JP2010520506A - 高速の半導体光変調器 - Google Patents
高速の半導体光変調器 Download PDFInfo
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- JP2010520506A JP2010520506A JP2009551977A JP2009551977A JP2010520506A JP 2010520506 A JP2010520506 A JP 2010520506A JP 2009551977 A JP2009551977 A JP 2009551977A JP 2009551977 A JP2009551977 A JP 2009551977A JP 2010520506 A JP2010520506 A JP 2010520506A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 154
- 239000004065 semiconductor Substances 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 claims description 14
- 239000002800 charge carrier Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 23
- 239000002019 doping agent Substances 0.000 description 16
- 230000004044 response Effects 0.000 description 14
- 230000005684 electric field Effects 0.000 description 11
- 238000004088 simulation Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 108091006149 Electron carriers Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (10)
- 半導体平面光導波路コアと、
前記コアの両側に隣接して配置され、前記コアの両端間に電圧を印加することができるドープ半導体接続パスとを備える装置であって、
前記光導波路コアおよび前記接続パスが、背面PN半導体接合部を有する構造を形成する装置。 - 前記光導波路コアの頂面上に配置された電極をさらに備え、それにより前記電極、前記ドープ半導体接続パスの少なくとも1つに接触する別の電極との間に印加された電圧によって、前記コア中の屈折率が調整できるようになる、請求項1に記載の装置。
- 前記光導波路コアの突条部分の頂面上に配置された頂部ドープ半導体接続パス中に、電極をさらに備え、それにより前記電極と、前記ドープ半導体接続パスの少なくとも1つに接触する別の電極との間に印加された電圧によって、前記コア中の屈折率が調整できるようになる、請求項1に記載の装置。
- 前記光導波路コアの前記突条部分が、前記頂部ドープ半導体接続パスと、前記ドープ半導体接続パスの少なくとも1つとをもたらす頂部スラブおよび底部スラブとの厚さを合わせたものよりも大きい、請求項3に記載の装置。
- 半導体平面光導波路の動作方法であって、
前記導波路の半導体光導波路コア中に光信号を送り込むステップと、
前記コアに沿って光信号が伝播している間、背面PN半導体接合部付近のキャリア密度が変調されるように、前記コアの幅または高さの両端間に印加される電圧を変調するステップとを含み、各PN半導体接合部の一部分が前記コア中に配置されている方法。 - 前記背面PN半導体接合部が前記光導波路コアの両側に隣接して配置されている、請求項5に記載の方法。
- 前記背面PN半導体接合部の少なくとも1つが、ドープ半導体層間に挟まれた層をさらに含む、請求項5に記載の方法。
- 少なくとも1つのPN半導体接合部がその中に配置された突条部分を有する半導体光導波路コアと、
前記突条部分の横に隣接して配置され、前記突条部分に電圧を印加することができる1つまたは複数のドープ半導体接続パスとを備える装置。 - 前記突条部分の頂面上に配置された電気コンタクトをさらに備え、それにより前記電極、前記1つまたは複数のドープ半導体接続パスの少なくとも1つに接触する別の電極との間に印加された電圧によって、前記コア中の屈折率が調整できるようになる、請求項8に記載の装置。
- 前記電気コンタクトが前記突条部分の横幅より大きい横幅を有する、請求項8に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/681,070 US7672553B2 (en) | 2007-03-01 | 2007-03-01 | High speed semiconductor optical modulator |
US11/681,070 | 2007-03-01 | ||
PCT/US2007/022945 WO2008105854A1 (en) | 2007-03-01 | 2007-10-30 | High speed semiconductor optical modulator |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013141219A Division JP6073753B2 (ja) | 2007-03-01 | 2013-07-05 | 高速の半導体光変調器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010520506A true JP2010520506A (ja) | 2010-06-10 |
JP2010520506A5 JP2010520506A5 (ja) | 2012-07-19 |
JP5551446B2 JP5551446B2 (ja) | 2014-07-16 |
Family
ID=39046860
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009551977A Expired - Fee Related JP5551446B2 (ja) | 2007-03-01 | 2007-10-30 | 高速の半導体光変調器 |
JP2013141219A Expired - Fee Related JP6073753B2 (ja) | 2007-03-01 | 2013-07-05 | 高速の半導体光変調器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013141219A Expired - Fee Related JP6073753B2 (ja) | 2007-03-01 | 2013-07-05 | 高速の半導体光変調器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7672553B2 (ja) |
EP (1) | EP2132595B1 (ja) |
JP (2) | JP5551446B2 (ja) |
KR (1) | KR101158969B1 (ja) |
CN (1) | CN101622570B (ja) |
WO (1) | WO2008105854A1 (ja) |
Cited By (1)
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JP2014174306A (ja) * | 2013-03-08 | 2014-09-22 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路構造 |
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US8488917B2 (en) * | 2008-09-24 | 2013-07-16 | Cornell University | Electro-optic modulator |
US8041158B2 (en) | 2008-11-13 | 2011-10-18 | Alcatel Lucent | Multithickness layered electronic-photonic devices |
US8548281B2 (en) * | 2009-09-08 | 2013-10-01 | Electronics And Telecommunications Research Institute | Electro-optic modulating device |
GB2477131A (en) * | 2010-01-22 | 2011-07-27 | Univ Surrey | Electro-optic device |
KR101683543B1 (ko) * | 2010-02-08 | 2016-12-07 | 삼성전자 주식회사 | 벌크 실리콘 기판을 사용하는 변조기 |
US8842942B2 (en) * | 2010-02-08 | 2014-09-23 | Samsung Electronics Co., Ltd. | Optical modulator formed on bulk-silicon substrate |
GB2477935A (en) * | 2010-02-17 | 2011-08-24 | Univ Surrey | Electro-optic device with a waveguide rib |
