KR101158969B1 - 광 변조기를 포함하는 장치 및 반도체 평면형 광 도파관을 작동시키는 방법 - Google Patents

광 변조기를 포함하는 장치 및 반도체 평면형 광 도파관을 작동시키는 방법 Download PDF

Info

Publication number
KR101158969B1
KR101158969B1 KR1020097018204A KR20097018204A KR101158969B1 KR 101158969 B1 KR101158969 B1 KR 101158969B1 KR 1020097018204 A KR1020097018204 A KR 1020097018204A KR 20097018204 A KR20097018204 A KR 20097018204A KR 101158969 B1 KR101158969 B1 KR 101158969B1
Authority
KR
South Korea
Prior art keywords
semiconductor
optical waveguide
waveguide core
connection path
doped semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097018204A
Other languages
English (en)
Korean (ko)
Other versions
KR20090116769A (ko
Inventor
더글라스 엠 길
크리스토퍼 디 더블유 존스
산제이 샌티럴 파텔
마흐모드 라스라스
닐스 구엔테르 베이만
Original Assignee
알카텔-루센트 유에스에이 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알카텔-루센트 유에스에이 인코포레이티드 filed Critical 알카텔-루센트 유에스에이 인코포레이티드
Publication of KR20090116769A publication Critical patent/KR20090116769A/ko
Application granted granted Critical
Publication of KR101158969B1 publication Critical patent/KR101158969B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
KR1020097018204A 2007-03-01 2007-10-30 광 변조기를 포함하는 장치 및 반도체 평면형 광 도파관을 작동시키는 방법 Expired - Fee Related KR101158969B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/681,070 US7672553B2 (en) 2007-03-01 2007-03-01 High speed semiconductor optical modulator
US11/681,070 2007-03-01
PCT/US2007/022945 WO2008105854A1 (en) 2007-03-01 2007-10-30 High speed semiconductor optical modulator

Publications (2)

Publication Number Publication Date
KR20090116769A KR20090116769A (ko) 2009-11-11
KR101158969B1 true KR101158969B1 (ko) 2012-06-21

Family

ID=39046860

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018204A Expired - Fee Related KR101158969B1 (ko) 2007-03-01 2007-10-30 광 변조기를 포함하는 장치 및 반도체 평면형 광 도파관을 작동시키는 방법

Country Status (6)

