CN101740697B - 氮化镓系化合物半导体层的形成和转移方法及基板结构 - Google Patents

氮化镓系化合物半导体层的形成和转移方法及基板结构 Download PDF

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Publication number
CN101740697B
CN101740697B CN200910211516XA CN200910211516A CN101740697B CN 101740697 B CN101740697 B CN 101740697B CN 200910211516X A CN200910211516X A CN 200910211516XA CN 200910211516 A CN200910211516 A CN 200910211516A CN 101740697 B CN101740697 B CN 101740697B
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substrate
layer
compound semiconductor
epitaxial layer
gallium nitride
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CN200910211516XA
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CN101740697A (zh
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米原隆夫
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials

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  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Device Packages (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200910211516XA 2008-11-04 2009-11-04 氮化镓系化合物半导体层的形成和转移方法及基板结构 Expired - Fee Related CN101740697B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008282794A JP5132524B2 (ja) 2008-11-04 2008-11-04 窒化ガリウム系化合物半導体層の移設方法、及び窒化ガリウム系化合物半導体層が接合された基板
JP2008-282794 2008-11-04

Publications (2)

Publication Number Publication Date
CN101740697A CN101740697A (zh) 2010-06-16
CN101740697B true CN101740697B (zh) 2013-05-01

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US (1) US8053335B2 (https=)
EP (1) EP2182547A2 (https=)
JP (1) JP5132524B2 (https=)
KR (1) KR101200804B1 (https=)
CN (1) CN101740697B (https=)

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CN103378236B (zh) * 2012-04-25 2017-04-05 清华大学 具有微构造的外延结构体
US9196606B2 (en) 2013-01-09 2015-11-24 Nthdegree Technologies Worldwide Inc. Bonding transistor wafer to LED wafer to form active LED modules
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KR101574267B1 (ko) 2013-12-23 2015-12-04 주식회사 글로벌식스 반도체 발광소자용 지지 기판 및 이를 이용하는 반도체 발광소자를 제조하는 방법
US9660085B2 (en) * 2013-12-23 2017-05-23 Intel Coporation Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
US10032911B2 (en) 2013-12-23 2018-07-24 Intel Corporation Wide band gap transistor on non-native semiconductor substrate
KR102139681B1 (ko) 2014-01-29 2020-07-30 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 발광소자 어레이 모듈 및 발광소자 어레이 칩들을 제어하는 방법
US9508545B2 (en) 2015-02-09 2016-11-29 Applied Materials, Inc. Selectively lateral growth of silicon oxide thin film
EP3298181A1 (de) * 2015-05-21 2018-03-28 EV Group E. Thallner GmbH Verfahren zur aufbringung einer überwuchsschicht auf eine keimschicht
KR101787435B1 (ko) * 2016-02-29 2017-10-19 피에스아이 주식회사 나노 로드 제조방법
US10797027B2 (en) * 2017-12-05 2020-10-06 Seoul Semiconductor Co., Ltd. Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device
US11749790B2 (en) * 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
WO2020076452A1 (en) 2018-10-10 2020-04-16 Glo Ab Vertical stacks of light emitting diodes and control transistors and method of making thereof
JP7276221B2 (ja) * 2020-03-25 2023-05-18 信越半導体株式会社 接合ウェーハの製造方法及び接合ウェーハ
US11552710B2 (en) * 2020-08-17 2023-01-10 Acacia Communications, Inc. Resistivity engineered substrate for RF common-mode suppression
JP7699925B2 (ja) * 2020-12-18 2025-06-30 キヤノン株式会社 画像形成装置
WO2022210402A1 (ja) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ 表示装置
EP4315398A4 (en) 2021-03-31 2025-03-05 Adeia Semiconductor Bonding Technologies Inc. DIRECT ADHESION AND REMOVING A CARRIER

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US8053335B2 (en) 2011-11-08
JP2010114112A (ja) 2010-05-20
US20100109019A1 (en) 2010-05-06
JP5132524B2 (ja) 2013-01-30
CN101740697A (zh) 2010-06-16
KR101200804B1 (ko) 2012-11-13
KR20100050409A (ko) 2010-05-13
EP2182547A2 (en) 2010-05-05

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