KR101081055B1 - 발광소자 패키지 및 그 제조방법 - Google Patents

발광소자 패키지 및 그 제조방법 Download PDF

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Publication number
KR101081055B1
KR101081055B1 KR1020090067782A KR20090067782A KR101081055B1 KR 101081055 B1 KR101081055 B1 KR 101081055B1 KR 1020090067782 A KR1020090067782 A KR 1020090067782A KR 20090067782 A KR20090067782 A KR 20090067782A KR 101081055 B1 KR101081055 B1 KR 101081055B1
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KR
South Korea
Prior art keywords
light emitting
substrate
emitting device
groove
layer
Prior art date
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Expired - Fee Related
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KR1020090067782A
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English (en)
Korean (ko)
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KR20110010296A (ko
Inventor
김태윤
Original Assignee
엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020090067782A priority Critical patent/KR101081055B1/ko
Priority to EP10169315.8A priority patent/EP2278633B1/en
Priority to US12/837,094 priority patent/US8659046B2/en
Priority to JP2010160366A priority patent/JP5739118B2/ja
Priority to TW099123496A priority patent/TWI513062B/zh
Priority to CN201010233464.9A priority patent/CN101964388B/zh
Publication of KR20110010296A publication Critical patent/KR20110010296A/ko
Application granted granted Critical
Publication of KR101081055B1 publication Critical patent/KR101081055B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020090067782A 2009-07-24 2009-07-24 발광소자 패키지 및 그 제조방법 Expired - Fee Related KR101081055B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020090067782A KR101081055B1 (ko) 2009-07-24 2009-07-24 발광소자 패키지 및 그 제조방법
EP10169315.8A EP2278633B1 (en) 2009-07-24 2010-07-12 Light emitting device package and method for fabricating the same
JP2010160366A JP5739118B2 (ja) 2009-07-24 2010-07-15 発光素子パッケージ及びその製造方法
US12/837,094 US8659046B2 (en) 2009-07-24 2010-07-15 Light emitting device package and method for fabricating the same
TW099123496A TWI513062B (zh) 2009-07-24 2010-07-16 發光元件封裝結構及其製造方法
CN201010233464.9A CN101964388B (zh) 2009-07-24 2010-07-19 发光器件封装及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090067782A KR101081055B1 (ko) 2009-07-24 2009-07-24 발광소자 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20110010296A KR20110010296A (ko) 2011-02-01
KR101081055B1 true KR101081055B1 (ko) 2011-11-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090067782A Expired - Fee Related KR101081055B1 (ko) 2009-07-24 2009-07-24 발광소자 패키지 및 그 제조방법

Country Status (6)

Country Link
US (1) US8659046B2 (https=)
EP (1) EP2278633B1 (https=)
JP (1) JP5739118B2 (https=)
KR (1) KR101081055B1 (https=)
CN (1) CN101964388B (https=)
TW (1) TWI513062B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969433A (zh) * 2012-12-06 2013-03-13 上海顿格电子贸易有限公司 Led晶片模组化封装工艺
KR102008315B1 (ko) * 2013-01-23 2019-10-21 삼성전자주식회사 발광 소자 패키지
JP6294113B2 (ja) * 2014-03-17 2018-03-14 新光電気工業株式会社 キャップ及びその製造方法、半導体装置及びその製造方法
CN114038967B (zh) * 2021-07-27 2023-05-16 重庆康佳光电技术研究院有限公司 Led外延结构及其制造方法、led器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100813070B1 (ko) * 2006-09-29 2008-03-14 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법

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JPH07106702A (ja) * 1993-10-05 1995-04-21 Hitachi Ltd 受発光装置の製造方法
JPH0983015A (ja) * 1995-09-20 1997-03-28 Oki Electric Ind Co Ltd モノリシック発光ダイオードアレイの製造方法
JPH09249499A (ja) * 1996-03-15 1997-09-22 Matsushita Electron Corp Ｉｉｉ族窒化物半導体のエピタキシャル成長方法
JPH10173236A (ja) * 1996-12-13 1998-06-26 Sharp Corp 窒化ガリウム系化合物半導体発光素子の製造方法
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
JP4277583B2 (ja) * 2003-05-27 2009-06-10 パナソニック電工株式会社 半導体発光装置
JP3976723B2 (ja) * 2003-10-30 2007-09-19 三洋電機株式会社 半導体素子およびその製造方法
JP4572312B2 (ja) * 2004-02-23 2010-11-04 スタンレー電気株式会社 Ｌｅｄ及びその製造方法
KR20060037638A (ko) 2004-10-28 2006-05-03 엘지이노텍 주식회사 실리콘 기판을 이용한 질화물 반도체 발광소자 및 그제조방법
JP2006237141A (ja) * 2005-02-23 2006-09-07 Stanley Electric Co Ltd サブマウント型ｌｅｄ
JP2006253288A (ja) * 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd 発光装置及びその製造方法
KR100746783B1 (ko) * 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
JP4830768B2 (ja) * 2006-05-10 2011-12-07 日亜化学工業株式会社 半導体発光装置及び半導体発光装置の製造方法
JP5148849B2 (ja) * 2006-07-27 2013-02-20 スタンレー電気株式会社 Ｌｅｄパッケージ、それを用いた発光装置およびｌｅｄパッケージの製造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
KR100850945B1 (ko) 2006-11-08 2008-08-08 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
JP4836769B2 (ja) * 2006-12-18 2011-12-14 スタンレー電気株式会社 半導体発光装置およびその製造方法
KR100851183B1 (ko) * 2006-12-27 2008-08-08 엘지이노텍 주식회사 반도체 발광소자 패키지
JP4907476B2 (ja) * 2007-03-13 2012-03-28 コバレントマテリアル株式会社 窒化物半導体単結晶
KR100896282B1 (ko) * 2007-11-01 2009-05-08 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
KR100891800B1 (ko) * 2007-11-23 2009-04-07 삼성전기주식회사 발광소자 어레이 제조방법 및 발광소자 어레이
JP5258285B2 (ja) * 2007-12-28 2013-08-07 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子
KR101114592B1 (ko) * 2009-02-17 2012-03-09 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법

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KR100813070B1 (ko) * 2006-09-29 2008-03-14 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법

Also Published As

Publication number Publication date
JP5739118B2 (ja) 2015-06-24
CN101964388B (zh) 2016-05-04
US20110018021A1 (en) 2011-01-27
KR20110010296A (ko) 2011-02-01
CN101964388A (zh) 2011-02-02
EP2278633B1 (en) 2019-05-08
JP2011029640A (ja) 2011-02-10
EP2278633A2 (en) 2011-01-26
TWI513062B (zh) 2015-12-11
US8659046B2 (en) 2014-02-25
EP2278633A3 (en) 2015-12-02
TW201110428A (en) 2011-03-16

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