JP5551446B2 - 高速の半導体光変調器 - Google Patents

高速の半導体光変調器 Download PDF

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Publication number
JP5551446B2
JP5551446B2 JP2009551977A JP2009551977A JP5551446B2 JP 5551446 B2 JP5551446 B2 JP 5551446B2 JP 2009551977 A JP2009551977 A JP 2009551977A JP 2009551977 A JP2009551977 A JP 2009551977A JP 5551446 B2 JP5551446 B2 JP 5551446B2
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semiconductor
optical waveguide
waveguide core
planar optical
continuous
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Japanese (ja)
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JP2010520506A5 (enExample
JP2010520506A (ja
Inventor
ギル，ダグラス，エム．
ジョーンズ，クリストファー，ディーダブリュ
パテル，サンジャイ，シャンティラル
ラスラス，マハムード
ウェイマン，ニルズ，ギュンター
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アルカテル−ルーセント ユーエスエー インコーポレーテッド
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
JP2009551977A 2007-03-01 2007-10-30 高速の半導体光変調器 Expired - Fee Related JP5551446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/681,070 US7672553B2 (en) 2007-03-01 2007-03-01 High speed semiconductor optical modulator
US11/681,070 2007-03-01
PCT/US2007/022945 WO2008105854A1 (en) 2007-03-01 2007-10-30 High speed semiconductor optical modulator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013141219A Division JP6073753B2 (ja) 2007-03-01 2013-07-05 高速の半導体光変調器

Publications (3)

Publication Number Publication Date
JP2010520506A JP2010520506A (ja) 2010-06-10
JP2010520506A5 JP2010520506A5 (enExample) 2012-07-19
JP5551446B2 true JP5551446B2 (ja) 2014-07-16

Family

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Family Applications (2)

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JP2009551977A Expired - Fee Related JP5551446B2 (ja) 2007-03-01 2007-10-30 高速の半導体光変調器
JP2013141219A Expired - Fee Related JP6073753B2 (ja) 2007-03-01 2013-07-05 高速の半導体光変調器

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JP2013141219A Expired - Fee Related JP6073753B2 (ja) 2007-03-01 2013-07-05 高速の半導体光変調器

Country Status (6)

Country Link
US (1) US7672553B2 (enExample)
EP (1) EP2132595B1 (enExample)
JP (2) JP5551446B2 (enExample)
KR (1) KR101158969B1 (enExample)
CN (1) CN101622570B (enExample)
WO (1) WO2008105854A1 (enExample)

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US8842942B2 (en) * 2010-02-08 2014-09-23 Samsung Electronics Co., Ltd. Optical modulator formed on bulk-silicon substrate
KR101683543B1 (ko) * 2010-02-08 2016-12-07 삼성전자 주식회사 벌크 실리콘 기판을 사용하는 변조기
GB2477935A (en) * 2010-02-17 2011-08-24 Univ Surrey Electro-optic device with a waveguide rib
CN101907785B (zh) * 2010-06-11 2015-09-16 上海华虹宏力半导体制造有限公司 一种光调制器pn结的制作方法
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US8542954B2 (en) * 2012-02-01 2013-09-24 Kotura, Inc. Optical component having reduced dependency on etch depth
SG2013082102A (en) 2012-11-05 2014-06-27 Agency Science Tech & Res Method for forming an optical modulator
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US9625746B2 (en) 2012-12-11 2017-04-18 Acacia Communications, Inc. Silicon depletion modulators with enhanced slab doping
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JP2014174306A (ja) * 2013-03-08 2014-09-22 Nippon Telegr & Teleph Corp <Ntt> 光導波路構造
FR3005512A1 (fr) * 2013-05-07 2014-11-14 St Microelectronics Sa Dephaseur electro-optique a faible coefficient d'absorption
US9939666B2 (en) * 2013-06-06 2018-04-10 Acacia Communications, Inc. Silicon electro-optical modulator
CN104583856B (zh) * 2013-08-23 2017-09-29 华为技术有限公司 一种光调制器和光信号发射装置
FR3018390A1 (fr) 2014-03-10 2015-09-11 St Microelectronics Crolles 2 Dispositif de protection dynamique contre les decharges electrostatiques adapte aux dispositifs electro-optiques
WO2015180149A1 (zh) * 2014-05-30 2015-12-03 华为技术有限公司 电光调制器
US9929725B2 (en) * 2015-01-09 2018-03-27 Northwestern University System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
US10514503B2 (en) 2016-03-04 2019-12-24 The Governing Council Of The University Of Toronto System and method for manufacturing a semiconductor junction
CN107293601B (zh) * 2016-04-12 2021-10-22 朱江 一种肖特基半导体装置及其制备方法
CN106873192A (zh) * 2016-11-07 2017-06-20 北京交通大学 基于硅波导的电光超快空间调制器
US12517413B1 (en) * 2017-01-11 2026-01-06 Acacia Technology, Inc. Linear and low-power optical modulator driver
EP3571546B1 (en) * 2017-01-18 2023-03-15 NeoPhotonics Corporation Method and apparatus for phase-matched optical and rf wave propagations for semiconductor-based mzm modulators
JP6983590B2 (ja) * 2017-09-08 2021-12-17 技術研究組合光電子融合基盤技術研究所 光変調器及びその製造方法
JP6823619B2 (ja) * 2018-04-19 2021-02-03 日本電信電話株式会社 光変調器
CN109324428B (zh) * 2018-11-07 2021-11-12 三明学院 硅基电光调制器的调制臂长度设置方法及设备
CN110989211B (zh) * 2018-12-06 2023-08-22 希烽光电科技(南京)有限公司 带有梳状传输线的单片电光调制器
GB2586881B (en) 2019-09-09 2023-08-16 Rockley Photonics Ltd Optoelectronic device and method of manufacturing an optoelectronic device
US10895764B1 (en) * 2019-10-24 2021-01-19 Veo, Inc. Dielectric electro-optic phase shifter
CN110955067B (zh) * 2019-12-12 2022-09-02 武汉邮电科学研究院有限公司 一种水平分层的脊形光波导器件的有源区结构及制造方法
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Also Published As

Publication number Publication date
US20080212913A1 (en) 2008-09-04
EP2132595A1 (en) 2009-12-16
JP6073753B2 (ja) 2017-02-01
JP2010520506A (ja) 2010-06-10
EP2132595B1 (en) 2016-02-17
KR20090116769A (ko) 2009-11-11
KR101158969B1 (ko) 2012-06-21
WO2008105854A1 (en) 2008-09-04
JP2013238876A (ja) 2013-11-28
CN101622570A (zh) 2010-01-06
CN101622570B (zh) 2012-07-18
US7672553B2 (en) 2010-03-02

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