CN101310929A - 抛光衬垫、制造抛光衬垫的方法以及抛光系统和抛光方法 - Google Patents
抛光衬垫、制造抛光衬垫的方法以及抛光系统和抛光方法 Download PDFInfo
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Abstract
本发明提供用于化学机械抛光的抛光衬垫、其制造方法以及抛光系统和抛光方法,所述抛光衬垫包括:具有抛光面和底面的抛光层;形成于所述抛光面中的第一组沟槽;及形成于所述底面中的凹槽,其中在所述抛光面上对应于所述底面中凹槽的区域有比所述第一组沟槽浅的第二组沟槽。所述抛光系统包括:用于固定衬底的托架;支撑于机床工作台上的抛光衬垫,该抛光衬垫包括抛光层,该抛光层具有用于抛光的前表面和底面、形成于所述前表面上的第一组沟槽及形成于所述底面中的凹槽,且其中在所述抛光面上的一区域有比所述第一组沟槽浅的第二组沟槽;及一涡流监控系统,其至少具有线圈和磁芯的其中之一,以监控由所述托架固定的所述衬底上的金属层。
Description
本申请是2003年7月23日提交的名称为:“抛光衬垫、制造抛光衬垫的方法以及抛光系统和抛光方法”的中国专利申请03822308.2的分案申请。
技术领域
本发明涉及在化学机械抛光过程中使用的抛光衬垫以及用来监控抛光过程的方法和设备。
背景技术
集成电路典型地是通过将导电层、半导电层或绝缘层按顺序沉积到硅晶片上,而被加工形成于衬底之上的。其中一个生产步骤包括将填料层沉积到非平面(non-planar)表面上,并磨平填料层直到露出非平面表面为止。例如,可将导电填料层沉积到一图案化的绝缘层上以填充该绝缘层上的沟槽和开口。然后将填料层抛光,直到露出绝缘层上凸起的图案为止。在磨平(planarization)之后,遗留在绝缘层上的凸起图案之间的导电层部分便形成了通开口(vias)、插头(plugs)、线路,提供在衬底上的薄膜回路之间的导电路径。此外,平面化需要将衬底表面磨平以利于对其使用光刻法。
化学机械抛光(CMP)是一种可采用的磨平方法。此种磨平方法的特色是需要将衬底固定在托架或抛光头上。衬底所露出的表面紧贴在旋转的盘状抛光衬垫或带形抛光衬垫上。抛光衬垫可以是“标准”衬垫或固定研磨垫(fixed abrasive pad)。标准衬垫有耐磨粗糙表面,而固定研磨垫则是将研磨微粒固定在一种容纳介质(containment media)中。托架头向衬底施加一定可控载荷,从而使其紧贴在抛光衬垫上。抛光液被提供到抛光衬垫的表面,如果使用标准衬垫,则抛光研磨浆至少含有一种化学反应剂和研磨微粒。
化学机械抛光的一个问题是,如何确定抛光过程是否完成,即衬背衬层是否已被磨至所需的平面度或厚度,或是确定在何时已除去了所要求的一定材料量。导电层或膜的抛光过度(去除过多)可导致电路电阻增加。另一方面,导电层或膜的抛光不足(去除过少)可导致短路。衬背衬层的初始厚度不同、抛光液的成份不同、抛光衬垫的条件不同、抛光衬垫和衬底之间的相对速度不同、及衬底上的载荷不同均可导致材料去除速率的不同。这些差异导致了达到抛光终点(polishing endpoint)所需时间也不同。因此,抛光终点不能仅根据抛光时间来确定。
一种确定抛光终点的方法是在加工现场监控衬底的抛光,例如借助于光学或电子传感器。一种监控技术是用磁场在金属层中感应出涡流,并探测当金属层被去除时磁通量产生的变化。简单地说,涡流产生的磁通量与励磁磁通线方向相反。该磁通量与涡流成比例,而涡流与金属层的电阻成比例,金属层的电阻又与金属层的厚度成比例。因此,金属层厚度的变化可导致涡流所产生的磁通量的变化。磁通量的这一变化导致主线圈中电流的变化,而电流的变化可作为阻抗的变化来测量。因此,线圈阻抗的变化反映了金属层厚度的变化。
