KR101150551B1 - 8족 (ⅷ) 메탈로센 전구체를 사용한 증착 방법 - Google Patents

8족 (ⅷ) 메탈로센 전구체를 사용한 증착 방법 Download PDF

Info

Publication number
KR101150551B1
KR101150551B1 KR1020057007501A KR20057007501A KR101150551B1 KR 101150551 B1 KR101150551 B1 KR 101150551B1 KR 1020057007501 A KR1020057007501 A KR 1020057007501A KR 20057007501 A KR20057007501 A KR 20057007501A KR 101150551 B1 KR101150551 B1 KR 101150551B1
Authority
KR
South Korea
Prior art keywords
integer
film
precursor
substrate
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057007501A
Other languages
English (en)
Korean (ko)
Other versions
KR20050074975A (ko
Inventor
데이비드 엠. 톰슨
신티아 에이. 후버
존 디. 펙
마이클 엠. 리트윈
Original Assignee
프랙스에어 테크놀로지, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/685,785 external-priority patent/US7927658B2/en
Priority claimed from US10/685,777 external-priority patent/US6884901B2/en
Priority claimed from US10/686,254 external-priority patent/US6919468B2/en
Application filed by 프랙스에어 테크놀로지, 인코포레이티드 filed Critical 프랙스에어 테크놀로지, 인코포레이티드
Publication of KR20050074975A publication Critical patent/KR20050074975A/ko
Application granted granted Critical
Publication of KR101150551B1 publication Critical patent/KR101150551B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057007501A 2002-10-31 2003-10-30 8족 (ⅷ) 메탈로센 전구체를 사용한 증착 방법 Expired - Fee Related KR101150551B1 (ko)

Applications Claiming Priority (23)

Application Number Priority Date Filing Date Title
US42294602P 2002-10-31 2002-10-31
US42294702P 2002-10-31 2002-10-31
US60/422,946 2002-10-31
US60/422,947 2002-10-31
US42628402P 2002-11-14 2002-11-14
US60/426,284 2002-11-14
US42746102P 2002-11-18 2002-11-18
US60/427,461 2002-11-18
US44632003P 2003-02-07 2003-02-07
US60/446,320 2003-02-07
US45371803P 2003-04-18 2003-04-18
US45371903P 2003-04-18 2003-04-18
US45371703P 2003-04-18 2003-04-18
US60/453,719 2003-04-18
US60/453,717 2003-04-18
US60/453,718 2003-04-18
US10/686,254 2003-10-16
US10/685,785 US7927658B2 (en) 2002-10-31 2003-10-16 Deposition processes using group 8 (VIII) metallocene precursors
US10/685,777 US6884901B2 (en) 2002-10-31 2003-10-16 Methods for making metallocene compounds
US10/686,254 US6919468B2 (en) 2002-10-31 2003-10-16 Asymmetric group 8 (VIII) metallocene compounds
US10/685,777 2003-10-16
US10/685,785 2003-10-16
PCT/US2003/034494 WO2004041753A2 (en) 2002-10-31 2003-10-30 Deposition processes using group 8 (viii) metallocene precursors

Publications (2)

Publication Number Publication Date
KR20050074975A KR20050074975A (ko) 2005-07-19
KR101150551B1 true KR101150551B1 (ko) 2012-07-03

Family

ID=32315054

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020057007501A Expired - Fee Related KR101150551B1 (ko) 2002-10-31 2003-10-30 8족 (ⅷ) 메탈로센 전구체를 사용한 증착 방법
KR1020057007554A Expired - Fee Related KR100995223B1 (ko) 2002-10-31 2003-10-30 메탈로센 화합물의 제조 방법
KR1020057007504A Expired - Lifetime KR100997838B1 (ko) 2002-10-31 2003-10-30 비대칭 8족（ｖｉｉｉ） 메탈로센 화합물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020057007554A Expired - Fee Related KR100995223B1 (ko) 2002-10-31 2003-10-30 메탈로센 화합물의 제조 방법
KR1020057007504A Expired - Lifetime KR100997838B1 (ko) 2002-10-31 2003-10-30 비대칭 8족（ｖｉｉｉ） 메탈로센 화합물

