KR101193824B1 - 옥심 유도체 및 잠산으로서의 이의 용도 - Google Patents
옥심 유도체 및 잠산으로서의 이의 용도 Download PDFInfo
- Publication number
- KR101193824B1 KR101193824B1 KR1020077003721A KR20077003721A KR101193824B1 KR 101193824 B1 KR101193824 B1 KR 101193824B1 KR 1020077003721 A KR1020077003721 A KR 1020077003721A KR 20077003721 A KR20077003721 A KR 20077003721A KR 101193824 B1 KR101193824 B1 KR 101193824B1
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- alkyl
- substituted
- compound
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 CC1C2OC(C)(C)OC2OC1C1OC(*)(C=C)OC1 Chemical compound CC1C2OC(C)(C)OC2OC1C1OC(*)(C=C)OC1 0.000 description 2
- RZTOWFMDBDPERY-UHFFFAOYSA-N CC(CCC1)OC1=O Chemical compound CC(CCC1)OC1=O RZTOWFMDBDPERY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
- C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
- C07C309/67—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/73—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of non-condensed six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/74—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of six-membered aromatic rings being part of condensed ring systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/75—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/08—Esters of oxyacids of phosphorus
- C07F9/09—Esters of phosphoric acids
- C07F9/095—Compounds containing the structure P(=O)-O-acyl, P(=O)-O-heteroatom, P(=O)-O-CN
- C07F9/097—Compounds containing the structure P(=O)-O-N
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/06—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members
- C07C2603/10—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings
- C07C2603/12—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings only one five-membered ring
- C07C2603/18—Fluorenes; Hydrogenated fluorenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/06—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members
- C07C2603/10—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings
- C07C2603/12—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings only one five-membered ring
- C07C2603/20—Acenaphthenes; Hydrogenated acenaphthenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/60—Ring systems containing bridged rings containing three rings containing at least one ring with less than six members
- C07C2603/66—Ring systems containing bridged rings containing three rings containing at least one ring with less than six members containing five-membered rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Indole Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04103453.9 | 2004-07-20 | ||
| EP04103453 | 2004-07-20 | ||
| PCT/EP2005/053296 WO2006008250A2 (en) | 2004-07-20 | 2005-07-11 | Oxime derivatives and the use therof as latent acids |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070034115A KR20070034115A (ko) | 2007-03-27 |
| KR101193824B1 true KR101193824B1 (ko) | 2012-10-24 |
Family
ID=34929352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077003721A Expired - Fee Related KR101193824B1 (ko) | 2004-07-20 | 2005-07-11 | 옥심 유도체 및 잠산으로서의 이의 용도 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7687220B2 (enExample) |
| EP (1) | EP1769286B1 (enExample) |
| JP (1) | JP2008506749A (enExample) |
| KR (1) | KR101193824B1 (enExample) |
| CN (1) | CN1989455B (enExample) |
| CA (1) | CA2574054A1 (enExample) |
| TW (1) | TWI393999B (enExample) |
| WO (1) | WO2006008250A2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399577B2 (en) * | 2003-02-19 | 2008-07-15 | Ciba Specialty Chemicals Corporation | Halogenated oxime derivatives and the use thereof |
| US7485573B2 (en) * | 2006-02-17 | 2009-02-03 | International Business Machines Corporation | Process of making a semiconductor device using multiple antireflective materials |