发明内容
一方面,本发明涉及一种抛光衬垫。该抛光衬垫包括一抛光层,该抛光层具有用来抛光的前表面及底面。在抛光层的前表面上形成有第一组(first plurality)沟槽,而在其底面上则形成有一个凹槽。抛光面上对应于底面上凹槽的区域没有沟槽,或是有比第一组沟槽浅的第二组(second plurality)沟槽。
本发明的实施方案可包括一个或多个如下特征:抛光面上对应于凹槽的区域可以大体上是平的,例如其可以没有沟槽。或者,抛光面上对应于凹槽的区域可以有第二组沟槽。此外,此区域可以是不透明的或透明的。抛光层也可以是单元式结构。在抛光层的第二部分上可形成空腔,该第二部分与第一部分实体上分离并可固定于第一部分上。第一和第二部分可以由大体上相同的材料构成,且第二部分的顶面可与抛光面大体上齐平。可在第一部分上形成一开口,并将第二部分固定于该开口中。第二部分可以具有顶部和底部,顶部具有第一横截面尺寸,底部具有不同的第二横截面尺寸。例如,第一横截面尺寸可以小于第二横截面尺寸。第二组沟槽可以延伸到凹槽的内表面之外。
衬垫可有一个位于抛光层的底面上的背衬层。背衬层可以比抛光层柔软。背衬层可有一个穿通的开口,而且该开口可与抛光层底面上的凹槽对准。背衬层可以是较薄的不可压缩层。第一组沟槽可以形成于抛光层的第一部分,而空腔可以形成于抛光层的第二部分,其中第二部分可与第一部分实体上分离。在抛光层上可形成第二开口,且第二部分可固定于第二开口之中。第一开口可以具有第一横截面尺寸,且第二开口可以具有不同(如更大或更小)的第二、横截面尺寸。
另一方面,本发明涉及一种抛光系统。该抛光系统包括用来固定衬底的托架、被支撑于机床工作台上的抛光衬垫、及涡流监控系统。抛光衬垫包括抛光层(此抛光层具有用来抛光的前表面及底面)、在抛光层前表面中形成的第一组沟槽、在抛光层底面中形成的凹槽。抛光面上对应于底面中凹槽的区域没有沟槽,或是有比第一组沟槽浅的第二组沟槽。涡流监控系统至少具有线圈和磁芯的其中之一,上述线圈和磁芯的其中之一至少部分地延伸到抛光层的底面中的空腔之内,以监控被托架所固定的衬底上的金属层。
另一方面,本发明涉及一种制造抛光衬垫的方法。该方法包括在抛光衬垫的抛光层形成第一组沟槽、在抛光层的底面形成凹槽、及在抛光面上形成一个对应于底面凹槽的区域,此区域没有沟槽,或是有比第一组沟槽浅的第二组沟槽。
本发明的实施方案可包括一个或多个下列特征:可将抛光层固定到背衬层上。形成空腔包括机械加工这个空腔或是模制该空腔。在底面上形成凹槽,可包括将实体上分立的抛光衬垫的第一部分固定于抛光衬垫的第二部分中的开口内,其中抛光衬垫的第一部分具有凹槽,抛光衬垫的第二部分具有沟槽。
另一方面,本发明涉及一种抛光方法。在该方法中,使衬底与抛光衬垫的抛光层的前表面相接触,抛光层具有形成于抛光层的前表面的第一部分中的第一组沟槽和形成于抛光层的底面上的凹槽。在抛光面对应于底面上的凹槽的区域内没有沟槽,或是有比第一组沟槽浅的第二组沟槽。将抛光液供给到抛光层的前表面,且使得衬底和前表面之间产生相对运动。
本发明的实施方案可包括一个或多个下列特征:可通过涡流监控系统来监控衬底上的金属层,该涡流监控系统至少具有线圈和磁芯的其中之一,上述线圈和磁芯的其中之一至少部分地延伸到抛光层的底面中的空腔内。
另一方面,本发明涉及一种具有抛光层的抛光衬垫,该抛光层具有前表面和底面。前表面包括具有第一组沟槽的第一部分以及大体上平坦的第二部分,而底面则具有与前表面的第二部分对准的空腔。
