CN101189863B - 耦合电容匹配的共享放大器像素 - Google Patents
耦合电容匹配的共享放大器像素 Download PDFInfo
- Publication number
- CN101189863B CN101189863B CN2006800194212A CN200680019421A CN101189863B CN 101189863 B CN101189863 B CN 101189863B CN 2006800194212 A CN2006800194212 A CN 2006800194212A CN 200680019421 A CN200680019421 A CN 200680019421A CN 101189863 B CN101189863 B CN 101189863B
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- CN
- China
- Prior art keywords
- charge
- pixels
- transmission gate
- photodetector
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000008878 coupling Effects 0.000 title description 14
- 238000010168 coupling process Methods 0.000 title description 14
- 238000005859 coupling reaction Methods 0.000 title description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 13
- 238000007667 floating Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 102100040678 Programmed cell death protein 1 Human genes 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 101710089372 Programmed cell death protein 1 Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68616005P | 2005-06-01 | 2005-06-01 | |
US60/686,160 | 2005-06-01 | ||
US11/398,514 US7238926B2 (en) | 2005-06-01 | 2006-04-05 | Shared amplifier pixel with matched coupling capacitances |
US11/398,514 | 2006-04-05 | ||
PCT/US2006/020587 WO2006130519A2 (en) | 2005-06-01 | 2006-05-26 | Shared amplifier pixel with matched coupling capacitances |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101189863A CN101189863A (zh) | 2008-05-28 |
CN101189863B true CN101189863B (zh) | 2010-09-29 |
Family
ID=37165187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800194212A Active CN101189863B (zh) | 2005-06-01 | 2006-05-26 | 耦合电容匹配的共享放大器像素 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7238926B2 (zh) |
EP (1) | EP1900192A2 (zh) |
JP (1) | JP2008546201A (zh) |
KR (1) | KR101244573B1 (zh) |
CN (1) | CN101189863B (zh) |
TW (1) | TW200711119A (zh) |
WO (1) | WO2006130519A2 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7443437B2 (en) | 2003-11-26 | 2008-10-28 | Micron Technology, Inc. | Image sensor with a gated storage node linked to transfer gate |
US7542085B2 (en) * | 2003-11-26 | 2009-06-02 | Aptina Imaging Corporation | Image sensor with a capacitive storage node linked to transfer gate |
US11282891B2 (en) | 2003-11-26 | 2022-03-22 | Samsung Electronics Co., Ltd. | Image sensor with a gated storage node linked to transfer gate |
US7705900B2 (en) * | 2005-06-01 | 2010-04-27 | Eastman Kodak Company | CMOS image sensor pixel with selectable binning and conversion gain |
JP2008205638A (ja) * | 2007-02-16 | 2008-09-04 | Texas Instr Japan Ltd | 固体撮像装置及びその動作方法 |
US8159585B2 (en) * | 2007-05-01 | 2012-04-17 | Omnivision Technologies, Inc. | Image sensor pixel with gain control |
US7924333B2 (en) * | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
JP5187550B2 (ja) * | 2007-08-21 | 2013-04-24 | ソニー株式会社 | 撮像装置 |
US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
JP4952601B2 (ja) * | 2008-02-04 | 2012-06-13 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
US8233070B2 (en) * | 2009-03-27 | 2012-07-31 | International Business Machines Corporation | Variable dynamic range pixel sensor cell, design structure and method |
JP5521682B2 (ja) * | 2010-02-26 | 2014-06-18 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器 |
JP2013125861A (ja) * | 2011-12-14 | 2013-06-24 | Sony Corp | 固体撮像素子および電子機器 |
CN104113714B (zh) * | 2014-07-31 | 2017-12-29 | 深圳大学 | Cmos有源像素结构及图像传感器 |
US10190329B2 (en) | 2015-03-18 | 2019-01-29 | Jacob Kobelt | Methods, systems, and assemblies for covering an end of a post |
KR102356706B1 (ko) | 2015-07-07 | 2022-01-27 | 삼성전자주식회사 | 넓은 다이나믹 레인지를 갖는 이미지 센서, 이미지 센서의 픽셀 회로 및 이미지 센서의 동작방법 |
