KR101055956B1 - 세정공정을 위한 부산물 수집공정 - Google Patents

세정공정을 위한 부산물 수집공정 Download PDF

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Publication number
KR101055956B1
KR101055956B1 KR1020097004768A KR20097004768A KR101055956B1 KR 101055956 B1 KR101055956 B1 KR 101055956B1 KR 1020097004768 A KR1020097004768 A KR 1020097004768A KR 20097004768 A KR20097004768 A KR 20097004768A KR 101055956 B1 KR101055956 B1 KR 101055956B1
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KR
South Korea
Prior art keywords
chamber structure
gas
wafer
anode
cathode
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Expired - Fee Related
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KR1020097004768A
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English (en)
Korean (ko)
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KR20090055566A (ko
Inventor
쿠니 에드워드 크랜달
윌리엄 조셉 머피
앤서니 켄달 스탬퍼
데이빗 크레이그 스트립
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20090055566A publication Critical patent/KR20090055566A/ko
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Publication of KR101055956B1 publication Critical patent/KR101055956B1/ko
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Classifications

    • H10P50/00—
    • H10P72/0406—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H10P70/234—

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020097004768A 2006-10-12 2007-10-12 세정공정을 위한 부산물 수집공정 Expired - Fee Related KR101055956B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/548,717 2006-10-12
US11/548,717 US8052799B2 (en) 2006-10-12 2006-10-12 By-product collecting processes for cleaning processes
PCT/US2007/081193 WO2008046035A1 (en) 2006-10-12 2007-10-12 By-product collecting processes for cleaning processes

Publications (2)

Publication Number Publication Date
KR20090055566A KR20090055566A (ko) 2009-06-02
KR101055956B1 true KR101055956B1 (ko) 2011-08-09

Family

ID=39283214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097004768A Expired - Fee Related KR101055956B1 (ko) 2006-10-12 2007-10-12 세정공정을 위한 부산물 수집공정

Country Status (5)

Country Link
US (1) US8052799B2 (enExample)
EP (1) EP2089169A4 (enExample)
JP (2) JP5284969B2 (enExample)
KR (1) KR101055956B1 (enExample)
WO (1) WO2008046035A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5612707B2 (ja) * 2010-12-28 2014-10-22 キヤノンアネルバ株式会社 プラズマｃｖｄ装置
CN106463342B (zh) * 2014-04-01 2020-04-03 Ev 集团 E·索尔纳有限责任公司 用于衬底表面处理的方法及装置
US10168626B2 (en) 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
US3617459A (en) * 1967-09-15 1971-11-02 Ibm Rf sputtering method and apparatus for producing insulating films of varied physical properties
JPS601952B2 (ja) * 1980-01-25 1985-01-18 三菱電機株式会社 プラズマエツチング装置
US4357203A (en) 1981-12-30 1982-11-02 Rca Corporation Plasma etching of polyimide
JPS632325A (ja) * 1986-06-20 1988-01-07 Fujitsu Ltd リアクテイブイオンエツチツング装置
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JPH04259218A (ja) * 1991-02-14 1992-09-14 Matsushita Electric Ind Co Ltd 配線基板の表面処理方法
US5354698A (en) * 1993-07-19 1994-10-11 Micron Technology, Inc. Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process
JPH08124864A (ja) * 1994-10-28 1996-05-17 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
JPH0983111A (ja) * 1995-09-13 1997-03-28 Hitachi Chem Co Ltd 半導体搭載用配線板の製造法
US5660682A (en) 1996-03-14 1997-08-26 Lsi Logic Corporation Plasma clean with hydrogen gas
US6071372A (en) * 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6547934B2 (en) 1998-05-18 2003-04-15 Applied Materials, Inc. Reduction of metal oxide in a dual frequency etch chamber
JP3675407B2 (ja) * 2001-06-06 2005-07-27 株式会社デンソー 電子装置
JP3989286B2 (ja) * 2002-04-26 2007-10-10 株式会社ルネサステクノロジ 半導体装置の製造方法
US20040045577A1 (en) * 2002-09-10 2004-03-11 Bing Ji Cleaning of processing chambers with dilute NF3 plasmas
JP2005032750A (ja) * 2003-07-07 2005-02-03 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
JP2005150399A (ja) * 2003-11-14 2005-06-09 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US20050189075A1 (en) * 2004-02-27 2005-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean chamber with wafer heating apparatus and method of use
JP4811870B2 (ja) 2004-04-09 2011-11-09 東京エレクトロン株式会社 Ｔｉ膜およびＴｉＮ膜の成膜方法およびコンタクト構造、ならびにコンピュータ読取可能な記憶媒体およびコンピュータプログラム
KR100712529B1 (ko) * 2005-09-02 2007-04-30 삼성전자주식회사 플라즈마 어플리케이터의 인시츄 세정 방법 및 그 세정방법을 채용한 플라즈마 어플리케이터

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes

Also Published As

Publication number Publication date
KR20090055566A (ko) 2009-06-02
EP2089169A4 (en) 2010-12-29
JP2010507237A (ja) 2010-03-04
EP2089169A1 (en) 2009-08-19
US8052799B2 (en) 2011-11-08
JP2012142584A (ja) 2012-07-26
WO2008046035A1 (en) 2008-04-17
US20080093212A1 (en) 2008-04-24
JP5284969B2 (ja) 2013-09-11

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