Country Status (6)

Country Link
EP (3) EP1556395B1 (https=)
JP (3) JP4538407B2 (https=)
KR (3) KR101150551B1 (https=)
AU (3) AU2003301874A1 (https=)
TW (1) TWI274082B (https=)
WO (3) WO2004042354A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7048968B2 (en) 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US6987063B2 (en) 2004-06-10 2006-01-17 Freescale Semiconductor, Inc. Method to reduce impurity elements during semiconductor film deposition
US7816550B2 (en) * 2005-02-10 2010-10-19 Praxair Technology, Inc. Processes for the production of organometallic compounds
US7485338B2 (en) * 2005-03-31 2009-02-03 Tokyo Electron Limited Method for precursor delivery
JP2009007270A (ja) * 2007-06-27 2009-01-15 Tosoh Corp ルテニウム化合物の製造方法および薄膜の製造方法
KR101598485B1 (ko) * 2014-06-20 2016-02-29 주식회사 유진테크 머티리얼즈 성막용 전구체 조성물 및 이를 이용한 박막 형성 방법
KR101636491B1 (ko) 2014-07-09 2016-07-05 한국화학연구원 루테늄 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법
KR102486128B1 (ko) 2020-12-30 2023-01-06 에스케이트리켐 주식회사 유기금속 할로겐화물을 함유하는 금속막 형성용 전구체, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020004293A1 (en) * 2000-05-15 2002-01-10 Soininen Pekka J. Method of growing electrical conductors

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3294685A (en) * 1952-04-21 1966-12-27 Gulf Research Development Co Organic compositions containing a metallo cyclopentadienyl
US3035978A (en) * 1957-08-12 1962-05-22 Ici Ltd Ferrocene hematinic compositions and therapy
GB864198A (en) * 1959-01-07 1961-03-29 Ici Ltd A process for the manufacture of ferrocene derivatives
BE623679A (https=) * 1961-10-18
US3535356A (en) * 1968-06-11 1970-10-20 Gulf Research Development Co Process for producing dicyclopentadienyliron compounds
US4066569A (en) * 1975-12-30 1978-01-03 Hughes Aircraft Company Dopants for dynamic scattering liquid crystals
PL124360B1 (en) * 1980-02-27 1983-01-31 Politechnika Gdanska Process for preparing ruthenocene
JPH02250892A (ja) * 1989-03-24 1990-10-08 Idemitsu Kosan Co Ltd 新規フェロセン誘導体，それを含有する界面活性剤及び有機薄膜の製造方法
JPH1125589A (ja) * 1997-07-04 1999-01-29 Matsushita Electric Ind Co Ltd 磁気記録再生装置
JP3371328B2 (ja) * 1997-07-17 2003-01-27 株式会社高純度化学研究所 ビス（アルキルシクロペンタジエニル）ルテニウム錯 体の製造方法およびそれを用いたルテニウム含有薄膜 の製造方法
JP2000281694A (ja) * 1999-03-29 2000-10-10 Tanaka Kikinzoku Kogyo Kk 有機金属気相エピタキシー用の有機金属化合物
JP2001122887A (ja) * 1999-10-25 2001-05-08 Tanaka Kikinzoku Kogyo Kk 化学気相蒸着用の有機金属化合物及びその有機金属化合物の製造方法並びにその有機金属化合物を用いた薄膜の製造方法
JP4162366B2 (ja) * 2000-03-31 2008-10-08 田中貴金属工業株式会社 Ｃｖｄ薄膜形成プロセス及びｃｖｄ薄膜製造装置
JP4512248B2 (ja) * 2000-09-26 2010-07-28 田中貴金属工業株式会社 ビス（アルキルシクロペンタジエニル）ルテニウムの製造方法及びその方法により製造されるビス（アルキルシクロペンタジエニル）ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の化学気相蒸着方法
JP4759126B2 (ja) * 2000-10-11 2011-08-31 田中貴金属工業株式会社 化学気相蒸着用の有機金属化合物及び化学気相蒸着用の有機金属化合物の製造方法並びに貴金属薄膜及び貴金属化合物薄膜の化学気相蒸着方法
JP3598055B2 (ja) * 2000-11-08 2004-12-08 田中貴金属工業株式会社 ビス（アルキルシクロペンタジエニル）ルテニウムの製造方法及びその製造方法により製造されるビス（アルキルシクロペンタジエニル）ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の製造方法
US20020161253A1 (en) * 2001-04-30 2002-10-31 Boulder Scientific Company Synthesis of bis (cyclopentadienyl) and bis (indenyl) ruthenium complexes
US6521772B1 (en) * 2001-09-27 2003-02-18 Praxair Technology, Inc. Synthesis of substituted ruthenocene complexes
US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020004293A1 (en) * 2000-05-15 2002-01-10 Soininen Pekka J. Method of growing electrical conductors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HUFFMAN, J. W. & COPE, J. F. 'Reactions of 2-Methylchloroferrocene. Evidence for the Ferrocyne Intermediate' J. Org. Chem., Vol.36(26), page 4068 (1971)*

