KR101087821B1 - 반도체 발광소자 기판의 제조방법 - Google Patents
반도체 발광소자 기판의 제조방법 Download PDFInfo
- Publication number
- KR101087821B1 KR101087821B1 KR1020117003108A KR20117003108A KR101087821B1 KR 101087821 B1 KR101087821 B1 KR 101087821B1 KR 1020117003108 A KR1020117003108 A KR 1020117003108A KR 20117003108 A KR20117003108 A KR 20117003108A KR 101087821 B1 KR101087821 B1 KR 101087821B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- cooling
- holding
- temperature
- vacuum chamber
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 91
- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 475
- 238000001816 cooling Methods 0.000 claims abstract description 226
- 238000010438 heat treatment Methods 0.000 claims abstract description 56
- 238000004140 cleaning Methods 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 150000002500 ions Chemical class 0.000 claims description 55
- 238000001704 evaporation Methods 0.000 claims description 41
- 230000008020 evaporation Effects 0.000 claims description 39
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 57
- 239000010408 film Substances 0.000 description 49
- 239000003507 refrigerant Substances 0.000 description 45
- 230000015572 biosynthetic process Effects 0.000 description 22
- 238000007740 vapor deposition Methods 0.000 description 22
- 239000007789 gas Substances 0.000 description 19
- 230000008021 deposition Effects 0.000 description 16
- 239000002826 coolant Substances 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 238000010257 thawing Methods 0.000 description 13
- 238000010884 ion-beam technique Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/057435 WO2011135667A1 (ja) | 2010-04-27 | 2010-04-27 | 半導体発光素子基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110125629A KR20110125629A (ko) | 2011-11-21 |
KR101087821B1 true KR101087821B1 (ko) | 2011-11-30 |
Family
ID=44193868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020117003108A KR101087821B1 (ko) | 2010-04-27 | 2010-04-27 | 반도체 발광소자 기판의 제조방법 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP4684372B1 (zh) |
KR (1) | KR101087821B1 (zh) |
CN (1) | CN102439195B (zh) |
HK (1) | HK1168392A1 (zh) |
TW (1) | TW201138139A (zh) |
WO (1) | WO2011135667A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140050850A1 (en) * | 2011-11-15 | 2014-02-20 | Panasonic Corporation | Vacuum apparatus, method for cooling heat source in vacuum, and thin film manufacturing method |
WO2013099064A1 (ja) * | 2011-12-28 | 2013-07-04 | キヤノンアネルバ株式会社 | 真空処理装置 |
US9869013B2 (en) | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
WO2017070488A1 (en) * | 2015-10-22 | 2017-04-27 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
JP6524904B2 (ja) | 2015-12-22 | 2019-06-05 | 日亜化学工業株式会社 | 発光装置 |
JP6588418B2 (ja) | 2016-12-07 | 2019-10-09 | 株式会社神戸製鋼所 | 成膜装置およびそれを用いた成膜物の製造方法、ならびに冷却パネル |
JP2020007587A (ja) * | 2018-07-04 | 2020-01-16 | 株式会社アルバック | 蒸着装置、および、蒸着方法 |
JP7316877B2 (ja) * | 2019-08-19 | 2023-07-28 | 株式会社オプトラン | 真空プロセス装置および真空プロセス装置におけるプロセス対象物の冷却方法 |
WO2021188754A1 (en) * | 2020-03-18 | 2021-09-23 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06347620A (ja) * | 1993-06-11 | 1994-12-22 | Canon Inc | レプリカミラーの製造方法および製造用型 |
JP3787410B2 (ja) * | 1997-05-13 | 2006-06-21 | キヤノン株式会社 | 堆積膜製造方法及び光起電力素子の製造方法 |
JPH11149005A (ja) * | 1997-11-14 | 1999-06-02 | Canon Inc | 内面反射ミラーおよびその製造方法 |
JP4545504B2 (ja) * | 2004-07-15 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 膜形成方法、発光装置の作製方法 |
JP4780983B2 (ja) * | 2005-03-17 | 2011-09-28 | 株式会社アルバック | 有機el素子製造方法 |
JP4873455B2 (ja) * | 2006-03-16 | 2012-02-08 | 株式会社シンクロン | 光学薄膜形成方法および装置 |
JP4597149B2 (ja) * | 2007-01-26 | 2010-12-15 | 株式会社シンクロン | 薄膜形成装置及び薄膜形成方法 |
JP2009013435A (ja) * | 2007-06-29 | 2009-01-22 | Fujifilm Corp | 基板ホルダ及び真空成膜装置 |
JP4941197B2 (ja) * | 2007-09-25 | 2012-05-30 | 三菱電機株式会社 | 半導体デバイスの成膜用ホルダ及び成膜用装置 |
CN101197417B (zh) * | 2008-01-07 | 2010-09-15 | 普光科技(广州)有限公司 | 氮化镓基发光二极管芯片及其制作方法 |
-
2010
- 2010-04-27 WO PCT/JP2010/057435 patent/WO2011135667A1/ja active Application Filing
- 2010-04-27 KR KR1020117003108A patent/KR101087821B1/ko active IP Right Grant
- 2010-04-27 JP JP2010535564A patent/JP4684372B1/ja active Active
- 2010-04-27 CN CN201080002384.0A patent/CN102439195B/zh active Active
- 2010-05-13 TW TW099115220A patent/TW201138139A/zh unknown
-
2012
- 2012-09-17 HK HK12109087.1A patent/HK1168392A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102439195A (zh) | 2012-05-02 |
JPWO2011135667A1 (ja) | 2013-07-18 |
WO2011135667A1 (ja) | 2011-11-03 |
CN102439195B (zh) | 2014-09-03 |
JP4684372B1 (ja) | 2011-05-18 |
KR20110125629A (ko) | 2011-11-21 |
HK1168392A1 (zh) | 2012-12-28 |
TWI355093B (zh) | 2011-12-21 |
TW201138139A (en) | 2011-11-01 |
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