JP6073753B2 - 高速の半導体光変調器 - Google Patents
高速の半導体光変調器 Download PDFInfo
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- JP6073753B2 JP6073753B2 JP2013141219A JP2013141219A JP6073753B2 JP 6073753 B2 JP6073753 B2 JP 6073753B2 JP 2013141219 A JP2013141219 A JP 2013141219A JP 2013141219 A JP2013141219 A JP 2013141219A JP 6073753 B2 JP6073753 B2 JP 6073753B2
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- 230000003287 optical effect Effects 0.000 title claims description 144
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 239000002800 charge carrier Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 23
- 239000002019 doping agent Substances 0.000 description 16
- 230000004044 response Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- 238000004088 simulation Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 108091006149 Electron carriers Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Description
諸実施形態は物理的対称を使用することができ、電荷は本質的に混ざり合うことがないので、電気的遮蔽の問題が回避され、それによって電荷移動を電界によって強めることが可能になる。
このような特徴を使用して、例えばマッハ−ツェンダ変調器、リング共振型変調器、またはこの2つの組合せの固有応答からもたらされる本質的に非線形の変調器構造の作用を抑えることができる。
図2Cの断面図は、半導体光導波路コア205における電気的変調信号290に対する電荷濃度に対応する。電気的変調信号290は、−5ボルトと+5ボルトの間で切り替わる直流バイアス電圧をもたない交流電圧波形である。図2Cでは、電気的変調信号290が、極性を示して、第1および第2の電極電圧290a、290bを表す波形として表され、それらの電圧の差は、両電極間の電位差に相当する。もちろん、両電極の一方は実際には接地することができ、他方は両電極間の電位差を使用し、対応する極性が示されている。
第1および第2の電極320、325は、半導体光導波路コア305の両端間に変調電圧を垂直に印加することができる。もちろん、特定の適用例にとって適切ならドーピング極性を反転させることもできる。
光導波路型変調器340の動作は、図2Aの光導波路型変調器200に類似する。しかし、この構造は有利なことに、半導体光導波路コア345でのキャリア濃度に、第1の電極360と第2の電極365の間の変調電圧の電界効果を加え、それによって導波路の性能の向上をもたらす。
これらの接続パスでは、バイアス電圧が0の状態において、平均電荷キャリア濃度を1立方センチメートル当たり少なくとも1×1019電荷とすることができる。
Claims (2)
- 装置であって、
1つの光変調器を含み、該光変調器が、
突条領域を含み、一端で入力光信号を受信し、対向する端で変調された光信号を出力するように構成された半導体光導波路コアを含み、該突条領域は、該半導体光導波路コア内で少なくとも1つのPN半導体接合部を有しており、該光変調器は、さらに、
第1のドープされた半導体パス及び第2のドープされた半導体パスを含み、該第1のドープされた半導体パスは、該突条領域の一方の側に隣接して横方向に位置し、該第2のドープされた半導体パスは、該突条領域の他方の側に隣接して横方向に位置し、該第1のドープされた半導体パス及び第2のドープされた半導体パスは、該入力光信号が該コア内を伝播している間に、該入力光信号の伝播方向に横切って該突条領域の両端に電圧を印加することができ、該光変調器は、さらに、
1つの電圧源を含み、
該突条領域が、一対の背面PN半導体接合部を形成する半導体層のPNPシーケンス又は半導体層のNPNシーケンスを含み、
該半導体光導波路コアは、該一対の背面PN半導体接合部の2つの背面PN半導体接合部の一方の側を形成し、
該第1のドープされた半導体パス及び該第2のドープされた半導体パスのうちの1つと、該一対の背面PN半導体接合部と、該電圧源とは、1つの電気的直列回路を形成する、装置。
- 請求項1に記載の装置において、
該突条領域の頂部の上に位置する1つの電気的コンタクトをさらに含み、それにより、該第1のドープされた半導体パス及び第2のドープされた半導体パスのうちの1つと接触している電極と前記電気的コンタクトとの間に印加される電圧によって、該突条領域内の屈折率を調整することができる、装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/681,070 US7672553B2 (en) | 2007-03-01 | 2007-03-01 | High speed semiconductor optical modulator |
US11/681,070 | 2007-03-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009551977A Division JP5551446B2 (ja) | 2007-03-01 | 2007-10-30 | 高速の半導体光変調器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013238876A JP2013238876A (ja) | 2013-11-28 |
JP2013238876A5 JP2013238876A5 (ja) | 2014-07-10 |
JP6073753B2 true JP6073753B2 (ja) | 2017-02-01 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2009551977A Expired - Fee Related JP5551446B2 (ja) | 2007-03-01 | 2007-10-30 | 高速の半導体光変調器 |
JP2013141219A Expired - Fee Related JP6073753B2 (ja) | 2007-03-01 | 2013-07-05 | 高速の半導体光変調器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009551977A Expired - Fee Related JP5551446B2 (ja) | 2007-03-01 | 2007-10-30 | 高速の半導体光変調器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7672553B2 (ja) |
EP (1) | EP2132595B1 (ja) |
JP (2) | JP5551446B2 (ja) |
KR (1) | KR101158969B1 (ja) |
CN (1) | CN101622570B (ja) |
WO (1) | WO2008105854A1 (ja) |
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GB2477131A (en) * | 2010-01-22 | 2011-07-27 | Univ Surrey | Electro-optic device |
KR101683543B1 (ko) * | 2010-02-08 | 2016-12-07 | 삼성전자 주식회사 | 벌크 실리콘 기판을 사용하는 변조기 |
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GB2477935A (en) * | 2010-02-17 | 2011-08-24 | Univ Surrey | Electro-optic device with a waveguide rib |
CN101907785B (zh) * | 2010-06-11 | 2015-09-16 | 上海华虹宏力半导体制造有限公司 | 一种光调制器pn结的制作方法 |
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US9110314B2 (en) * | 2010-12-29 | 2015-08-18 | Agency For Science, Technology And Research | Optical modulator and a method of forming the same |
US8542954B2 (en) * | 2012-02-01 | 2013-09-24 | Kotura, Inc. | Optical component having reduced dependency on etch depth |
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2007
- 2007-03-01 US US11/681,070 patent/US7672553B2/en not_active Expired - Fee Related
- 2007-10-30 KR KR1020097018204A patent/KR101158969B1/ko not_active IP Right Cessation
- 2007-10-30 CN CN2007800519416A patent/CN101622570B/zh not_active Expired - Fee Related
- 2007-10-30 JP JP2009551977A patent/JP5551446B2/ja not_active Expired - Fee Related
- 2007-10-30 WO PCT/US2007/022945 patent/WO2008105854A1/en active Application Filing
- 2007-10-30 EP EP07839857.5A patent/EP2132595B1/en not_active Not-in-force
-
2013
- 2013-07-05 JP JP2013141219A patent/JP6073753B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2132595B1 (en) | 2016-02-17 |
US7672553B2 (en) | 2010-03-02 |
WO2008105854A1 (en) | 2008-09-04 |
EP2132595A1 (en) | 2009-12-16 |
JP2010520506A (ja) | 2010-06-10 |
CN101622570A (zh) | 2010-01-06 |
KR101158969B1 (ko) | 2012-06-21 |
KR20090116769A (ko) | 2009-11-11 |
US20080212913A1 (en) | 2008-09-04 |
JP2013238876A (ja) | 2013-11-28 |
JP5551446B2 (ja) | 2014-07-16 |
CN101622570B (zh) | 2012-07-18 |
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