KR101200804B1 - 질화 갈륨계 화합물 반도체층의 형성방법, 이설방법, 및 질화 갈륨계 화합물 반도체층이 접합된 기판 구조체 - Google Patents

질화 갈륨계 화합물 반도체층의 형성방법, 이설방법, 및 질화 갈륨계 화합물 반도체층이 접합된 기판 구조체 Download PDF

Info

Publication number
KR101200804B1
KR101200804B1 KR1020090104802A KR20090104802A KR101200804B1 KR 101200804 B1 KR101200804 B1 KR 101200804B1 KR 1020090104802 A KR1020090104802 A KR 1020090104802A KR 20090104802 A KR20090104802 A KR 20090104802A KR 101200804 B1 KR101200804 B1 KR 101200804B1
Authority
KR
South Korea
Prior art keywords
substrate
layer
epitaxial layer
gallium nitride
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090104802A
Other languages
English (en)
Korean (ko)
Other versions
KR20100050409A (ko
Inventor
타카오 요네하라
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20100050409A publication Critical patent/KR20100050409A/ko
Application granted granted Critical
Publication of KR101200804B1 publication Critical patent/KR101200804B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials

Landscapes

  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Device Packages (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020090104802A 2008-11-04 2009-11-02 질화 갈륨계 화합물 반도체층의 형성방법, 이설방법, 및 질화 갈륨계 화합물 반도체층이 접합된 기판 구조체 Expired - Fee Related KR101200804B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008282794A JP5132524B2 (ja) 2008-11-04 2008-11-04 窒化ガリウム系化合物半導体層の移設方法、及び窒化ガリウム系化合物半導体層が接合された基板
JPJP-P-2008-282794 2008-11-04

Publications (2)

Publication Number Publication Date
KR20100050409A KR20100050409A (ko) 2010-05-13
KR101200804B1 true KR101200804B1 (ko) 2012-11-13

Family

ID=41479123

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090104802A Expired - Fee Related KR101200804B1 (ko) 2008-11-04 2009-11-02 질화 갈륨계 화합물 반도체층의 형성방법, 이설방법, 및 질화 갈륨계 화합물 반도체층이 접합된 기판 구조체

Country Status (5)

Country Link
US (1) US8053335B2 (https=)
EP (1) EP2182547A2 (https=)
JP (1) JP5132524B2 (https=)
KR (1) KR101200804B1 (https=)
CN (1) CN101740697B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
US8481411B2 (en) * 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
WO2011152262A1 (ja) 2010-05-31 2011-12-08 日亜化学工業株式会社 発光装置及びその製造方法
KR101702943B1 (ko) * 2010-10-29 2017-02-22 엘지이노텍 주식회사 발광소자의 제조방법
CN102468318B (zh) * 2010-11-04 2014-12-24 上海蓝光科技有限公司 一种高压直流发光二极管芯片结构及其制造方法
US8841207B2 (en) * 2011-04-08 2014-09-23 Lux Material Co., Ltd. Reusable substrates for electronic device fabrication and methods thereof
US9306117B2 (en) 2011-07-25 2016-04-05 Industrial Technology Research Institute Transfer-bonding method for light emitting devices
CN103378236B (zh) * 2012-04-25 2017-04-05 清华大学 具有微构造的外延结构体
US9196606B2 (en) 2013-01-09 2015-11-24 Nthdegree Technologies Worldwide Inc. Bonding transistor wafer to LED wafer to form active LED modules
US9705029B2 (en) * 2013-06-26 2017-07-11 Epistar Corporation Light-emitting device and manufacturing method thereof
KR101574267B1 (ko) 2013-12-23 2015-12-04 주식회사 글로벌식스 반도체 발광소자용 지지 기판 및 이를 이용하는 반도체 발광소자를 제조하는 방법
US9660085B2 (en) * 2013-12-23 2017-05-23 Intel Coporation Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
US10032911B2 (en) 2013-12-23 2018-07-24 Intel Corporation Wide band gap transistor on non-native semiconductor substrate
KR102139681B1 (ko) 2014-01-29 2020-07-30 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 발광소자 어레이 모듈 및 발광소자 어레이 칩들을 제어하는 방법
US9508545B2 (en) 2015-02-09 2016-11-29 Applied Materials, Inc. Selectively lateral growth of silicon oxide thin film
EP3298181A1 (de) * 2015-05-21 2018-03-28 EV Group E. Thallner GmbH Verfahren zur aufbringung einer überwuchsschicht auf eine keimschicht
KR101787435B1 (ko) * 2016-02-29 2017-10-19 피에스아이 주식회사 나노 로드 제조방법
US10797027B2 (en) * 2017-12-05 2020-10-06 Seoul Semiconductor Co., Ltd. Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device
US11749790B2 (en) * 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
WO2020076452A1 (en) 2018-10-10 2020-04-16 Glo Ab Vertical stacks of light emitting diodes and control transistors and method of making thereof
JP7276221B2 (ja) * 2020-03-25 2023-05-18 信越半導体株式会社 接合ウェーハの製造方法及び接合ウェーハ
US11552710B2 (en) * 2020-08-17 2023-01-10 Acacia Communications, Inc. Resistivity engineered substrate for RF common-mode suppression
JP7699925B2 (ja) * 2020-12-18 2025-06-30 キヤノン株式会社 画像形成装置
WO2022210402A1 (ja) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ 表示装置
EP4315398A4 (en) 2021-03-31 2025-03-05 Adeia Semiconductor Bonding Technologies Inc. DIRECT ADHESION AND REMOVING A CARRIER