CN101907785B (zh) * | 2010-06-11 | 2015-09-16 | 上海华虹宏力半导体制造有限公司 | 一种光调制器pn结的制作方法 |
US8358897B1 (en) * | 2010-12-10 | 2013-01-22 | Aurrion, Llc | High index bonding layer for hybrid photonic devices |
US9110314B2 (en) * | 2010-12-29 | 2015-08-18 | Agency For Science, Technology And Research | Optical modulator and a method of forming the same |
US8542954B2 (en) * | 2012-02-01 | 2013-09-24 | Kotura, Inc. | Optical component having reduced dependency on etch depth |
US9329415B2 (en) | 2012-11-05 | 2016-05-03 | Agency For Science, Technology And Research | Method for forming an optical modulator |
JP6020096B2 (ja) * | 2012-11-30 | 2016-11-02 | 富士通株式会社 | 光変調器及び光送信器 |
US9625746B2 (en) | 2012-12-11 | 2017-04-18 | Acacia Communications, Inc. | Silicon depletion modulators with enhanced slab doping |
US10025120B2 (en) * | 2012-12-13 | 2018-07-17 | Luxtera, Inc. | Method and system for a low parasitic silicon high-speed phase modulator having raised fingers perpendicular to the PN junction |
FR3005512A1 (fr) | 2013-05-07 | 2014-11-14 | St Microelectronics Sa | Dephaseur electro-optique a faible coefficient d'absorption |
US9939666B2 (en) | 2013-06-06 | 2018-04-10 | Acacia Communications, Inc. | Silicon electro-optical modulator |
CN104583856B (zh) * | 2013-08-23 | 2017-09-29 | 华为技术有限公司 | 一种光调制器和光信号发射装置 |
FR3018390A1 (fr) | 2014-03-10 | 2015-09-11 | St Microelectronics Crolles 2 | Dispositif de protection dynamique contre les decharges electrostatiques adapte aux dispositifs electro-optiques |
WO2015180149A1 (zh) * | 2014-05-30 | 2015-12-03 | 华为技术有限公司 | 电光调制器 |
US9929725B2 (en) * | 2015-01-09 | 2018-03-27 | Northwestern University | System and method for anti-ambipolar heterojunctions from solution-processed semiconductors |
US10514503B2 (en) | 2016-03-04 | 2019-12-24 | The Governing Council Of The University Of Toronto | System and method for manufacturing a semiconductor junction |
CN107293601B (zh) * | 2016-04-12 | 2021-10-22 | 朱江 | 一种肖特基半导体装置及其制备方法 |
CN106873192A (zh) * | 2016-11-07 | 2017-06-20 | 北京交通大学 | 基于硅波导的电光超快空间调制器 |
EP3571546B1 (en) | 2017-01-18 | 2023-03-15 | NeoPhotonics Corporation | Method and apparatus for phase-matched optical and rf wave propagations for semiconductor-based mzm modulators |
JP6983590B2 (ja) * | 2017-09-08 | 2021-12-17 | 技術研究組合光電子融合基盤技術研究所 | 光変調器及びその製造方法 |
JP6823619B2 (ja) * | 2018-04-19 | 2021-02-03 | 日本電信電話株式会社 | 光変調器 |
CN109324428B (zh) * | 2018-11-07 | 2021-11-12 | 三明学院 | 硅基电光调制器的调制臂长度设置方法及设备 |
CN110989211B (zh) * | 2018-12-06 | 2023-08-22 | 希烽光电科技(南京)有限公司 | 带有梳状传输线的单片电光调制器 |
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CN110955067B (zh) * | 2019-12-12 | 2022-09-02 | 武汉邮电科学研究院有限公司 | 一种水平分层的脊形光波导器件的有源区结构及制造方法 |
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2007
- 2007-03-01 US US11/681,070 patent/US7672553B2/en not_active Expired - Fee Related
- 2007-10-30 KR KR1020097018204A patent/KR101158969B1/ko not_active IP Right Cessation
- 2007-10-30 CN CN2007800519416A patent/CN101622570B/zh not_active Expired - Fee Related
- 2007-10-30 JP JP2009551977A patent/JP5551446B2/ja not_active Expired - Fee Related
- 2007-10-30 WO PCT/US2007/022945 patent/WO2008105854A1/en active Application Filing
- 2007-10-30 EP EP07839857.5A patent/EP2132595B1/en not_active Not-in-force
-
2013
- 2013-07-05 JP JP2013141219A patent/JP6073753B2/ja not_active Expired - Fee Related
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JPH03196120A (ja) * | 1989-12-21 | 1991-08-27 | Internatl Business Mach Corp <Ibm> | 光変調器 |
JPH05158085A (ja) * | 1991-12-05 | 1993-06-25 | Fujitsu Ltd | 光変調装置及びその製造方法 |
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JP2014174306A (ja) * | 2013-03-08 | 2014-09-22 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路構造 |
Also Published As
Publication number | Publication date |
---|---|
EP2132595B1 (en) | 2016-02-17 |
US7672553B2 (en) | 2010-03-02 |
WO2008105854A1 (en) | 2008-09-04 |
EP2132595A1 (en) | 2009-12-16 |
JP6073753B2 (ja) | 2017-02-01 |
CN101622570A (zh) | 2010-01-06 |
KR101158969B1 (ko) | 2012-06-21 |
KR20090116769A (ko) | 2009-11-11 |
US20080212913A1 (en) | 2008-09-04 |
JP2013238876A (ja) | 2013-11-28 |
JP5551446B2 (ja) | 2014-07-16 |
CN101622570B (zh) | 2012-07-18 |
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