| TW200804243A (en) * | 2006-06-20 | 2008-01-16 | Ciba Sc Holding Ag | Oxime sulfonates and the use thereof as latent acids |
| RU2453886C2 (ru) * | 2006-08-24 | 2012-06-20 | Циба Холдинг Инк. | Индикаторы дозы уф-излучения |
| KR101526618B1 (ko) * | 2007-05-11 | 2015-06-05 | 바스프 에스이 | 옥심 에스테르 광개시제 |
| JPWO2009081483A1 (ja) * | 2007-12-25 | 2011-05-06 | 株式会社Adeka | オキシムエステル化合物及び該化合物を含有する光重合開始剤 |
| JP5339028B2 (ja) * | 2008-01-29 | 2013-11-13 | 日産化学工業株式会社 | ベンジルシアニド系化合物、光酸発生剤及びその製造方法 |
| JP5137662B2 (ja) * | 2008-03-31 | 2013-02-06 | 富士フイルム株式会社 | 硬化性組成物、カラーフィルタ及びその製造方法、並びに固体撮像素子 |
| TW201016651A (en) | 2008-07-28 | 2010-05-01 | Sumitomo Chemical Co | Oxime compound and resist composition containing the same |
| US9029062B2 (en) | 2010-06-30 | 2015-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and patterning process |
| JP5776580B2 (ja) * | 2011-02-25 | 2015-09-09 | 信越化学工業株式会社 | ポジ型レジスト材料及びこれを用いたパターン形成方法 |
| US9005877B2 (en) | 2012-05-15 | 2015-04-14 | Tokyo Electron Limited | Method of forming patterns using block copolymers and articles thereof |
| JP6100500B2 (ja) | 2012-10-26 | 2017-03-22 | 富士フイルム株式会社 | 感光性転写材料、パターン形成方法およびエッチング方法 |
| US20140273534A1 (en) | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
| US8980538B2 (en) | 2013-03-14 | 2015-03-17 | Tokyo Electron Limited | Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents |
| US8975009B2 (en) | 2013-03-14 | 2015-03-10 | Tokyo Electron Limited | Track processing to remove organic films in directed self-assembly chemo-epitaxy applications |
| US9147574B2 (en) | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
| US9136110B2 (en) | 2013-03-15 | 2015-09-15 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
| CN103389621B (zh) * | 2013-07-26 | 2016-03-16 | 常州强力先端电子材料有限公司 | 一种磺酸肟酯类光产酸剂 |
| WO2015034690A1 (en) | 2013-09-04 | 2015-03-12 | Tokyo Electron Limited | Uv-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly |
| US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
| KR102396005B1 (ko) * | 2013-10-21 | 2022-05-10 | 닛산 가가쿠 가부시키가이샤 | 광도파로의 제조방법 |
| JP6233271B2 (ja) | 2013-12-27 | 2017-11-22 | Jsr株式会社 | 感光性樹脂組成物およびレジストパターンの製造方法 |
| CN103694134A (zh) * | 2014-01-14 | 2014-04-02 | 黑龙江省科学院石油化学研究院 | 宽温液晶单体化合物中间体烷基双环己基苯乙酮肟及其合成方法 |
| EP3165965B1 (en) * | 2014-07-15 | 2018-10-10 | Tokyo Ohka Kogyo Co., Ltd. | Photosensitive composition and compound |
| US10272426B2 (en) | 2015-04-21 | 2019-04-30 | Jsr Corporation | Method of producing microfluidic device, microfluidic device, and photosensitive resin composition |
| US10095110B2 (en) | 2015-11-26 | 2018-10-09 | Jsr Corporation | Photosensitive resin composition, method for forming resist pattern, and method for producing metallic pattern |
| US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
| US10527935B2 (en) * | 2016-12-31 | 2020-01-07 | Rohm And Haas Electronic Materials Llc | Radiation-sensitive compositions and patterning and metallization processes |
| JP6397948B2 (ja) * | 2017-03-01 | 2018-09-26 | 富士フイルム株式会社 | 感光性転写材料、パターン形成方法およびエッチング方法 |
| CN109651534B (zh) * | 2017-10-12 | 2021-04-27 | 常州强力电子新材料股份有限公司 | 一种多酮肟酯类光引发剂及其制备方法和应用 |
| US20220137507A1 (en) * | 2019-01-31 | 2022-05-05 | Adeka Corporation | Compound, acid generator, composition, cured product, cured product manufacturing method, and pattern coating manufacturing method |
| CN112010788B (zh) * | 2019-05-31 | 2022-10-21 | 常州强力先端电子材料有限公司 | 一种非离子型肟酯类光产酸剂 |
| CN113727971A (zh) * | 2019-09-10 | 2021-11-30 | 株式会社艾迪科 | 化合物、产酸剂、组合物、固化物及图案以及固化物及图案的制造方法 |
| KR20220061909A (ko) * | 2019-09-10 | 2022-05-13 | 가부시키가이샤 아데카 | 화합물, 산 발생제, 조성물, 경화물 및 패턴, 그리고 경화물 및 패턴의 제조 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004507777A (ja) * | 2000-08-25 | 2004-03-11 | シップレーカンパニー エル エル シー | オキシムスルホネートおよびn−オキシイミドスルホネート光感応性酸発生剤およびそれを含むフォトレジスト |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4566901A (en) * | 1982-05-06 | 1986-01-28 | Ciba-Geigy Corporation | Novel oxime ethers, the preparation thereof, compositions containing them and the use thereof |
