JP5019737B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5019737B2
JP5019737B2 JP2005302175A JP2005302175A JP5019737B2 JP 5019737 B2 JP5019737 B2 JP 5019737B2 JP 2005302175 A JP2005302175 A JP 2005302175A JP 2005302175 A JP2005302175 A JP 2005302175A JP 5019737 B2 JP5019737 B2 JP 5019737B2
Authority
JP
Japan
Prior art keywords
memory element
conductive layer
organic
organic compound
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005302175A
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English (en)
Japanese (ja)
Other versions
JP2006148080A (ja
JP2006148080A5 (enExample
Inventor
亮二 野村
寛子 安部
裕司 岩城
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005302175A priority Critical patent/JP5019737B2/ja
Publication of JP2006148080A publication Critical patent/JP2006148080A/ja
Publication of JP2006148080A5 publication Critical patent/JP2006148080A5/ja
Application granted granted Critical
Publication of JP5019737B2 publication Critical patent/JP5019737B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0059—Security or protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Security & Cryptography (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Read Only Memory (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005302175A 2004-10-18 2005-10-17 半導体装置 Expired - Fee Related JP5019737B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005302175A JP5019737B2 (ja) 2004-10-18 2005-10-17 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004303595 2004-10-18
JP2004303595 2004-10-18
JP2005302175A JP5019737B2 (ja) 2004-10-18 2005-10-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2006148080A JP2006148080A (ja) 2006-06-08
JP2006148080A5 JP2006148080A5 (enExample) 2008-12-18
JP5019737B2 true JP5019737B2 (ja) 2012-09-05

Family

ID=36202988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005302175A Expired - Fee Related JP5019737B2 (ja) 2004-10-18 2005-10-17 半導体装置

Country Status (7)

Country Link
US (3) US7499305B2 (enExample)
EP (2) EP2348460B1 (enExample)
JP (1) JP5019737B2 (enExample)
KR (3) KR20140015128A (enExample)
CN (2) CN100557813C (enExample)
TW (2) TWI446606B (enExample)
WO (1) WO2006043573A1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101258672B1 (ko) 2004-10-22 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2006043687A1 (en) * 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006051996A1 (en) 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006057417A1 (en) * 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8604547B2 (en) * 2005-02-10 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
WO2006101241A1 (en) 2005-03-25 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Memory element, memory device, and semiconductor device
US7926726B2 (en) * 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
WO2006118294A1 (en) * 2005-04-27 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
EP1717862A3 (en) 2005-04-28 2012-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US7700984B2 (en) 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
EP1886261B1 (en) 2005-05-31 2011-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7868320B2 (en) * 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7905397B2 (en) * 2005-06-01 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Data management method and data management system
KR101369864B1 (ko) 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US7684781B2 (en) 2005-11-25 2010-03-23 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
WO2007088795A1 (en) 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of memory element, laser irradiation apparatus, and laser irradiation method
US8580700B2 (en) * 2006-02-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101401209B (zh) * 2006-03-10 2011-05-25 株式会社半导体能源研究所 存储元件以及半导体器件
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US7923719B2 (en) 2006-04-28 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
US7551471B2 (en) * 2006-04-28 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
JP5230119B2 (ja) * 2006-04-28 2013-07-10 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7719001B2 (en) * 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
EP1883109B1 (en) 2006-07-28 2013-05-15 Semiconductor Energy Laboratory Co., Ltd. Memory element and method of manufacturing thereof
EP2064732A4 (en) * 2006-10-19 2012-07-25 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US7988057B2 (en) * 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
EP2084745A4 (en) * 2006-11-29 2012-10-24 Semiconductor Energy Lab DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
US7875881B2 (en) * 2007-04-03 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
DE102007030308A1 (de) * 2007-06-29 2009-01-02 Printed Systems Gmbh Verfahren zum Herstellen einer Speicherstruktur
EP2107571B1 (en) 2008-04-03 2012-04-25 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR20120081231A (ko) * 2008-05-16 2012-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자, 및 조명장치
JP4727702B2 (ja) * 2008-09-11 2011-07-20 株式会社 日立ディスプレイズ 液晶表示装置、及びその製造方法
US8593255B2 (en) * 2009-04-24 2013-11-26 Nokia Corporation Method and apparatus for providing user interaction via transponders
GB2470006B (en) * 2009-05-05 2012-05-23 Cambridge Display Tech Ltd Device and method of forming a device
US8469280B2 (en) 2009-10-22 2013-06-25 Intellipaper, Llc Programming devices and programming methods
US8469271B2 (en) 2009-10-22 2013-06-25 Intellipaper, Llc Electronic storage devices, programming methods, and device manufacturing methods
US8523071B2 (en) 2009-10-22 2013-09-03 Intellipaper, Llc Electronic assemblies and methods of forming electronic assemblies
WO2011127183A2 (en) * 2010-04-07 2011-10-13 Intellipaper , Llc Memomy programming methods and memory programming devices
KR101290003B1 (ko) * 2011-08-31 2013-07-31 한국과학기술원 플렉서블 메모리 소자 제조방법 및 이에 의하여 제조된 플렉서블 메모리 소자
US8947903B2 (en) * 2011-07-07 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Memory chip with more than one type of memory cell
CN102761793B (zh) * 2012-06-12 2014-10-29 烽火通信科技股份有限公司 一种矩阵化eID总线电路
RU2702271C2 (ru) * 2015-06-10 2019-10-07 Тосиба Мемори Корпорейшн Запоминающее устройство с изменением сопротивления
KR101720868B1 (ko) * 2015-07-18 2017-03-28 국민대학교산학협력단 저항 변화를 이용한 비휘발성 메모리 소자
KR101720867B1 (ko) * 2015-07-17 2017-03-28 국민대학교산학협력단 저항 변화를 이용한 비휘발성 메모리 소자
CZ2016452A3 (cs) * 2016-07-25 2018-01-24 Vysoké Učení Technické V Brně Radiofrekvenční identifikátor laditelný dielektrickými vložkami
CN107884732A (zh) * 2016-09-30 2018-04-06 西门子(深圳)磁共振有限公司 磁共振成像设备、射频线圈及其制造方法
CN109307964B (zh) * 2017-07-28 2021-09-10 京东方科技集团股份有限公司 断线修复方法、基板和显示装置
CN110632668B (zh) * 2019-10-14 2024-05-17 厦门顶尖电子有限公司 一种电子价签的定位方法、电子价签组件及系统

