KR101174937B1 - 엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치 - Google Patents

엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치 Download PDF

Info

Publication number
KR101174937B1
KR101174937B1 KR1020077016574A KR20077016574A KR101174937B1 KR 101174937 B1 KR101174937 B1 KR 101174937B1 KR 1020077016574 A KR1020077016574 A KR 1020077016574A KR 20077016574 A KR20077016574 A KR 20077016574A KR 101174937 B1 KR101174937 B1 KR 101174937B1
Authority
KR
South Korea
Prior art keywords
sacrificial layer
wafer
layer material
depositing
delete delete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020077016574A
Other languages
English (en)
Korean (ko)
Other versions
KR20070095959A (ko
Inventor
윌리엄 지. 맥도날드
스티븐 알. 후퍼
아르빈드 에스. 세일리언
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20070095959A publication Critical patent/KR20070095959A/ko
Application granted granted Critical
Publication of KR101174937B1 publication Critical patent/KR101174937B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020077016574A 2005-01-20 2005-12-14 엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치 Expired - Lifetime KR101174937B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/039,688 US7109055B2 (en) 2005-01-20 2005-01-20 Methods and apparatus having wafer level chip scale package for sensing elements
US11/039,688 2005-01-20

Publications (2)

Publication Number Publication Date
KR20070095959A KR20070095959A (ko) 2007-10-01
KR101174937B1 true KR101174937B1 (ko) 2012-08-17

Family

ID=36684436

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077016574A Expired - Lifetime KR101174937B1 (ko) 2005-01-20 2005-12-14 엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치

Country Status (7)

Country Link
US (1) US7109055B2 (enExample)
EP (1) EP1842224A4 (enExample)
JP (1) JP2008529273A (enExample)
KR (1) KR101174937B1 (enExample)
CN (1) CN101065826A (enExample)
TW (1) TWI392032B (enExample)
WO (1) WO2006078374A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI313501B (en) * 2006-03-22 2009-08-11 Ind Tech Res Inst A process for manufacture plastic package of mems devices and the structure for the same
US7632698B2 (en) * 2006-05-16 2009-12-15 Freescale Semiconductor, Inc. Integrated circuit encapsulation and method therefor
WO2008005547A2 (en) * 2006-07-05 2008-01-10 Microstrain, Inc. Rfid tag packaging system
US8153016B2 (en) 2007-10-03 2012-04-10 Apple Inc. Shaping a cover glass
US8035216B2 (en) * 2008-02-22 2011-10-11 Intel Corporation Integrated circuit package and method of manufacturing same
TWI398934B (zh) * 2008-04-15 2013-06-11 亞德諾公司 晶圓級ｃｓｐ感測器
US8037771B2 (en) * 2009-05-13 2011-10-18 Lsi Corporation Electronic pressure-sensing device
US20110108999A1 (en) * 2009-11-06 2011-05-12 Nalla Ravi K Microelectronic package and method of manufacturing same
US8742561B2 (en) 2009-12-29 2014-06-03 Intel Corporation Recessed and embedded die coreless package
US8901724B2 (en) 2009-12-29 2014-12-02 Intel Corporation Semiconductor package with embedded die and its methods of fabrication
US8535989B2 (en) 2010-04-02 2013-09-17 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
US8319318B2 (en) 2010-04-06 2012-11-27 Intel Corporation Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages
JP5357100B2 (ja) * 2010-04-09 2013-12-04 アルプス電気株式会社 フォースセンサパッケージ及びその製造方法
US8618652B2 (en) 2010-04-16 2013-12-31 Intel Corporation Forming functionalized carrier structures with coreless packages
US9847308B2 (en) 2010-04-28 2017-12-19 Intel Corporation Magnetic intermetallic compound interconnect
US8939347B2 (en) 2010-04-28 2015-01-27 Intel Corporation Magnetic intermetallic compound interconnect
US8313958B2 (en) 2010-05-12 2012-11-20 Intel Corporation Magnetic microelectronic device attachment
US8434668B2 (en) 2010-05-12 2013-05-07 Intel Corporation Magnetic attachment structure
US8609532B2 (en) 2010-05-26 2013-12-17 Intel Corporation Magnetically sintered conductive via
US20120001339A1 (en) 2010-06-30 2012-01-05 Pramod Malatkar Bumpless build-up layer package design with an interposer
US8372666B2 (en) 2010-07-06 2013-02-12 Intel Corporation Misalignment correction for embedded microelectronic die applications
US8754516B2 (en) 2010-08-26 2014-06-17 Intel Corporation Bumpless build-up layer package with pre-stacked microelectronic devices
US8304913B2 (en) 2010-09-24 2012-11-06 Intel Corporation Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby
US8937382B2 (en) 2011-06-27 2015-01-20 Intel Corporation Secondary device integration into coreless microelectronic device packages
US8848380B2 (en) 2011-06-30 2014-09-30 Intel Corporation Bumpless build-up layer package warpage reduction
DE102011083719B4 (de) * 2011-09-29 2022-12-08 Robert Bosch Gmbh Verfahren zur Herstellung einer Zweichipanordnung
AU2013208114B2 (en) * 2012-01-10 2014-10-30 Hzo, Inc. Masks for use in applying protective coatings to electronic assemblies, masked electronic assemblies and associated methods
JP5999302B2 (ja) * 2012-02-09 2016-09-28 セイコーエプソン株式会社 電子デバイスおよびその製造方法、並びに電子機器
JP5983912B2 (ja) * 2012-02-09 2016-09-06 セイコーエプソン株式会社 電子デバイスおよびその製造方法、並びに電子機器
WO2013172814A1 (en) 2012-05-14 2013-11-21 Intel Corporation Microelectronic package utilizing multiple bumpless build-up structures and through-silicon vias
WO2013184145A1 (en) 2012-06-08 2013-12-12 Intel Corporation Microelectronic package having non-coplanar, encapsulated microelectronic devices and a bumpless build-up layer
WO2013192222A2 (en) 2012-06-18 2013-12-27 Hzo, Inc. Systems and methods for applying protective coatings to internal surfaces of fully assembled electronic devices
US10449568B2 (en) 2013-01-08 2019-10-22 Hzo, Inc. Masking substrates for application of protective coatings
US9894776B2 (en) 2013-01-08 2018-02-13 Hzo, Inc. System for refurbishing or remanufacturing an electronic device
BR112014005790A2 (pt) 2013-01-08 2017-03-28 Hzo Inc remoção de partes selecionadas de revestimentos de proteção de substratos
US9595485B2 (en) * 2014-06-26 2017-03-14 Nxp Usa, Inc. Microelectronic packages having embedded sidewall substrates and methods for the producing thereof
EP3153851B1 (en) * 2015-10-06 2024-05-01 Carrier Corporation Mems die with sensing structures

