KR101244573B1 - 이미지 센서와 그 제조 방법 및 이미지 센서를 포함하는디지털 카메라 - Google Patents

이미지 센서와 그 제조 방법 및 이미지 센서를 포함하는디지털 카메라 Download PDF

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KR101244573B1
KR101244573B1 KR1020077027899A KR20077027899A KR101244573B1 KR 101244573 B1 KR101244573 B1 KR 101244573B1 KR 1020077027899 A KR1020077027899 A KR 1020077027899A KR 20077027899 A KR20077027899 A KR 20077027899A KR 101244573 B1 KR101244573 B1 KR 101244573B1
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capacitance
image sensor
pixels
providing
pixel
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KR20080011679A (ko
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로버트 마이클 가이다쉬
라비 엠루시윤자야
웨이즈 수
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020077027899A 2005-06-01 2006-05-26 이미지 센서와 그 제조 방법 및 이미지 센서를 포함하는디지털 카메라 Active KR101244573B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68616005P 2005-06-01 2005-06-01
US60/686,160 2005-06-01
US11/398,514 2006-04-05
US11/398,514 US7238926B2 (en) 2005-06-01 2006-04-05 Shared amplifier pixel with matched coupling capacitances
PCT/US2006/020587 WO2006130519A2 (en) 2005-06-01 2006-05-26 Shared amplifier pixel with matched coupling capacitances

Publications (2)

Publication Number Publication Date
KR20080011679A KR20080011679A (ko) 2008-02-05
KR101244573B1 true KR101244573B1 (ko) 2013-03-25

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KR1020077027899A Active KR101244573B1 (ko) 2005-06-01 2006-05-26 이미지 센서와 그 제조 방법 및 이미지 센서를 포함하는디지털 카메라

Country Status (7)

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US (1) US7238926B2 (enExample)
EP (1) EP1900192A2 (enExample)
JP (1) JP2008546201A (enExample)
KR (1) KR101244573B1 (enExample)
CN (1) CN101189863B (enExample)
TW (1) TW200711119A (enExample)
WO (1) WO2006130519A2 (enExample)

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US7443437B2 (en) 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
US11282891B2 (en) 2003-11-26 2022-03-22 Samsung Electronics Co., Ltd. Image sensor with a gated storage node linked to transfer gate
US7542085B2 (en) * 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
US7705900B2 (en) * 2005-06-01 2010-04-27 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain
JP2008205638A (ja) * 2007-02-16 2008-09-04 Texas Instr Japan Ltd 固体撮像装置及びその動作方法
US8159585B2 (en) * 2007-05-01 2012-04-17 Omnivision Technologies, Inc. Image sensor pixel with gain control
US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
JP5187550B2 (ja) * 2007-08-21 2013-04-24 ソニー株式会社 撮像装置
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
JP4952601B2 (ja) * 2008-02-04 2012-06-13 日本テキサス・インスツルメンツ株式会社 固体撮像装置
US8233070B2 (en) * 2009-03-27 2012-07-31 International Business Machines Corporation Variable dynamic range pixel sensor cell, design structure and method
JP5521682B2 (ja) 2010-02-26 2014-06-18 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
JP2013125861A (ja) * 2011-12-14 2013-06-24 Sony Corp 固体撮像素子および電子機器
CN104113714B (zh) * 2014-07-31 2017-12-29 深圳大学 Cmos有源像素结构及图像传感器
US10190329B2 (en) 2015-03-18 2019-01-29 Jacob Kobelt Methods, systems, and assemblies for covering an end of a post
KR102356706B1 (ko) 2015-07-07 2022-01-27 삼성전자주식회사 넓은 다이나믹 레인지를 갖는 이미지 센서, 이미지 센서의 픽셀 회로 및 이미지 센서의 동작방법
JP2017085065A (ja) * 2015-10-30 2017-05-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10103190B2 (en) * 2016-05-13 2018-10-16 Semiconductor Components Industries, Llc Imaging sensor having floating region of imaging device on one substrate electrically coupled to another floating region formed on a second substrate
US20180301484A1 (en) * 2017-04-17 2018-10-18 Semiconductor Components Industries, Llc Image sensors with high dynamic range and autofocusing hexagonal pixels
KR20200118723A (ko) * 2019-04-08 2020-10-16 삼성전자주식회사 픽셀 그룹들을 포함하는 이미지 센서 및 이를 포함하는 전자 장치

Citations (2)

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JP2002050752A (ja) * 2000-08-01 2002-02-15 Canon Inc 光電変換装置およびこれを用いた撮像システム
WO2005011264A2 (en) * 2003-07-15 2005-02-03 Eastman Kodak Company Image sensor with charge binning

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JP4721380B2 (ja) * 2000-04-14 2011-07-13 キヤノン株式会社 固体撮像装置および撮像システム
US7382408B2 (en) * 2002-07-18 2008-06-03 Micron Technology, Inc. Varying capacitance that receives signals from sensing elements
CN1203663C (zh) * 2003-06-03 2005-05-25 北京大学 一种快闪电荷放大结构焦平面读出电路及其复位读出方法
JP4635191B2 (ja) * 2003-10-21 2011-02-16 国立大学法人静岡大学 超解像画素電極の配置構造及び信号処理方法
US7542085B2 (en) * 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
JP4553612B2 (ja) * 2004-03-18 2010-09-29 ルネサスエレクトロニクス株式会社 撮像素子およびそれを備えた撮像装置
US7616231B2 (en) * 2005-01-06 2009-11-10 Goodrich Corporation CMOS active pixel sensor with improved dynamic range and method of operation for object motion detection
JP4518996B2 (ja) * 2005-04-22 2010-08-04 シャープ株式会社 固体撮像装置の製造方法および電子情報装置

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2002050752A (ja) * 2000-08-01 2002-02-15 Canon Inc 光電変換装置およびこれを用いた撮像システム
WO2005011264A2 (en) * 2003-07-15 2005-02-03 Eastman Kodak Company Image sensor with charge binning

Also Published As

Publication number Publication date
JP2008546201A (ja) 2008-12-18
US20060273240A1 (en) 2006-12-07
TW200711119A (en) 2007-03-16
EP1900192A2 (en) 2008-03-19
KR20080011679A (ko) 2008-02-05
WO2006130519A2 (en) 2006-12-07
CN101189863B (zh) 2010-09-29
CN101189863A (zh) 2008-05-28
US7238926B2 (en) 2007-07-03
WO2006130519A3 (en) 2007-02-01

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