KR101110505B1 - 종결점 탐지용 폴리싱 패드 및 관련 방법 - Google Patents
종결점 탐지용 폴리싱 패드 및 관련 방법 Download PDFInfo
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- KR101110505B1 KR101110505B1 KR1020057001276A KR20057001276A KR101110505B1 KR 101110505 B1 KR101110505 B1 KR 101110505B1 KR 1020057001276 A KR1020057001276 A KR 1020057001276A KR 20057001276 A KR20057001276 A KR 20057001276A KR 101110505 B1 KR101110505 B1 KR 101110505B1
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- polishing
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- grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/02—Backings, e.g. foils, webs, mesh fabrics
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
- G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
게다가, 배면층(20)은 존재한다면 코어(44) 및/또는 코일(46)이 함몰부(52)로 통과되도록 위치된 하나 이상의 개구(56)를 포함한다. 그러므로 코어(44) 및/또는 코일(46)은 배면층(20)을 통해 연장할 수 있다. 도 4에 도시된 것처럼, 단일의 개구(56)가 모든 함몰부(52)를 가로질러 연장할 수 있다. 그러나 도 3에 도시된 것처럼, 또 다른 실시예에서 각각의 리세스(52)와 정렬된 하나의 개구(56)가 존재한다. 그러나 소정의 폴리싱 작업에 있어서, 단일층의 폴리싱 패드만이 사용되며, 이 경우에는 배면층이 존재하지 않는다.
Claims (38)
- 연마 표면(24)과 배면 표면을 구비한 폴리싱층;상기 폴리싱층의 연마 표면(24)에 형성된 복수의 제 1 그루브(28, 28b); 및상기 폴리싱층의 배면 표면에 형성된 함몰부(indentation, 52)를 포함하며,상기 배면 표면 내의 상기 함몰부(52)에 대응하는 상기 연마 표면(24) 상의 영역은 상기 복수의 제 1 그루브(28, 28b)보다 얕은 복수의 제 2 그루브(28a)를 구비하는폴리싱 패드.
- 제 1 항에 있어서,상기 복수의 제 1 그루브(28, 28b)는 상기 배면 표면의 함몰부(52)에 대응하는 영역에서의 폴리싱 패드의 두께보다 크거나 같은 깊이를 가지는폴리싱 패드.
- 제 1 항에 있어서,상기 배면 표면 내의 상기 함몰부(52)에 대응하는 상기 연마 표면(24) 상의 영역이 불투명한폴리싱 패드.
- 제 1 항에 있어서,상기 배면 표면 내의 상기 함몰부(52)에 대응하는 상기 연마 표면(24) 상의 영역이 투명한폴리싱 패드.
- 연마 표면(24)과 배면 표면을 구비한 폴리싱층;상기 폴리싱층의 연마 표면(24)에 형성된 복수의 제 1 그루브(28, 28b); 및상기 폴리싱층의 배면 표면에 형성된 함몰부(52)를 포함하며,상기 배면 표면 내의 상기 함몰부(52)에 대응하는 상기 연마 표면(24) 상의 영역은 그루브가 없거나 상기 복수의 제 1 그루브(28, 28b)보다 얕은 복수의 제 2 그루브(28a)를 구비하고,상기 폴리싱층의 제 1 부분(60) 상에 그루브들이 형성되고, 상기 제 1 부분(60)으로부터 물리적으로 분리된 상기 폴리싱층의 제 2 부분(62) 내에 리세스가 형성되며, 상기 제 2 부분(62)은 상기 제 1 부분(60)에 고정된폴리싱 패드.
- 제 5 항에 있어서,상기 제 1 부분(60)은 불투명하고, 상기 제 2 부분(62)은 투명한폴리싱 패드.
- 제 5 항에 있어서,상기 제 1 및 제 2 부분(60, 62)은 동일한 재료 조성을 갖는폴리싱 패드.
- 제 7 항에 있어서,상기 제 2 부분(62)은 상기 연마 표면(24)과 동일 높이의 상단 표면을 갖는폴리싱 패드.
- 제 5 항에 있어서,상기 제 1 부분(60)을 관통하여 형성된 개구(64)를 더 포함하고, 상기 제 2 부분(62)은 상기 개구(64)에 고정되는폴리싱 패드.
- 제 9 항에 있어서,상기 제 2 부분(62)은 제 1 횡단면 치수를 갖는 상부 부분(70) 및 상기 제 1 횡단면 치수와 상이한 제 2 횡단면 치수를 갖는 바닥 부분(74)을 갖는폴리싱 패드.
- 제 10 항에 있어서,상기 제 1 횡단면 치수는 상기 제 2 횡단면 치수보다 작은폴리싱 패드.
- 제 5 항에 있어서,상기 폴리싱 패드는 상기 폴리싱층의 배면 표면 상에 배치된 배면층 및 상기 배면층을 관통하는 제 1 개구(56)를 더 포함하며,상기 제 1 개구(56)는 상기 폴리싱층의 배면 표면 내의 상기 함몰부(52)와 정렬되는폴리싱 패드.