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833894A (en) * 1973-06-20 1974-09-03 Ibm Organic memory device
JPH02239664A (ja) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd 電気的記憶装置
US5375250A (en) * 1992-07-13 1994-12-20 Van Den Heuvel; Raymond C. Method of intelligent computing and neural-like processing of time and space functions
US5528222A (en) * 1994-09-09 1996-06-18 International Business Machines Corporation Radio frequency circuit and memory in thin flexible package
US6340588B1 (en) 1995-04-25 2002-01-22 Discovery Partners International, Inc. Matrices with memories
DE69723625T2 (de) 1996-02-16 2004-04-22 Koninklijke Philips Electronics N.V. Einmal beschreibbares, mehrmals lesbares elektrisches speicherelement aus konjugiertem polymer oder oligomer
TW317643B (enExample) * 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US6337492B1 (en) * 1997-07-11 2002-01-08 Emagin Corporation Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
US6396208B1 (en) * 1998-01-27 2002-05-28 Nec Corporation Organic electroluminescent device and its manufacturing process
US6812182B2 (en) * 1998-10-23 2004-11-02 Albemarle Corporation Compositions formed from hydroxyaluminoxane and their use as catalyst components
EP1194960B1 (en) 1999-07-02 2010-09-15 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
JP3622598B2 (ja) * 1999-10-25 2005-02-23 セイコーエプソン株式会社 不揮発性メモリ素子の製造方法
US6478229B1 (en) * 2000-03-14 2002-11-12 Harvey Epstein Packaging tape with radio frequency identification technology
JP2001345431A (ja) 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP3843703B2 (ja) * 2000-06-13 2006-11-08 富士ゼロックス株式会社 光書き込み型記録表示装置
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
US6950331B2 (en) 2000-10-31 2005-09-27 The Regents Of The University Of California Organic bistable device and organic memory cells
JP4329287B2 (ja) 2000-12-27 2009-09-09 三菱マテリアル株式会社 Ｐｌｚｔ又はｐｚｔ強誘電体薄膜、その形成用組成物及び形成方法
US6552409B2 (en) 2001-06-05 2003-04-22 Hewlett-Packard Development Company, Lp Techniques for addressing cross-point diode memory arrays
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
JP2003007982A (ja) * 2001-06-22 2003-01-10 Nec Corp 磁気記憶装置及び磁気記憶装置の設計方法
US6872472B2 (en) * 2002-02-15 2005-03-29 Eastman Kodak Company Providing an organic electroluminescent device having stacked electroluminescent units
JP2003257506A (ja) 2002-02-27 2003-09-12 Fuji Photo Film Co Ltd 電解質組成物、光電変換素子及び光電池
US6683322B2 (en) 2002-03-01 2004-01-27 Hewlett-Packard Development Company, L.P. Flexible hybrid memory element
US7204425B2 (en) * 2002-03-18 2007-04-17 Precision Dynamics Corporation Enhanced identification appliance
JP3940014B2 (ja) 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
KR100437458B1 (ko) * 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
JP4539007B2 (ja) * 2002-05-09 2010-09-08 日本電気株式会社 半導体記憶装置
US6813182B2 (en) 2002-05-31 2004-11-02 Hewlett-Packard Development Company, L.P. Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
US6828685B2 (en) * 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