Country Link
US (1) US7672553B2 (enExample)
EP (1) EP2132595B1 (enExample)
JP (2) JP5551446B2 (enExample)
KR (1) KR101158969B1 (enExample)
CN (1) CN101622570B (enExample)
WO (1) WO2008105854A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8488917B2 (en) * 2008-09-24 2013-07-16 Cornell University Electro-optic modulator
US8041158B2 (en) 2008-11-13 2011-10-18 Alcatel Lucent Multithickness layered electronic-photonic devices
US8548281B2 (en) * 2009-09-08 2013-10-01 Electronics And Telecommunications Research Institute Electro-optic modulating device
GB2477131A (en) * 2010-01-22 2011-07-27 Univ Surrey Electro-optic device
US8842942B2 (en) * 2010-02-08 2014-09-23 Samsung Electronics Co., Ltd. Optical modulator formed on bulk-silicon substrate
KR101683543B1 (ko) * 2010-02-08 2016-12-07 삼성전자 주식회사 벌크 실리콘 기판을 사용하는 변조기
GB2477935A (en) * 2010-02-17 2011-08-24 Univ Surrey Electro-optic device with a waveguide rib
CN101907785B (zh) * 2010-06-11 2015-09-16 上海华虹宏力半导体制造有限公司 一种光调制器pn结的制作方法
US8358897B1 (en) * 2010-12-10 2013-01-22 Aurrion, Llc High index bonding layer for hybrid photonic devices
US9110314B2 (en) * 2010-12-29 2015-08-18 Agency For Science, Technology And Research Optical modulator and a method of forming the same
US8542954B2 (en) * 2012-02-01 2013-09-24 Kotura, Inc. Optical component having reduced dependency on etch depth
SG2013082102A (en) 2012-11-05 2014-06-27 Agency Science Tech & Res Method for forming an optical modulator
JP6020096B2 (ja) * 2012-11-30 2016-11-02 富士通株式会社 光変調器及び光送信器
US9625746B2 (en) 2012-12-11 2017-04-18 Acacia Communications, Inc. Silicon depletion modulators with enhanced slab doping
US10025120B2 (en) 2012-12-13 2018-07-17 Luxtera, Inc. Method and system for a low parasitic silicon high-speed phase modulator having raised fingers perpendicular to the PN junction
JP2014174306A (ja) * 2013-03-08 2014-09-22 Nippon Telegr & Teleph Corp <Ntt> 光導波路構造
FR3005512A1 (fr) * 2013-05-07 2014-11-14 St Microelectronics Sa Dephaseur electro-optique a faible coefficient d'absorption
US9939666B2 (en) * 2013-06-06 2018-04-10 Acacia Communications, Inc. Silicon electro-optical modulator
CN104583856B (zh) * 2013-08-23 2017-09-29 华为技术有限公司 一种光调制器和光信号发射装置
FR3018390A1 (fr) 2014-03-10 2015-09-11 St Microelectronics Crolles 2 Dispositif de protection dynamique contre les decharges electrostatiques adapte aux dispositifs electro-optiques
WO2015180149A1 (zh) * 2014-05-30 2015-12-03 华为技术有限公司 电光调制器
US9929725B2 (en) * 2015-01-09 2018-03-27 Northwestern University System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
US10514503B2 (en) 2016-03-04 2019-12-24 The Governing Council Of The University Of Toronto System and method for manufacturing a semiconductor junction
CN107293601B (zh) * 2016-04-12 2021-10-22 朱江 一种肖特基半导体装置及其制备方法
CN106873192A (zh) * 2016-11-07 2017-06-20 北京交通大学 基于硅波导的电光超快空间调制器
US12517413B1 (en) * 2017-01-11 2026-01-06 Acacia Technology, Inc. Linear and low-power optical modulator driver
EP3571546B1 (en) * 2017-01-18 2023-03-15 NeoPhotonics Corporation Method and apparatus for phase-matched optical and rf wave propagations for semiconductor-based mzm modulators
JP6983590B2 (ja) * 2017-09-08 2021-12-17 技術研究組合光電子融合基盤技術研究所 光変調器及びその製造方法
JP6823619B2 (ja) * 2018-04-19 2021-02-03 日本電信電話株式会社 光変調器
CN109324428B (zh) * 2018-11-07 2021-11-12 三明学院 硅基电光调制器的调制臂长度设置方法及设备
CN110989211B (zh) * 2018-12-06 2023-08-22 希烽光电科技(南京)有限公司 带有梳状传输线的单片电光调制器
GB2586881B (en) 2019-09-09 2023-08-16 Rockley Photonics Ltd Optoelectronic device and method of manufacturing an optoelectronic device
US10895764B1 (en) * 2019-10-24 2021-01-19 Veo, Inc. Dielectric electro-optic phase shifter
CN110955067B (zh) * 2019-12-12 2022-09-02 武汉邮电科学研究院有限公司 一种水平分层的脊形光波导器件的有源区结构及制造方法
US12372816B2 (en) 2020-07-23 2025-07-29 Acacia Technology, Inc. Apparatus and method for a silicon modulator with strong gradient slab doping