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060246636A1 (en) * 2003-02-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US20070085093A1 (en) * 2005-09-22 2007-04-19 Akira Ohmae Light-emitting diode and method for manufacturing same, integrated light-emitting diode and method for manufacturing same, method for growing a nitride-based iii-v group compound semiconductor, substrate for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display and electronic instrument, electronic device and method for manufacturing same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2628404B2 (ja) 1990-10-25 1997-07-09 日亜化学工業株式会社 半導体結晶膜の成長方法
US5334277A (en) 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP3510479B2 (ja) * 1998-04-27 2004-03-29 シャープ株式会社 光入出力素子アレイ装置の製造法
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
JP2003077940A (ja) * 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US7498608B2 (en) * 2001-10-29 2009-03-03 Sharp Kabushiki Kaisha Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
CN1242091C (zh) * 2002-12-20 2006-02-15 上海北大蓝光科技有限公司 Mocvd生长氮化物发光二极管结构外延片的方法
JP4056481B2 (ja) * 2003-02-07 2008-03-05 三洋電機株式会社 半導体素子およびその製造方法
US6986693B2 (en) * 2003-03-26 2006-01-17 Lucent Technologies Inc. Group III-nitride layers with patterned surfaces
CN100502018C (zh) * 2004-02-06 2009-06-17 株式会社半导体能源研究所 薄膜集成电路的制造方法和元件基片
JP2006156802A (ja) * 2004-11-30 2006-06-15 Showa Denko Kk Ｉｉｉ族窒化物半導体素子
JP4848638B2 (ja) * 2005-01-13 2011-12-28 ソニー株式会社 半導体素子の形成方法および半導体素子のマウント方法
JP2006222402A (ja) 2005-02-14 2006-08-24 Toshiba Ceramics Co Ltd 窒化ガリウム系化合物半導体および製造方法
JP4910608B2 (ja) * 2006-10-02 2012-04-04 ソニー株式会社 発光ダイオードの製造方法および電子装置の製造方法
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060246636A1 (en) * 2003-02-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US20070085093A1 (en) * 2005-09-22 2007-04-19 Akira Ohmae Light-emitting diode and method for manufacturing same, integrated light-emitting diode and method for manufacturing same, method for growing a nitride-based iii-v group compound semiconductor, substrate for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display and electronic instrument, electronic device and method for manufacturing same

Also Published As

Publication number Publication date
US8053335B2 (en) 2011-11-08
JP2010114112A (ja) 2010-05-20
US20100109019A1 (en) 2010-05-06
JP5132524B2 (ja) 2013-01-30
CN101740697A (zh) 2010-06-16
CN101740697B (zh) 2013-05-01
KR20100050409A (ko) 2010-05-13
EP2182547A2 (en) 2010-05-05

Similar Documents

Publication Publication Date Title
KR101200804B1 (ko) 질화 갈륨계 화합물 반도체층의 형성방법, 이설방법, 및 질화 갈륨계 화합물 반도체층이 접합된 기판 구조체
KR101168881B1 (ko) 기능성 영역의 이설방법, ｌｅｄ 어레이, ｌｅｄ 프린터 헤드, 및 ｌｅｄ 프린터
JP5243256B2 (ja) モノリシックに集積化された半導体材料およびデバイス
KR101182181B1 (ko) 기능성 영역의 이설 방법, ｌｅｄ어레이, ｌｅｄ프린터 헤드 및 ｌｅｄ프린터
US7244628B2 (en) Method for fabricating semiconductor devices
US8420501B2 (en) Transfer method of functional region, LED array, LED printer head, and LED printer
US6239033B1 (en) Manufacturing method of semiconductor device
JP7448994B2 (ja) 垂直共振器型面発光レーザのための共振空洞および分布ブラッグ反射器鏡をエピタキシャル側方過成長領域のウイング上に製作する方法
US8164104B2 (en) Light emitting element array and image forming apparatus
US8034643B2 (en) Method for fabrication of a semiconductor device
CN116783335A (zh) 半导体基板、半导体器件、电子设备
TW201034050A (en) Method for transferring functional regions, LED array, LED printer head, and LED printer
US8779445B2 (en) Stress-alleviation layer for LED structures
EP1526574A2 (en) Semiconductor device, light emitting diode print head and image-forming apparatus using same, and method of manufacturing semiconductor device
CN1781195A (zh) Ⅲ族氮化物器件的制作方法以及由其制作的器件
JP7630180B2 (ja) エピタキシャル側方過成長技法を使用してデバイスを除去するための方法
JP2002246642A (ja) 窒化物系化合物半導体発光素子
US20080224170A1 (en) Semiconductor wafer, light emitting diode print head, image forming apparatus, and method of producing semiconductor device
JP4731949B2 (ja) 半導体装置、ｌｅｄヘッド、及びこれを用いた画像形成装置
EP1905104A1 (en) Laser lift-off led with improved light extraction
KR20060079242A (ko) 반도체 소자 제조 방법
KR20060079243A (ko) 반도체 소자 상에 전도성 금속층의 제조 방법
JP2000114589A (ja) 半導体発光装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20151023

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20161108

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20161108

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000