Also Published As

Publication number Publication date
WO2004042354A2 (en) 2004-05-21
KR20050084901A (ko) 2005-08-29
JP4538407B2 (ja) 2010-09-08
EP1556527B1 (en) 2012-12-12
AU2003301873A8 (en) 2004-06-07
JP2006504806A (ja) 2006-02-09
WO2004041753A9 (en) 2004-11-25
AU2003301874A1 (en) 2004-06-07
JP4542506B2 (ja) 2010-09-15
KR100997838B1 (ko) 2010-12-01
TW200420746A (en) 2004-10-16
WO2004041832A2 (en) 2004-05-21
JP4560484B2 (ja) 2010-10-13
JP2006511598A (ja) 2006-04-06
WO2004041832A3 (en) 2004-09-23
AU2003301874A8 (en) 2004-06-07
WO2004041753A2 (en) 2004-05-21
EP1556527A4 (en) 2011-05-25
EP1556395A4 (en) 2008-02-20
JP2006519303A (ja) 2006-08-24
EP1556395B1 (en) 2018-09-12
AU2003301884A8 (en) 2004-06-07
EP1556394A2 (en) 2005-07-27
KR100995223B1 (ko) 2010-11-17
TWI274082B (en) 2007-02-21
WO2004042354A3 (en) 2004-09-23
AU2003301873A1 (en) 2004-06-07
EP1556527A2 (en) 2005-07-27
KR20050074975A (ko) 2005-07-19
EP1556394A4 (en) 2008-02-20
EP1556395A2 (en) 2005-07-27
WO2004041753A3 (en) 2004-09-02
KR20050075763A (ko) 2005-07-21
AU2003301884A1 (en) 2004-06-07

Similar Documents

Publication Publication Date Title
EP2069373B1 (en) Organometallic precursor compounds
JP5918316B2 (ja) 揮発性ジヒドロピラジニル及びジヒドロピラジン金属錯体
CN110073474B (zh) 锆前体、铪前体、钛前体及使用其沉积含第4族的膜
US9416443B2 (en) Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors
TW202100535A (zh) 用於薄膜沉積的新穎第v及vi族過渡金屬前驅物
US7927658B2 (en) Deposition processes using group 8 (VIII) metallocene precursors
WO2007041089A2 (en) Organometallic compounds and methods of use thereof
WO2009094259A1 (en) Organometallic compounds processes and methods of use
US7547464B2 (en) Organometallic precursor compounds
US7244858B2 (en) Organometallic precursor compounds
US7959986B2 (en) Organometallic compounds, processes for the preparation thereof and methods of use thereof
KR101150551B1 (ko) 8족 (ⅷ) 메탈로센 전구체를 사용한 증착 방법
WO2006088686A2 (en) Organoaluminum precursor compounds
CN101316855A (zh) 有机金属化合物及其用法
WO2007055140A1 (ja) チタン錯体、それらの製造方法、チタン含有薄膜及びそれらの形成方法
US7723535B2 (en) Organometallic precursor compounds
TWI875599B (zh) 藉由不可芳香化的環狀二烯釕（０）錯合物沈積含釕膜
TWI324186B (en) Deposition processes using group 8 (viii) metallocene precursors

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20150511

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160510

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20170512

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20180510

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190430

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200522

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200522