| US4540598A (en) * | 1983-08-17 | 1985-09-10 | Ciba-Geigy Corporation | Process for curing acid-curable finishes |
| EP0199672B1 (de) | 1985-04-12 | 1988-06-01 | Ciba-Geigy Ag | Oximsulfonate mit reaktiven Gruppen |
| GB8608528D0 (en) | 1986-04-08 | 1986-05-14 | Ciba Geigy Ag | Production of positive images |
| EP0571330B1 (de) | 1992-05-22 | 1999-04-07 | Ciba SC Holding AG | Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit |
| JP3830183B2 (ja) * | 1995-09-29 | 2006-10-04 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
| MY117352A (en) * | 1995-10-31 | 2004-06-30 | Ciba Sc Holding Ag | Oximesulfonic acid esters and the use thereof as latent sulfonic acids. |
| US6042988A (en) * | 1996-12-26 | 2000-03-28 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-amplification-type negative resist composition |
| SG77689A1 (en) * | 1998-06-26 | 2001-01-16 | Ciba Sc Holding Ag | New o-acyloxime photoinitiators |
| KR100591030B1 (ko) * | 1999-03-03 | 2006-06-22 | 시바 스페셜티 케미칼스 홀딩 인크. | 옥심 유도체를 포함하는 광중합성 조성물 |
| NL1014545C2 (nl) * | 1999-03-31 | 2002-02-26 | Ciba Sc Holding Ag | Oxim-derivaten en de toepassing daarvan als latente zuren. |
| SG78412A1 (en) * | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
| TWI272451B (en) * | 2000-09-25 | 2007-02-01 | Ciba Sc Holding Ag | Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition |
| JP2002278054A (ja) * | 2001-03-16 | 2002-09-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| JP4210439B2 (ja) * | 2001-04-05 | 2009-01-21 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
| ATE446322T1 (de) * | 2001-06-11 | 2009-11-15 | Basf Se | Oxim ester photoinitiatoren mit kombinierter struktur |
| GB0114266D0 (en) | 2001-06-12 | 2001-08-01 | Ciba Sc Holding Ag | Laser marking method |
| GB0114265D0 (en) | 2001-06-12 | 2001-08-01 | Ciba Sc Holding Ag | Polymeric material containing a latent acid |
| JP2003182218A (ja) * | 2001-12-13 | 2003-07-03 | Fuji Photo Film Co Ltd | 感熱記録材料 |
| KR20040089607A (ko) | 2002-02-06 | 2004-10-21 | 시바 스페셜티 케미칼스 홀딩 인크. | 설포네이트 유도체 및 잠산으로서의 이의 용도 |
| JP4000469B2 (ja) * | 2002-03-22 | 2007-10-31 | 信越化学工業株式会社 | 化学増幅レジスト材料用の光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法 |
| US7399577B2 (en) | 2003-02-19 | 2008-07-15 | Ciba Specialty Chemicals Corporation | Halogenated oxime derivatives and the use thereof |
-
2005
- 2005-07-11 CA CA002574054A patent/CA2574054A1/en not_active Abandoned
- 2005-07-11 CN CN2005800245296A patent/CN1989455B/zh not_active Expired - Fee Related
- 2005-07-11 KR KR1020077003721A patent/KR101193824B1/ko not_active Expired - Fee Related
- 2005-07-11 WO PCT/EP2005/053296 patent/WO2006008250A2/en not_active Ceased
- 2005-07-11 JP JP2007521939A patent/JP2008506749A/ja active Pending
- 2005-07-11 US US11/632,687 patent/US7687220B2/en not_active Expired - Fee Related
- 2005-07-11 EP EP05774169.6A patent/EP1769286B1/en not_active Expired - Lifetime
- 2005-07-19 TW TW094124335A patent/TWI393999B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004507777A (ja) * | 2000-08-25 | 2004-03-11 | シップレーカンパニー エル エル シー | オキシムスルホネートおよびn−オキシイミドスルホネート光感応性酸発生剤およびそれを含むフォトレジスト |
Also Published As
| Publication number | Publication date |
|---|---|
| US7687220B2 (en) | 2010-03-30 |
| WO2006008250A3 (en) | 2006-04-13 |
| TW200612195A (en) | 2006-04-16 |
| EP1769286B1 (en) | 2015-09-09 |
| JP2008506749A (ja) | 2008-03-06 |
| US20080085458A1 (en) | 2008-04-10 |
| CN1989455A (zh) | 2007-06-27 |
| KR20070034115A (ko) | 2007-03-27 |
| CA2574054A1 (en) | 2006-01-26 |
| EP1769286A2 (en) | 2007-04-04 |
| TWI393999B (zh) | 2013-04-21 |
| CN1989455B (zh) | 2011-12-21 |
| WO2006008250A2 (en) | 2006-01-26 |
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