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03196120A (ja) * 1989-12-21 1991-08-27 Internatl Business Mach Corp <Ibm> 光変調器
JPH05158085A (ja) * 1991-12-05 1993-06-25 Fujitsu Ltd 光変調装置及びその製造方法
JP2002540469A (ja) * 1999-03-25 2002-11-26 ブックハム テクノロジー ピーエルシー 半導体導波路の位相変調器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148427A (ja) * 1984-12-24 1986-07-07 Hitachi Ltd 導波形光変調器
US5164797A (en) * 1988-06-17 1992-11-17 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
JPH07211936A (ja) * 1994-01-21 1995-08-11 Sony Corp 半導体装置
GB2323450A (en) * 1997-03-20 1998-09-23 Secr Defence Optical modulator
US6627785B1 (en) * 2000-02-29 2003-09-30 Virginia Commwealth University Wound dressings with protease-lowering activity
JP2002164352A (ja) * 2000-09-13 2002-06-07 Toshiba Corp バイポーラトランジスタ、半導体発光素子、及び半導体素子
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device
US7126169B2 (en) * 2000-10-23 2006-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor element
US7386207B2 (en) * 2001-12-27 2008-06-10 Kotura, Inc. In-line light sensor
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
US7116853B2 (en) * 2003-08-15 2006-10-03 Luxtera, Inc. PN diode optical modulators fabricated in rib waveguides
US7085443B1 (en) 2003-08-15 2006-08-01 Luxtera, Inc. Doping profiles in PN diode optical modulators
US7298949B2 (en) * 2004-02-12 2007-11-20 Sioptical, Inc. SOI-based photonic bandgap devices
KR100782395B1 (ko) * 2004-02-23 2007-12-07 쿄세라 코포레이션 세라믹 히터, 그것을 이용한 웨이퍼 가열장치 및 반도체 기판 제조방법
US20060003966A1 (en) * 2004-06-16 2006-01-05 Jack Arbiser Carbazole formulations for the treatment of psoriasis and angiogenesis
US7280712B2 (en) 2005-08-04 2007-10-09 Intel Corporation Method and apparatus for phase shifiting an optical beam in an optical device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03196120A (ja) * 1989-12-21 1991-08-27 Internatl Business Mach Corp <Ibm> 光変調器
JPH05158085A (ja) * 1991-12-05 1993-06-25 Fujitsu Ltd 光変調装置及びその製造方法
JP2002540469A (ja) * 1999-03-25 2002-11-26 ブックハム テクノロジー ピーエルシー 半導体導波路の位相変調器

Also Published As

Publication number Publication date
US20080212913A1 (en) 2008-09-04
EP2132595A1 (en) 2009-12-16
JP6073753B2 (ja) 2017-02-01
JP2010520506A (ja) 2010-06-10
EP2132595B1 (en) 2016-02-17
JP5551446B2 (ja) 2014-07-16
KR20090116769A (ko) 2009-11-11
WO2008105854A1 (en) 2008-09-04
JP2013238876A (ja) 2013-11-28
CN101622570A (zh) 2010-01-06
CN101622570B (zh) 2012-07-18
US7672553B2 (en) 2010-03-02

Similar Documents

Publication Publication Date Title
KR101158969B1 (ko) 광 변조기를 포함하는 장치 및 반도체 평면형 광 도파관을 작동시키는 방법
US11886056B2 (en) Electro-optical modulator using waveguides with overlapping ridges
US10191350B2 (en) Waveguide modulators structures
JP5300807B2 (ja) 光変調素子
KR101157374B1 (ko) Ｐｎ 다이오드를 사용하는 고속 실리콘 광 변조를 위한 방법 및 장치
US8548281B2 (en) Electro-optic modulating device
US10678115B2 (en) Waveguide modulator structures
JP2010520506A5 (enExample)
CN108490650A (zh) 周期性交错波导结构、以及电光调制结构和mzi结构
CN115145057A (zh) 多掺杂平板硅光学调制器
US20160266416A1 (en) Controlled-capacitance full-depletion interdigitated pin modulator
KR101453473B1 (ko) 전기-광학 변조 소자
US11619856B1 (en) Suppressing leakage currents in periodic travelling wave electrode structures

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

S20-X000 Security interest recorded

St.27 status event code: A-4-4-S10-S20-lic-X000

S22-X000 Recordation of security interest cancelled

St.27 status event code: A-4-4-S10-S22-lic-X000

FPAY Annual fee payment

Payment date: 20150605

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160603

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20170602

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180616

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180616