EP1556394A4 - Asymmetric group 8 (viii) metallocene compounds - Google Patents

Asymmetric group 8 (viii) metallocene compounds

Info

Publication number
EP1556394A4
EP1556394A4 EP03810819A EP03810819A EP1556394A4 EP 1556394 A4 EP1556394 A4 EP 1556394A4 EP 03810819 A EP03810819 A EP 03810819A EP 03810819 A EP03810819 A EP 03810819A EP 1556394 A4 EP1556394 A4 EP 1556394A4
Authority
EP
European Patent Office
Prior art keywords
viii
metallocene compounds
asymmetric group
asymmetric
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03810819A
Other languages
German (de)
French (fr)
Other versions
EP1556394A2 (en
Inventor
David M Thompson
Cynthia A Hoover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Praxair Technology Inc
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/685,785 external-priority patent/US7927658B2/en
Priority claimed from US10/686,254 external-priority patent/US6919468B2/en
Priority claimed from US10/685,777 external-priority patent/US6884901B2/en
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of EP1556394A2 publication Critical patent/EP1556394A2/en
Publication of EP1556394A4 publication Critical patent/EP1556394A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
EP03810819A 2002-10-31 2003-10-30 Asymmetric group 8 (viii) metallocene compounds Withdrawn EP1556394A4 (en)

Applications Claiming Priority (23)

Application Number Priority Date Filing Date Title
US685777 2000-10-10
US42294702P 2002-10-31 2002-10-31
US42294602P 2002-10-31 2002-10-31
US422947P 2002-10-31
US422946P 2002-10-31
US42628402P 2002-11-14 2002-11-14
US426284P 2002-11-14
US42746102P 2002-11-18 2002-11-18
US427461P 2002-11-18
US44632003P 2003-02-07 2003-02-07
US446320P 2003-02-07
US45371803P 2003-04-18 2003-04-18
US45371903P 2003-04-18 2003-04-18
US45371703P 2003-04-18 2003-04-18
US453717P 2003-04-18
US453719P 2003-04-18
US453718P 2003-04-18
US686254 2003-10-16
US685785 2003-10-16
US10/685,785 US7927658B2 (en) 2002-10-31 2003-10-16 Deposition processes using group 8 (VIII) metallocene precursors
US10/686,254 US6919468B2 (en) 2002-10-31 2003-10-16 Asymmetric group 8 (VIII) metallocene compounds
US10/685,777 US6884901B2 (en) 2002-10-31 2003-10-16 Methods for making metallocene compounds
PCT/US2003/034497 WO2004041832A2 (en) 2002-10-31 2003-10-30 Asymmetric group 8 (viii) metallocene compounds

Publications (2)

Publication Number Publication Date
EP1556394A2 EP1556394A2 (en) 2005-07-27
EP1556394A4 true EP1556394A4 (en) 2008-02-20

Family

ID=32315054

Family Applications (3)

Application Number Title Priority Date Filing Date
EP03810820.5A Expired - Fee Related EP1556395B1 (en) 2002-10-31 2003-10-30 Methods for making metallocene compounds
EP03810819A Withdrawn EP1556394A4 (en) 2002-10-31 2003-10-30 Asymmetric group 8 (viii) metallocene compounds
EP03810818A Expired - Fee Related EP1556527B1 (en) 2002-10-31 2003-10-30 Deposition processes using group 8 (viii) metallocene precursors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP03810820.5A Expired - Fee Related EP1556395B1 (en) 2002-10-31 2003-10-30 Methods for making metallocene compounds

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP03810818A Expired - Fee Related EP1556527B1 (en) 2002-10-31 2003-10-30 Deposition processes using group 8 (viii) metallocene precursors

Country Status (6)