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282791A (ja) 2002-03-20 2003-10-03 Fujitsu Ltd 接触型センサ内蔵半導体装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445559A (en) * 1993-06-24 1995-08-29 Texas Instruments Incorporated Wafer-like processing after sawing DMDs
US5511428A (en) * 1994-06-10 1996-04-30 Massachusetts Institute Of Technology Backside contact of sensor microstructures
JP2928755B2 (ja) * 1996-11-05 1999-08-03 日本レック株式会社 電子部品の製造方法
JP2001227902A (ja) * 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置
US6335224B1 (en) * 2000-05-16 2002-01-01 Sandia Corporation Protection of microelectronic devices during packaging
EP1211722B9 (en) * 2000-11-30 2005-07-13 STMicroelectronics S.r.l. Manufacturing method of electronic device package
US6995034B2 (en) * 2000-12-07 2006-02-07 Reflectivity, Inc Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US6432737B1 (en) * 2001-01-03 2002-08-13 Amkor Technology, Inc. Method for forming a flip chip pressure sensor die package
US6635509B1 (en) * 2002-04-12 2003-10-21 Dalsa Semiconductor Inc. Wafer-level MEMS packaging
US7071032B2 (en) * 2002-08-01 2006-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Material to improve image sensor yield during wafer sawing
DE10246283B3 (de) * 2002-10-02 2004-03-25 Infineon Technologies Ag Verfahren zur Herstellung von Kanälen und Kavitäten in Halbleitergehäusen und elektronisches Bauteil mit derartigen Kanälen und Kavitäten
US7014888B2 (en) 2002-12-23 2006-03-21 Freescale Semiconductor, Inc. Method and structure for fabricating sensors with a sacrificial gel dome
DE10316776B4 (de) * 2003-04-11 2005-03-17 Infineon Technologies Ag Verfahren zum Erzeugen einer Schutzabdeckung für ein Bauelement
US6951769B2 (en) * 2003-06-04 2005-10-04 Texas Instruments Incorporated Method for stripping sacrificial layer in MEMS assembly
US7091058B2 (en) * 2003-12-11 2006-08-15 Omnivision Technologies, Inc. Sacrificial protective layer for image sensors and method of using

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282791A (ja) 2002-03-20 2003-10-03 Fujitsu Ltd 接触型センサ内蔵半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2008529273A (ja) 2008-07-31
TWI392032B (zh) 2013-04-01
CN101065826A (zh) 2007-10-31
EP1842224A4 (en) 2012-07-04
KR20070095959A (ko) 2007-10-01
TW200711007A (en) 2007-03-16
US20060160264A1 (en) 2006-07-20
EP1842224A1 (en) 2007-10-10
US7109055B2 (en) 2006-09-19
WO2006078374A1 (en) 2006-07-27

Similar Documents

Publication Publication Date Title
KR101174937B1 (ko) 엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치
US10157811B2 (en) Chip package and method for forming the same
CN109844938B (zh) 具有增强性能的晶片级封装
US9196754B2 (en) Chip package and fabrication method thereof
US8536672B2 (en) Image sensor package and fabrication method thereof
TWI512930B (zh) 晶片封裝體及其形成方法
US20170147857A1 (en) Chip package and method for forming the same
CN103426838B (zh) 晶片封装体及其形成方法
US20190148254A1 (en) Semiconductor device and manufacturing method thereof
US8178391B2 (en) Method for packaging semiconductors at wafer level
CN116692765A (zh) 用于封装应力敏感mems的结构和方法
TWI624039B (zh) 晶片封裝體及其製造方法
KR101671581B1 (ko) 쿨링 피처를 갖는 저프로파일 센서 패키지와 이를 제조하는 방법
US10858245B2 (en) Deposition of protective material at wafer level in front end for early stage particle and moisture protection
US20040166662A1 (en) MEMS wafer level chip scale package
US7911043B2 (en) Wafer level device package with sealing line having electroconductive pattern and method of packaging the same
US8748926B2 (en) Chip package with multiple spacers and method for forming the same
CN106935558A (zh) 晶片封装体及其制造方法
CN120166808A (zh) 光学传感器封装

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20150724

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160801

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20180801

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14