JP2004047791A (ja) 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
JP2004128471A (ja) * 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6870183B2 (en) * 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating
US6847047B2 (en) * 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
US6963307B2 (en) * 2002-11-19 2005-11-08 Farrokh Mohamadi Inductively-coupled antenna array
US7358848B2 (en) * 2002-11-19 2008-04-15 Farrokh Mohamadi Wireless remote sensor
US6944052B2 (en) * 2002-11-26 2005-09-13 Freescale Semiconductor, Inc. Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics
US7220985B2 (en) * 2002-12-09 2007-05-22 Spansion, Llc Self aligned memory element and wordline
JP4089544B2 (ja) * 2002-12-11 2008-05-28 ソニー株式会社 表示装置及び表示装置の製造方法
EP1437683B1 (en) 2002-12-27 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. IC card and booking account system using the IC card
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法
US6873219B2 (en) * 2003-01-28 2005-03-29 Hewlett-Packard Development Company, L.P. Printed circuit board noise attenuation using lossy conductors
US7973313B2 (en) * 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP4496712B2 (ja) 2003-03-31 2010-07-07 セイコーエプソン株式会社 燃料電池
US6977389B2 (en) * 2003-06-02 2005-12-20 Advanced Micro Devices, Inc. Planar polymer memory device
TWI227031B (en) * 2003-06-20 2005-01-21 Au Optronics Corp A capacitor structure
US6803267B1 (en) * 2003-07-07 2004-10-12 Advanced Micro Devices, Inc. Silicon containing material for patterning polymeric memory element
US7050326B2 (en) * 2003-10-07 2006-05-23 Hewlett-Packard Development Company, L.P. Magnetic memory device with current carrying reference layer
DE10355561A1 (de) * 2003-11-28 2005-06-30 Infineon Technologies Ag Halbleiteranordnung mit nichtflüchtigen Speichern
JP2005183619A (ja) * 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
US7630233B2 (en) 2004-04-02 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
KR101258672B1 (ko) 2004-10-22 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2006043687A1 (en) 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006057417A1 (en) * 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8188461B2 (en) * 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device

Also Published As

Publication number Publication date
KR20140015128A (ko) 2014-02-06
US20110227137A1 (en) 2011-09-22
WO2006043573A1 (en) 2006-04-27
US7499305B2 (en) 2009-03-03
EP1812893A1 (en) 2007-08-01
TWI446606B (zh) 2014-07-21
KR101164437B1 (ko) 2012-07-13
CN101676931A (zh) 2010-03-24
JP2006148080A (ja) 2006-06-08
TW200633281A (en) 2006-09-16
US8223531B2 (en) 2012-07-17
CN101044623A (zh) 2007-09-26
EP2348460B1 (en) 2014-04-23
KR20070084394A (ko) 2007-08-24
US8089799B2 (en) 2012-01-03
EP1812893A4 (en) 2008-12-10
TW200908406A (en) 2009-02-16
TWI472071B (zh) 2015-02-01
US20070153565A1 (en) 2007-07-05
EP2348460A1 (en) 2011-07-27
CN100557813C (zh) 2009-11-04
KR101201698B1 (ko) 2012-11-15
CN101676931B (zh) 2012-06-27
US20090121874A1 (en) 2009-05-14
KR20110127286A (ko) 2011-11-24

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