KR101201698B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101201698B1
KR101201698B1 KR1020117025808A KR20117025808A KR101201698B1 KR 101201698 B1 KR101201698 B1 KR 101201698B1 KR 1020117025808 A KR1020117025808 A KR 1020117025808A KR 20117025808 A KR20117025808 A KR 20117025808A KR 101201698 B1 KR101201698 B1 KR 101201698B1
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KR
South Korea
Prior art keywords
electrodes
pair
memory element
voltage
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020117025808A
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English (en)
Korean (ko)
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KR20110127286A (ko
Inventor
요지 노무라
히로코 아베
유지 이와키
？페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20110127286A publication Critical patent/KR20110127286A/ko
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Publication of KR101201698B1 publication Critical patent/KR101201698B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0059—Security or protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Security & Cryptography (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Read Only Memory (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020117025808A 2004-10-18 2005-10-12 반도체 장치 Expired - Fee Related KR101201698B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-303595 2004-10-18
JP2004303595 2004-10-18
PCT/JP2005/019156 WO2006043573A1 (en) 2004-10-18 2005-10-12 Semiconductor device and driving method of the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077011426A Division KR101164437B1 (ko) 2004-10-18 2005-10-12 반도체 장치 및 그것의 구동 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127005780A Division KR20140015128A (ko) 2004-10-18 2005-10-12 반도체 장치

Publications (2)

Publication Number Publication Date
KR20110127286A KR20110127286A (ko) 2011-11-24
KR101201698B1 true KR101201698B1 (ko) 2012-11-15

Family

ID=36202988

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020117025808A Expired - Fee Related KR101201698B1 (ko) 2004-10-18 2005-10-12 반도체 장치
KR1020077011426A Expired - Fee Related KR101164437B1 (ko) 2004-10-18 2005-10-12 반도체 장치 및 그것의 구동 방법
KR1020127005780A Ceased KR20140015128A (ko) 2004-10-18 2005-10-12 반도체 장치

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020077011426A Expired - Fee Related KR101164437B1 (ko) 2004-10-18 2005-10-12 반도체 장치 및 그것의 구동 방법
KR1020127005780A Ceased KR20140015128A (ko) 2004-10-18 2005-10-12 반도체 장치

Country Status (7)

Country Link
US (3) US7499305B2 (enExample)
EP (2) EP1812893A4 (enExample)
JP (1) JP5019737B2 (enExample)
KR (3) KR101201698B1 (enExample)
CN (2) CN101676931B (enExample)
TW (2) TWI472071B (enExample)
WO (1) WO2006043573A1 (enExample)

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