP1894246A2 (en) 2008-03-05
TWI399848B (zh) 2013-06-21

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