JP2017085065A (ja) * | 2015-10-30 | 2017-05-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10103190B2 (en) * | 2016-05-13 | 2018-10-16 | Semiconductor Components Industries, Llc | Imaging sensor having floating region of imaging device on one substrate electrically coupled to another floating region formed on a second substrate |
US20180301484A1 (en) * | 2017-04-17 | 2018-10-18 | Semiconductor Components Industries, Llc | Image sensors with high dynamic range and autofocusing hexagonal pixels |
KR20200118723A (ko) * | 2019-04-08 | 2020-10-16 | 삼성전자주식회사 | 픽셀 그룹들을 포함하는 이미지 센서 및 이를 포함하는 전자 장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1477859A (zh) * | 2003-06-03 | 2004-02-25 | 北京大学 | 一种快闪电荷放大结构焦平面读出电路及其复位读出方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4721380B2 (ja) * | 2000-04-14 | 2011-07-13 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP2002050752A (ja) * | 2000-08-01 | 2002-02-15 | Canon Inc | 光電変換装置およびこれを用いた撮像システム |
US7382408B2 (en) | 2002-07-18 | 2008-06-03 | Micron Technology, Inc. | Varying capacitance that receives signals from sensing elements |
US7859581B2 (en) * | 2003-07-15 | 2010-12-28 | Eastman Kodak Company | Image sensor with charge binning and dual channel readout |
JP4635191B2 (ja) * | 2003-10-21 | 2011-02-16 | 国立大学法人静岡大学 | 超解像画素電極の配置構造及び信号処理方法 |
US7542085B2 (en) | 2003-11-26 | 2009-06-02 | Aptina Imaging Corporation | Image sensor with a capacitive storage node linked to transfer gate |
JP4553612B2 (ja) * | 2004-03-18 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 撮像素子およびそれを備えた撮像装置 |
US7616231B2 (en) * | 2005-01-06 | 2009-11-10 | Goodrich Corporation | CMOS active pixel sensor with improved dynamic range and method of operation for object motion detection |
JP4518996B2 (ja) * | 2005-04-22 | 2010-08-04 | シャープ株式会社 | 固体撮像装置の製造方法および電子情報装置 |
-
2006
- 2006-04-05 US US11/398,514 patent/US7238926B2/en active Active
- 2006-05-26 KR KR1020077027899A patent/KR101244573B1/ko active IP Right Grant
- 2006-05-26 CN CN2006800194212A patent/CN101189863B/zh active Active
- 2006-05-26 EP EP06760460A patent/EP1900192A2/en not_active Withdrawn
- 2006-05-26 WO PCT/US2006/020587 patent/WO2006130519A2/en active Application Filing
- 2006-05-26 JP JP2008514729A patent/JP2008546201A/ja active Pending
- 2006-05-30 TW TW095119082A patent/TW200711119A/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1477859A (zh) * | 2003-06-03 | 2004-02-25 | 北京大学 | 一种快闪电荷放大结构焦平面读出电路及其复位读出方法 |
Non-Patent Citations (2)
Title |
---|
刘成康.CMOS读出电路中的噪声及抑制.半导体光电23 3.2002,23(3),170-173页. |
刘成康.CMOS读出电路中的噪声及抑制.半导体光电23 3.2002,23(3),170-173页. * |
Also Published As
Publication number | Publication date |
---|---|
JP2008546201A (ja) | 2008-12-18 |
KR101244573B1 (ko) | 2013-03-25 |
KR20080011679A (ko) | 2008-02-05 |
WO2006130519A2 (en) | 2006-12-07 |
WO2006130519A3 (en) | 2007-02-01 |
EP1900192A2 (en) | 2008-03-19 |
TW200711119A (en) | 2007-03-16 |
CN101189863A (zh) | 2008-05-28 |
US7238926B2 (en) | 2007-07-03 |
US20060273240A1 (en) | 2006-12-07 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Owner name: FULL VISION TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK Effective date: 20110706 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: NEW YORK STATE, THE USA TO: CALIFORNIA STATE, THE USA |
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Effective date of registration: 20110706 Address after: California, USA Patentee after: Full Vision Technology Co., Ltd. Address before: American New York Patentee before: Eastman Kodak Co. |
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CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: OmniVision Technologies, Inc. Address before: California, USA Patentee before: Full Vision Technology Co., Ltd. |
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CP01 | Change in the name or title of a patent holder |