KR101063914B1 - 탄화규소에 내열금속카바이드를 오믹 접촉 형성시키는 방법및 이를 이용한 전력용 반도체 소자 - Google Patents
탄화규소에 내열금속카바이드를 오믹 접촉 형성시키는 방법및 이를 이용한 전력용 반도체 소자 Download PDFInfo
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- KR101063914B1 KR101063914B1 KR1020080077993A KR20080077993A KR101063914B1 KR 101063914 B1 KR101063914 B1 KR 101063914B1 KR 1020080077993 A KR1020080077993 A KR 1020080077993A KR 20080077993 A KR20080077993 A KR 20080077993A KR 101063914 B1 KR101063914 B1 KR 101063914B1
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- Prior art keywords
- heat
- carbide
- resistant metal
- layer
- forming
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000003763 carbonization Methods 0.000 title claims abstract description 8
- 239000003870 refractory metal Substances 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 238000000151 deposition Methods 0.000 abstract description 11
- 229910021332 silicide Inorganic materials 0.000 abstract description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (5)
- 포토레지스터(110)를 탄화규소 기판(100) 상층에 도포하고 열처리하여 탄화층(111)을 형성시키는 제1단계와;상기 탄화층(111) 상부에 오믹 접촉 형성이 필요한 부분에 대해 선택적으로 내열금속막(120)을 형성하는 제2단계와;상기 내열금속막(120)과 탄화층(111)의 탄소를 반응시켜 내열금속카바이드층(121)을 형성하는 제3단계와;상기 내열금속카바이드층(121)을 형성하고 남아있는 탄화층(111)을 제거하는 제4단계;를 포함하여 이루어지는 것을 특징으로 하는 탄화규소에 내열금속카바이드를 오믹 접촉 형성시키는 방법.
- 삭제
- 제 1항에 있어서, 상기 열처리는 900℃ 이상에서 10분~30분 동안 수행하는 것을 특징으로 하는 탄화규소에 내열금속카바이드를 오믹 접촉 형성시키는 방법.
- 삭제
- 삭제
Priority Applications (1)
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KR1020080077993A KR101063914B1 (ko) | 2008-08-08 | 2008-08-08 | 탄화규소에 내열금속카바이드를 오믹 접촉 형성시키는 방법및 이를 이용한 전력용 반도체 소자 |
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KR1020080077993A KR101063914B1 (ko) | 2008-08-08 | 2008-08-08 | 탄화규소에 내열금속카바이드를 오믹 접촉 형성시키는 방법및 이를 이용한 전력용 반도체 소자 |
Publications (2)
Publication Number | Publication Date |
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KR20100019122A KR20100019122A (ko) | 2010-02-18 |
KR101063914B1 true KR101063914B1 (ko) | 2011-09-14 |
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CN108550523B (zh) * | 2018-03-23 | 2020-10-27 | 西安理工大学 | 一种用光刻胶制备碳化硅欧姆电极的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20060125700A (ko) * | 2004-02-06 | 2006-12-06 | 마츠시타 덴끼 산교 가부시키가이샤 | 탄화규소 반도체소자 및 그 제조방법 |
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KR20060125700A (ko) * | 2004-02-06 | 2006-12-06 | 마츠시타 덴끼 산교 가부시키가이샤 | 탄화규소 반도체소자 및 그 제조방법 |
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