Country Link
EP (3) EP1556395B1 (en)
JP (3) JP4538407B2 (en)
KR (3) KR100997838B1 (en)
AU (3) AU2003301874A1 (en)
TW (1) TWI274082B (en)
WO (3) WO2004042354A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7048968B2 (en) 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US6987063B2 (en) 2004-06-10 2006-01-17 Freescale Semiconductor, Inc. Method to reduce impurity elements during semiconductor film deposition
US7816550B2 (en) * 2005-02-10 2010-10-19 Praxair Technology, Inc. Processes for the production of organometallic compounds
US7485338B2 (en) * 2005-03-31 2009-02-03 Tokyo Electron Limited Method for precursor delivery
JP2009007270A (en) * 2007-06-27 2009-01-15 Tosoh Corp Method for producing ruthenium compound and method for producing thin film
KR101598485B1 (en) * 2014-06-20 2016-02-29 주식회사 유진테크 머티리얼즈 Precursor compositions and Method for forming a thin film using thereof
KR101636491B1 (en) 2014-07-09 2016-07-05 한국화학연구원 Ruthenium precursors, preparation method thereof and process for the formation of thin films using the same
KR102486128B1 (en) 2020-12-30 2023-01-06 에스케이트리켐 주식회사 Precursor comprising organometal halide, deposition method of film and semiconductor device of the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207232B1 (en) * 1997-07-17 2001-03-27 Kabushikikaisha Kojundokagaku Kenkyusho Process for producing bis(alkyl-cyclopentadienyl) ruthenium complexes and process for producing ruthenium-containing films by using the same

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US3294685A (en) * 1952-04-21 1966-12-27 Gulf Research Development Co Organic compositions containing a metallo cyclopentadienyl
US3035978A (en) * 1957-08-12 1962-05-22 Ici Ltd Ferrocene hematinic compositions and therapy
GB864198A (en) * 1959-01-07 1961-03-29 Ici Ltd A process for the manufacture of ferrocene derivatives
NL284400A (en) * 1961-10-18
US3535356A (en) * 1968-06-11 1970-10-20 Gulf Research Development Co Process for producing dicyclopentadienyliron compounds
US4066569A (en) * 1975-12-30 1978-01-03 Hughes Aircraft Company Dopants for dynamic scattering liquid crystals
PL124360B1 (en) * 1980-02-27 1983-01-31 Politechnika Gdanska Process for preparing ruthenocene
JPH02250892A (en) * 1989-03-24 1990-10-08 Idemitsu Kosan Co Ltd New ferrocene derivative, surfactant containing the same and production of organic thin film
JPH1125589A (en) * 1997-07-04 1999-01-29 Matsushita Electric Ind Co Ltd Magnetic recording and reproducing device
JP2000281694A (en) * 1999-03-29 2000-10-10 Tanaka Kikinzoku Kogyo Kk Organometallic compound for organometallic vapor phase epitaxy
JP2001122887A (en) * 1999-10-25 2001-05-08 Tanaka Kikinzoku Kogyo Kk Organometallic compound for chemical vapor deposition, method for producing the organometallic compound and method for producing thin film using the organometallic compound
JP4162366B2 (en) * 2000-03-31 2008-10-08 田中貴金属工業株式会社 CVD thin film forming process and CVD thin film manufacturing apparatus
JP5173101B2 (en) * 2000-05-15 2013-03-27 エイエスエム インターナショナル エヌ．ヴェー． Integrated circuit manufacturing method
JP4512248B2 (en) * 2000-09-26 2010-07-28 田中貴金属工業株式会社 Method for producing bis (alkylcyclopentadienyl) ruthenium and method for chemical vapor deposition of bis (alkylcyclopentadienyl) ruthenium and ruthenium thin film or ruthenium compound thin film produced by the method
JP4759126B2 (en) * 2000-10-11 2011-08-31 田中貴金属工業株式会社 Organometallic compound for chemical vapor deposition, method for producing organometallic compound for chemical vapor deposition, noble metal thin film, and chemical vapor deposition method for noble metal compound thin film
JP3598055B2 (en) * 2000-11-08 2004-12-08 田中貴金属工業株式会社 Method for producing bis (alkylcyclopentadienyl) ruthenium and method for producing bis (alkylcyclopentadienyl) ruthenium and ruthenium thin film or ruthenium compound thin film produced by the method
US20020161253A1 (en) * 2001-04-30 2002-10-31 Boulder Scientific Company Synthesis of bis (cyclopentadienyl) and bis (indenyl) ruthenium complexes
US6521772B1 (en) * 2001-09-27 2003-02-18 Praxair Technology, Inc. Synthesis of substituted ruthenocene complexes
US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions

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Publication number Priority date Publication date Assignee Title
US6207232B1 (en) * 1997-07-17 2001-03-27 Kabushikikaisha Kojundokagaku Kenkyusho Process for producing bis(alkyl-cyclopentadienyl) ruthenium complexes and process for producing ruthenium-containing films by using the same

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Title
BULLETIN DE LA SOCIETE CHIMIQUE DE FRANCE , (7-8)(PT. 2), 2413-17 CODEN: BSCFAS; ISSN: 0037-8968, 1973 *
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; ATWOOD, JIM D. ET AL: "Novel precursors for high k dielectrics and metal electrodes Part II: Deposition", XP002463780, retrieved from STN Database accession no. 140:21747 *
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; PATIN, HENRI ET AL: "Metallocenes. VIII. Clemmensen reduction of benzoylferrocene and 1,1-diacylferrocenes. Structure of the dimerization compounds", XP002463779, retrieved from STN Database accession no. 79:137262 *
HUFFMAN, J. W. ET AL: "Reactions of 2-methylchloroferrocene. Evidence for the ferrocyne intermediate", JOURNAL OF ORGANIC CHEMISTRY , 36(26), 4068-72 CODEN: JOCEAH; ISSN: 0022-3263, 1971, XP002463778 *
KAUFFMANN, THOMAS ET AL: "Multi electron ligands. XV. The reactivity of spiro[2.4]hepta-4,6-diene toward organolithium and organoelementlithium compounds", CHEMISCHE BERICHTE , 118(11), 4517-30 CODEN: CHBEAM; ISSN: 0009-2940, 1985, XP002463776 *
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Also Published As

Publication number Publication date
EP1556527A4 (en) 2011-05-25
JP4542506B2 (en) 2010-09-15
WO2004042354A3 (en) 2004-09-23
JP2006511598A (en) 2006-04-06
AU2003301873A1 (en) 2004-06-07
JP4560484B2 (en) 2010-10-13
WO2004041832A2 (en) 2004-05-21
EP1556527B1 (en) 2012-12-12
KR101150551B1 (en) 2012-07-03
JP2006519303A (en) 2006-08-24
WO2004041753A9 (en) 2004-11-25
WO2004041753A3 (en) 2004-09-02
EP1556394A2 (en) 2005-07-27
AU2003301884A1 (en) 2004-06-07
EP1556395A2 (en) 2005-07-27
AU2003301874A8 (en) 2004-06-07
JP2006504806A (en) 2006-02-09
KR20050075763A (en) 2005-07-21
WO2004041832A3 (en) 2004-09-23
KR20050074975A (en) 2005-07-19
EP1556527A2 (en) 2005-07-27
AU2003301874A1 (en) 2004-06-07
WO2004042354A2 (en) 2004-05-21
KR100997838B1 (en) 2010-12-01
EP1556395A4 (en) 2008-02-20
AU2003301873A8 (en) 2004-06-07
WO2004041753A2 (en) 2004-05-21
AU2003301884A8 (en) 2004-06-07
TW200420746A (en) 2004-10-16
KR20050084901A (en) 2005-08-29
TWI274082B (en) 2007-02-21
EP1556395B1 (en) 2018-09-12
KR100995223B1 (en) 2010-11-17
JP4538407B2 (en) 2010-09-08

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RBV Designated contracting states (corrected)

Designated state(s): DE FR GB IE IT

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Inventor name: HOOVER, CYNTHIA, A.

Inventor name: THOMPSON, DAVID, M.

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