本发明的一个或多个实施例的细节将在下面通过附图和描述来阐明。本发明的其他特征、目的和优点将通过描述和附图以及权利要求体现出来。
附图说明
图1为一个具有涡流监控系统的化学机械抛光工作台的示意性侧视(半剖)图。
图2为示意性俯视图,展示了图1中的抛光衬垫。
图3为示意性侧面剖视图,沿图2中线3-3方向展示抛光衬垫。
图4为示意性侧面剖视图,展示一种在覆盖层的底面上有多个凹槽的抛光衬垫。
图5为示意性侧面剖视图,展示一种抛光衬垫,其中一个无沟槽嵌入块被嵌入到一个有沟槽抛光衬垫上。
图6为抛光衬垫的另一实施方案的示意性侧剖视图,其中背衬层是一个薄层区域。
图7A和7B为抛光衬垫的又一实施方案的示意性侧剖视图,其中一个嵌入块被嵌入到覆盖层的底面。
图8为示意性侧剖视图,展示了一个在空腔上方有浅沟槽的抛光衬垫。
在各附图中,相同的参考符号代表相同的部件。
具体实施方式
参考图1,可在一台化学机械抛光设备的抛光工作台10上对一个或多个衬底14进行抛光。一种相应抛光设备的描述可在美国第5738574号专利中找到。
抛光工作站10包括安装有抛光衬垫18的可旋转机床工作台16。抛光衬垫18可以是双层抛光衬垫,具有柔软的背衬层20和结构大致均匀的坚硬耐用的外层22。耐用外层22提供了抛光面24。至少有一部分抛光面24上可以有沟槽28,用来输送抛光液。抛光工作台还可包括用来保持抛光衬垫工况的衬垫调节装置,以使之有效地对衬底进行抛光。
在抛光步骤中,包含液体和pH调节剂的抛光液30可通过抛光液供给喷口或组合抛光液/冲洗臂32而被送到抛光衬垫18的表面。抛光液30还可包含研磨剂微粒。
衬底12由托架头34固定贴靠到抛光衬垫18上。托架头34悬挂在支撑结构如圆盘传送带(carousel)上,并通过托架驱动轴36连接到托架头旋转马达上,因此托架头便可绕轴线38旋转。
空腔40形成于机床工作台16中,在空腔40中安装了现场监控模块42。现场监控模块42可包括一个现场涡流监控系统,其中磁芯44被置于空腔26中随机床工作台旋转。驱动和检测线圈46是在磁芯44上绕制的,并且连接到控制器50。在操作中,一振荡器激励驱动线圈而产生振荡磁场48,此磁场贯穿磁芯44的主体。至少一部分磁场48朝向衬底12穿过抛光衬垫18。如果衬底10上有金属层,那么振动磁场48将产生涡流。涡流将在与感应磁场相反的方向上产生一定磁通量,并且这一磁通量在初级或检测线圈中感应出与驱动电流方向相反的反向电流。电流中所产生的变化可被当作磁芯阻抗中的变化来测量。当金属层的厚度变化时,金属层的电阻也变化。因此,涡流以及涡流所感应出的磁通量的强度也变化,从而导致初级线圈阻抗的变化。通过监控这些变化,例如根据驱动线圈电流的相位来测量线圈电流的幅值或线圈电流的相位,涡流传感监控器就可以探测到金属层的厚度的变化。
用于涡流监控系统的驱动系统和检测系统将不进行详细描述,因为适当系统的描述可在欧洲公布第EP1294534号和PCT公布第WO20/087825号中找到。
涡流监控系统的多个电子元件可被设置在控制器50中的印制电路板上。控制器可包含完整电路(circuity),例如一个通用微处理机或一个专用集成电路,以将涡流检测系统的信号转化为数字数据。
如前所述,监控系统42包括位于空腔26内的磁芯44。
参考图2和图3,抛光衬垫18的覆盖层22包括一个或多个在覆盖层的底面上形成的空腔或称凹槽52。这些凹槽在抛光衬垫的覆盖层中产生出一个或多个薄层区域54。磁芯44和/或线圈46可伸入到凹槽52之内,因此它们部分地穿入抛光衬垫。通过将磁芯和线圈放置在衬底附近,可提高涡流监控系统的空间分辨率。这些空腔52可至少延伸穿过覆盖层22厚度的50%,例如穿过75~80%。举例来说,一个抛光衬垫所具有的覆盖层22的厚度为100密耳,则凹槽52可具有的深度D1约为80密耳,从而剩下的薄层区域54的厚度约为20密耳。