- 제 5 항에 있어서,상기 폴리싱층을 관통하여 형성된 개구(80)를 더 포함하고,상기 제 2 부분(62)은 상기 개구(80) 내에 고정되며,상기 개구(80)가 제 1 횡단면 치수를 갖는 상부 섹션(82) 및 상기 제 1 횡단면 치수와 상이한 제 2 횡단면 치수를 갖는 하부 섹션(84)을 포함하는폴리싱 패드.
- 기판을 유지시키는 캐리어;플레이튼(platen) 상에 지지되는 폴리싱 패드로서, 상기 폴리싱 패드는 폴리싱용 연마 표면(24)과 배면 표면을 구비한 폴리싱층, 상기 폴리싱층의 연마 표면(24) 내에 형성된 복수의 제 1 그루브(28, 28b), 및 상기 폴리싱층의 배면 표면 내에 형성된 함몰부(52)를 포함하며, 그리고 상기 배면 표면 내의 함몰부(52)에 대응하는 상기 연마 표면(24) 상의 영역은 상기 복수의 제 1 그루브(28, 28b)보다 얕은 복수의 제 2 그루브(28a)를 갖는, 폴리싱 패드; 및상기 캐리어에 의해 유지된 상기 기판 상의 금속층의 두께를 모니터하기 위해 상기 폴리싱층의 배면 표면 내의 리세스 내에 부분적으로 또는 전체적으로 연장하는 코어 및 코일 중 하나 이상을 갖는 와전류(eddy current) 모니터링 시스템을 포함하는폴리싱 시스템.
- 폴리싱 패드의 제조 방법으로서,상기 폴리싱 패드의 폴리싱층의 제 1 부분(60)에 복수의 제 1 그루브(28, 28b)를 형성하는 단계;상기 폴리싱층의 배면 표면 내에 함몰부(52)를 형성하는 단계로서, 상기 배면 표면에 상기 함몰부(52)를 형성하는 단계는 상기 함몰부(52)를 갖는 상기 폴리싱 패드의 물리적으로 분리된 제 2 부분(62)을 제 1 부분(60)의 개구에 고정시키는 단계를 포함하는 함몰부(52)를 형성하는 단계; 및상기 배면 표면 내의 함몰부(52)에 대응하는 상기 폴리싱층의 연마 표면(24) 상의 영역을 형성하는 단계로서, 연마 표면(24) 상의 영역은 그루브가 없거나 상기 복수의 제 1 그루브(28, 28b)보다 얕은 복수의 제 2 그루브(28a)를 갖는, 폴리싱층의 연마 표면(24) 상의 영역을 형성하는 단계를 포함하는폴리싱 패드의 제조 방법.
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Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US39863202P | 2002-07-24 | 2002-07-24 | |
US60/398,632 | 2002-07-24 | ||
US10/444,921 | 2003-05-23 | ||
US10/444,921 US8485862B2 (en) | 2000-05-19 | 2003-05-23 | Polishing pad for endpoint detection and related methods |
PCT/US2003/023065 WO2004009291A1 (en) | 2002-07-24 | 2003-07-23 | Polishing pad for endpoint detection and related methods |
Publications (2)
Publication Number | Publication Date |
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KR20050025989A KR20050025989A (ko) | 2005-03-14 |
KR101110505B1 true KR101110505B1 (ko) | 2012-02-06 |
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ID=30773098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020057001276A KR101110505B1 (ko) | 2002-07-24 | 2003-07-23 | 종결점 탐지용 폴리싱 패드 및 관련 방법 |
Country Status (6)
Country | Link |
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US (6) | US8485862B2 (ko) |
JP (1) | JP4335803B2 (ko) |
KR (1) | KR101110505B1 (ko) |
CN (2) | CN100410016C (ko) |
TW (1) | TWI290081B (ko) |
WO (1) | WO2004009291A1 (ko) |
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Also Published As
Publication number | Publication date |
---|---|
US7118457B2 (en) | 2006-10-10 |
WO2004009291A1 (en) | 2004-01-29 |
TWI290081B (en) | 2007-11-21 |
US20150004888A1 (en) | 2015-01-01 |
CN101310929A (zh) | 2008-11-26 |
US20070077862A1 (en) | 2007-04-05 |
US8858298B2 (en) | 2014-10-14 |
US9333621B2 (en) | 2016-05-10 |
JP4335803B2 (ja) | 2009-09-30 |
CN101310929B (zh) | 2010-06-23 |
JP2005533667A (ja) | 2005-11-10 |
US20030236055A1 (en) | 2003-12-25 |
KR20050025989A (ko) | 2005-03-14 |
CN1681622A (zh) | 2005-10-12 |
TW200403129A (en) | 2004-03-01 |
US7429207B2 (en) | 2008-09-30 |
CN100410016C (zh) | 2008-08-13 |
US20130231032A1 (en) | 2013-09-05 |
US20050124273A1 (en) | 2005-06-09 |
US8485862B2 (en) | 2013-07-16 |
US20130295826A1 (en) | 2013-11-07 |
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