KR101233131B1 - 발광 장치 및 전자 장치 - Google Patents

발광 장치 및 전자 장치 Download PDF

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Publication number
KR101233131B1
KR101233131B1 KR1020127000011A KR20127000011A KR101233131B1 KR 101233131 B1 KR101233131 B1 KR 101233131B1 KR 1020127000011 A KR1020127000011 A KR 1020127000011A KR 20127000011 A KR20127000011 A KR 20127000011A KR 101233131 B1 KR101233131 B1 KR 101233131B1
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layer
oxide
light emitting
hole
formed over
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20120014078A (ko
Inventor
다이즈케 구마키
사토시 세오
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020127000011A 2004-09-30 2005-09-27 발광 장치 및 전자 장치 Expired - Fee Related KR101233131B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-285777 2004-09-30
JP2004285777 2004-09-30
PCT/JP2005/018243 WO2006035973A1 (en) 2004-09-30 2005-09-27 Light-emitting element and light-emitting device

Related Parent Applications (1)

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KR1020077009887A Division KR101187202B1 (ko) 2004-09-30 2005-09-27 발광 소자, 발광 장치, 및 전자 장치

Publications (2)

Publication Number Publication Date
KR20120014078A KR20120014078A (ko) 2012-02-15
KR101233131B1 true KR101233131B1 (ko) 2013-02-15

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KR1020127000011A Expired - Fee Related KR101233131B1 (ko) 2004-09-30 2005-09-27 발광 장치 및 전자 장치
KR1020077009887A Expired - Fee Related KR101187202B1 (ko) 2004-09-30 2005-09-27 발광 소자, 발광 장치, 및 전자 장치

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Country Status (5)

Country Link
US (4) US7964864B2 (enExample)
JP (1) JP4777032B2 (enExample)
KR (2) KR101233131B1 (enExample)
CN (1) CN101032040B (enExample)
WO (1) WO2006035973A1 (enExample)

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WO2006035973A1 (en) 2004-09-30 2006-04-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
KR101197690B1 (ko) * 2004-09-30 2012-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자 및 그 발광 소자를 이용하는 표시장치
KR101272098B1 (ko) * 2005-02-08 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자, 발광장치 및 전자기기
US8659008B2 (en) 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
DE102007023876A1 (de) * 2007-03-02 2008-09-04 Osram Opto Semiconductors Gmbh Elektrisches organisches Bauelement und Verfahren zu seiner Herstellung
US8384283B2 (en) 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
KR100922759B1 (ko) * 2008-02-26 2009-10-21 삼성모바일디스플레이주식회사 유기 발광 소자
KR20090131550A (ko) * 2008-06-18 2009-12-29 삼성모바일디스플레이주식회사 유기 발광 소자
JP2010103500A (ja) * 2008-09-26 2010-05-06 Toppan Printing Co Ltd 有機電界発光素子及びその製造方法、画像表示装置、照明装置
JP5759669B2 (ja) 2008-12-01 2015-08-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
TWI486097B (zh) * 2008-12-01 2015-05-21 Semiconductor Energy Lab 發光元件、發光裝置、照明裝置、及電子裝置
KR101890569B1 (ko) 2009-05-29 2018-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자기기 및 조명 장치
US8389979B2 (en) * 2009-05-29 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
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CN102201541B (zh) * 2010-03-23 2015-11-25 株式会社半导体能源研究所 发光元件、发光装置、电子设备及照明装置
TWI506121B (zh) 2010-03-31 2015-11-01 Semiconductor Energy Lab 發光元件，發光裝置，電子裝置以及照明裝置
JP5801579B2 (ja) 2010-03-31 2015-10-28 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置
WO2011162105A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display, and electronic device
WO2012086662A1 (en) * 2010-12-24 2012-06-28 Semiconductor Energy Laboratory Co., Ltd. Lighting device
US8552440B2 (en) * 2010-12-24 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Lighting device
KR20130108026A (ko) 2012-03-23 2013-10-02 주식회사 엘지화학 유기발광소자
TWI577238B (zh) * 2012-04-25 2017-04-01 群康科技(深圳)有限公司 有機發光二極體及包含其之顯示裝置
KR101978304B1 (ko) * 2012-11-15 2019-05-14 삼성전자주식회사 자체발광 디스플레이 패널 및 이를 가지는 디스플레이장치
US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
CN103840047B (zh) * 2014-02-20 2016-07-06 浙江大学 一种以胶体NiO纳米晶薄膜为空穴传输层的光电器件及其制备方法
CN105161626B (zh) * 2015-06-23 2017-05-24 广东茵坦斯能源科技有限公司 一种掺杂的纳米锡化物有机发光器件
CN106098956A (zh) * 2016-07-14 2016-11-09 Tcl集团股份有限公司 一种qled及其制备方法
CN115277894B (zh) * 2022-06-21 2024-11-22 维沃移动通信有限公司 电子设备、插入检测方法及可读存储介质

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JP2000340365A (ja) 1999-05-25 2000-12-08 Matsushita Electric Ind Co Ltd 有機電界発光素子
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Publication number Priority date Publication date Assignee Title
JPH03210791A (ja) * 1990-01-12 1991-09-13 Hitachi Ltd 有機薄膜ｅｌ素子
JP2000340365A (ja) 1999-05-25 2000-12-08 Matsushita Electric Ind Co Ltd 有機電界発光素子
JP2003272855A (ja) 2002-03-18 2003-09-26 Fuji Electric Co Ltd 有機ｅｌ素子および有機ｅｌパネル
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Also Published As

Publication number Publication date
CN101032040B (zh) 2012-05-30
US20110233597A1 (en) 2011-09-29
US20180277789A1 (en) 2018-09-27
CN101032040A (zh) 2007-09-05
WO2006035973A1 (en) 2006-04-06
US10497894B2 (en) 2019-12-03
KR20070072564A (ko) 2007-07-04
US7964864B2 (en) 2011-06-21
JP4777032B2 (ja) 2011-09-21
US20150053962A1 (en) 2015-02-26
JP2006128100A (ja) 2006-05-18
US20070040161A1 (en) 2007-02-22
KR20120014078A (ko) 2012-02-15
KR101187202B1 (ko) 2012-10-02
US8878159B2 (en) 2014-11-04

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