如前所述,覆盖层22也可包括在该层中形成的多条沟槽28。这些沟槽可以是任意图案,如同心圆形、直线形、螺旋形等。然而,沟槽不延伸到覆盖层22中的薄层区域54上。因此,抛光衬垫的抛光面24既包括有沟槽部分又包括没有沟槽的部分,且凹槽位于上述部分中一个没有沟槽的部分。沟槽28可以至少为10密耳深,例如约为20密耳深。沟槽28可延伸至覆盖层22厚度的大约20~25%处。例如,在具有80密耳厚的覆盖层22的抛光衬垫中,沟槽28的深度D2可约为20密耳。沟槽的深度可以深至足以延伸到或超过由空腔的内表面58所限定的平面。
此外,如存在背衬层20,则背衬层20包括一个或多个开口56,以此为磁芯44和/或线圈46提供到达凹槽52的入口。因此,磁芯44和/或线圈46也可延伸穿过背衬层20。如图2所示,单一一个开口52可以延展超过所有这些凹槽52。然而,如图4所示,在另一实施方案中,一个开口56与每个凹槽52对准。然而,对于某些抛光操作,只使用单层抛光衬垫,而且没有背衬层。
参考图1和图4,当抛光衬垫18被固定到机床工作台上时,薄层区域54覆盖空腔26以及磁芯和/或线圈的高于机床工作台16顶面的部分。通过将磁芯42设置得靠近衬底,便使磁场扩散得较少从而可改善空间分辨率。如果抛光衬垫不与光学终点监控系统一同使用,则整个抛光层包括覆盖空腔的部分可以是不透明的。
在一个实施方案中(示于图3),覆盖层22可例如使用模制工艺来制造,在覆盖层的上表面和下表面中分别形成沟槽和空腔。因此,覆盖层22,包括沟槽部分和薄层区域,可以是一个单元体。覆盖层22可通过模制工艺,例如通过喷射铸造法或压力铸造法来制造,使得衬垫材料在模具中固化或称硬化,而令形成沟槽的空腔凹下。或者,覆盖层22可通过更加传统的技术,例如通过从材料块上切下衬垫薄块来制造。沟槽和空腔可随后通过分别对覆盖层的顶面和底面进行机械加工或铣削加工来形成。一旦覆盖层22加工完成,就可将其通过例如粘接等方法来固定到背衬层20上,且覆盖层22上的空腔52与背衬层20上的开口56相对齐。
或者,如图5所示,抛光衬垫可分成两部分制造。例如,衬垫的主体60可被制造成具有沟槽28(通过模制或机械加工)。在其底面上具有空腔52的无沟槽嵌入块62可单独制造。主体60和嵌入块62可用同一种材料制作。在覆盖层22的主体60中开出开口64,并且例如通过将嵌入块64粘接在背衬层20的上表面的粘接剂,来使嵌入块64固定在开口64中。嵌入块62的厚度D4可以等于覆盖层22的厚度D3,从而使嵌入块62的顶面相对于抛光面24齐平,或者可令嵌入块62的厚度D4略小于覆盖层22的厚度D3,而使得嵌入块62的顶面相对于抛光面24稍低。
在另一实施方案中,如图6所示,背衬层20为一种不可压缩且抗剪切的材料如聚脂薄膜(此实施方案可被认为起到单层抛光衬垫的作用)的薄片。聚脂薄膜片可贴在覆盖层22的背面,然后嵌入块62可被放置于覆盖层22的开口64中并被粘接固定到聚脂薄膜片20的顶面。然后除去一部分聚脂薄膜片以露出空腔52。
在另一实施方案中,如图7A所示,嵌入块62固定于覆盖层22的下部。在这一实施方案中,嵌入块62包括适合穿入覆盖层22上的开口72内的狭窄顶部70,以及适合穿入背衬层20上的开口76内的宽大底部74。宽大底部74的顶面78可被粘接固定到一部分覆盖层22的底面79上,其中该部分覆盖层22突出于背衬层20之外。顶部70可具有与覆盖层22相同的厚度,因此使嵌入块的顶面与抛光面24齐平,而底部74可以比背衬层20稍薄,以便在机床工作台和嵌入块之间留出缝隙。
参考图7B,也可将一个双体式嵌入块固定于一个单层抛光衬垫上。在这一实施方案中,在覆盖层22上形成有一个双体式的开口80,该开口80具有横截面尺寸不同的上部82和下部84。如果覆盖层和嵌入块具有相同硬度,则底部74可以具有与开口的下部84相同的厚度。
参考图8,在另一实施方案中,抛光面24的对应于空腔52的部分,亦即薄层区域54,可以有非常浅的沟槽28a,而抛光面的其他部分则可以有深沟槽28b。深沟槽28b的深度可以至少为10密耳,例如约20密耳深。相反,浅沟槽28a的深度必须小于薄层区域54的厚度(例如小于25%)。例如,如果薄层区域52所具有的厚度约为20密耳,则浅沟槽28a可以具有的深度约为5密耳。
所述涡流监控系统可被用在多种抛光系统中。抛光衬垫,或托架头,或是这两者均能够移动而在抛光面和衬底之间产生相对运动。抛光衬垫可以是固定在机床工作台上的圆形(或某种其他形状)的衬垫、在伸展于馈送装置和拉紧装置之间的抛光带(tape)、或连续式抛光皮带(belt)。抛光衬垫可以固定在机床工作台上、在抛光操作之间递增式地前进通过机床工作台,或者是在抛光过程中被持续地驱动通过机床工作台。衬垫可在抛光过程中固定于机床工作台之上,或者是在抛光过程中,在机床工作台与抛光衬垫之间可设有液压轴承。抛光衬垫可以是标准的(例如有或没有填充物的聚亚安酯)粗糙衬垫、软衬垫或固定研磨垫。
此外,虽然使用了垂直定位的术语,但应理解的是抛光面和衬底可以是在垂直方向或某一其他方向上颠倒放置的。
所述涡流监控系统可以包括独立的驱动和检测线圈,或单一的组合式驱动兼检测线圈。在单一线圈系统中,振荡器和检测电容器(及其他传感器电路)被连接到同一线圈。
虽然已描述了许多本发明的实施例。但是应理解,在未超出本发明的构思和范围的前提下,尚可对其进行各种改动。因此,其他实施例也在如下权利要求范围之内。
Claims (7)
1.一种抛光衬垫,包括:
一抛光层,其具有抛光面和底面;
第一组沟槽,其形成于所述抛光层的前表面;及
一凹槽,其形成于所述抛光层的底面上,且其中在所述抛光面上对应于所述底面中凹槽的区域没有沟槽,或是只有比所述第一组沟槽浅的第二组沟槽。
2.如权利要求1所述的抛光衬垫,其中在所述抛光面上对应于所述底面中凹槽的区域没有沟槽。
3.如权利要求2所述的抛光衬垫,其中在所述抛光面上对应于所述底面中凹槽的区域大体上是平的。
4.一种抛光系统,包括:
一托架,用于固定衬底;
一抛光衬垫,其被支撑于机床工作台上,该抛光衬垫包括一抛光层,该抛光层具有一用于抛光的前表面和一底面、形成于所述抛光层的前表面上的第一组沟槽、及形成于所述抛光层的底面上的凹槽,且其中在所述抛光面上对应于所述底面中凹槽的区域没有沟槽,或是只有比第一组沟槽浅的第二组沟槽;及
一涡流监控系统,其至少具有线圈和磁芯的其中之一,且所述线圈和磁芯的其中之一至少部分地延伸到所述抛光层的底面中的空腔内,以监控由所述托架固定的所述衬底上的金属层。
5.如权利要求4所述的抛光系统,其中在所述抛光面上对应于所述底面中凹槽的区域没有沟槽。
6.一种抛光方法,包括:
使衬底与一抛光衬垫的抛光层的前表面相接触,所述抛光层具有形成于该抛光层的前表面的第一组沟槽、及形成于该抛光层的底面中的一凹槽,而且其中所述抛光面上对应于所述底面中凹槽的区域没有沟槽,或只有比第一组沟槽浅的第二组沟槽;
将抛光液提供到所述抛光层的前表面;及
使得所述衬底和所述前表面之间产生相对运动。
7.如权利要求6所述的方法,其中所述抛光面的所述区域没有沟槽。
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- 2003-07-23 CN CN2008101292340A patent/CN101310929B/zh not_active Expired - Fee Related
- 2003-07-23 CN CNB038223082A patent/CN100410016C/zh not_active Expired - Fee Related
- 2003-07-23 KR KR1020057001276A patent/KR101110505B1/ko active IP Right Grant
- 2003-07-23 WO PCT/US2003/023065 patent/WO2004009291A1/en active Application Filing
- 2003-07-23 TW TW092120151A patent/TWI290081B/zh not_active IP Right Cessation
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CN113478382A (zh) * | 2021-07-20 | 2021-10-08 | 湖北鼎汇微电子材料有限公司 | 检测窗口、化学机械抛光垫及抛光系统 |
CN113478382B (zh) * | 2021-07-20 | 2022-11-04 | 湖北鼎汇微电子材料有限公司 | 检测窗口、化学机械抛光垫及抛光系统 |
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US9333621B2 (en) | 2016-05-10 |
US20050124273A1 (en) | 2005-06-09 |
KR101110505B1 (ko) | 2012-02-06 |
US20130295826A1 (en) | 2013-11-07 |
US7118457B2 (en) | 2006-10-10 |
US20150004888A1 (en) | 2015-01-01 |
US20130231032A1 (en) | 2013-09-05 |
US20070077862A1 (en) | 2007-04-05 |
US20030236055A1 (en) | 2003-12-25 |
US8485862B2 (en) | 2013-07-16 |
KR20050025989A (ko) | 2005-03-14 |
US7429207B2 (en) | 2008-09-30 |
TWI290081B (en) | 2007-11-21 |
CN100410016C (zh) | 2008-08-13 |
TW200403129A (en) | 2004-03-01 |
CN1681622A (zh) | 2005-10-12 |
US8858298B2 (en) | 2014-10-14 |
WO2004009291A1 (en) | 2004-01-29 |
JP4335803B2 (ja) | 2009-09-30 |
CN101310929B (zh) | 2010-06-23 |
JP2005533667A (ja) | 2005-11-10 |
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