KR101032831B1 - 챔버 탈불화 및 웨이퍼 탈불화 단계들을 방해하는 플라즈마에칭 및 포토레지스트 스트립 프로세스 - Google Patents

챔버 탈불화 및 웨이퍼 탈불화 단계들을 방해하는 플라즈마에칭 및 포토레지스트 스트립 프로세스 Download PDF

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KR101032831B1
KR101032831B1 KR1020087025919A KR20087025919A KR101032831B1 KR 101032831 B1 KR101032831 B1 KR 101032831B1 KR 1020087025919 A KR1020087025919 A KR 1020087025919A KR 20087025919 A KR20087025919 A KR 20087025919A KR 101032831 B1 KR101032831 B1 KR 101032831B1
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South Korea
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chamber
plasma
photoresist mask
gas
source power
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Korean (ko)
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KR20090026253A (ko
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이펭 죠우
제랄도 에이. 델가디노
창-린 시에
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020087025919A 2006-03-24 2007-03-19 챔버 탈불화 및 웨이퍼 탈불화 단계들을 방해하는 플라즈마에칭 및 포토레지스트 스트립 프로세스 Expired - Fee Related KR101032831B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/388,363 2006-03-24
US11/388,363 US7244313B1 (en) 2006-03-24 2006-03-24 Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps

Publications (2)

Publication Number Publication Date
KR20090026253A KR20090026253A (ko) 2009-03-12
KR101032831B1 true KR101032831B1 (ko) 2011-05-06

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KR1020087025919A Expired - Fee Related KR101032831B1 (ko) 2006-03-24 2007-03-19 챔버 탈불화 및 웨이퍼 탈불화 단계들을 방해하는 플라즈마에칭 및 포토레지스트 스트립 프로세스

Country Status (6)

Country Link
US (1) US7244313B1 (https=)
EP (1) EP1999784A4 (https=)
JP (1) JP4825911B2 (https=)
KR (1) KR101032831B1 (https=)
CN (1) CN101448580B (https=)
WO (1) WO2007111893A2 (https=)

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US7510976B2 (en) * 2006-04-21 2009-03-31 Applied Materials, Inc. Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
CN102097360B (zh) * 2009-12-10 2016-08-03 中芯国际集成电路制造(上海)有限公司 刻蚀连接孔的方法
CN102125921B (zh) * 2010-01-20 2012-09-05 常州瑞择微电子科技有限公司 一种光掩模在清洗过程中的传输方法
JP5600447B2 (ja) * 2010-03-05 2014-10-01 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9318341B2 (en) * 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
US9190316B2 (en) * 2011-10-26 2015-11-17 Globalfoundries U.S. 2 Llc Low energy etch process for nitrogen-containing dielectric layer
CN104882389B (zh) * 2014-02-28 2017-12-26 无锡华润上华科技有限公司 一种半导体器件量测方法
CN105152795B (zh) * 2015-10-23 2018-11-06 武汉工程大学 共混改性二氧化硅乳液包膜磷酸二铵缓释复合肥及其制备方法
CN106356415B (zh) * 2016-12-02 2018-06-29 武汉新芯集成电路制造有限公司 背面金属格栅的制作方法
US12110589B2 (en) 2017-08-01 2024-10-08 Applied Materials, Inc. Methods for metal oxide post-treatment
US10872761B2 (en) 2018-06-25 2020-12-22 Mattson Technology Inc. Post etch defluorination process
CN113031409B (zh) * 2021-03-03 2024-12-31 苏州子山半导体科技有限公司 一种氧化钒热成像芯片制造中的聚酰亚胺光刻胶去除方法
JPWO2024203220A1 (https=) * 2023-03-24 2024-10-03

Citations (2)

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US6468599B1 (en) * 1998-12-25 2002-10-22 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation
US20040005517A1 (en) * 2002-07-08 2004-01-08 Shiqun Gu Plasma passivation

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US6051505A (en) 1998-03-05 2000-04-18 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
JP3921364B2 (ja) * 2001-08-21 2007-05-30 松下電器産業株式会社 半導体装置の製造方法
JP5038567B2 (ja) * 2001-09-26 2012-10-03 東京エレクトロン株式会社 エッチング方法
JP4326746B2 (ja) * 2002-01-07 2009-09-09 東京エレクトロン株式会社 プラズマ処理方法
JP2004071774A (ja) * 2002-08-05 2004-03-04 Tokyo Electron Ltd マルチチャンバシステムを用いたプラズマ処理方法
US20050101135A1 (en) * 2003-11-12 2005-05-12 Lam Research Corporation Minimizing the loss of barrier materials during photoresist stripping
US7638440B2 (en) 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
KR100704470B1 (ko) 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
KR100632473B1 (ko) * 2004-08-03 2006-10-09 삼성전자주식회사 염기성 물질 확산 장벽막을 사용하는 미세 전자 소자의듀얼 다마신 배선의 제조 방법
US7288488B2 (en) * 2005-05-10 2007-10-30 Lam Research Corporation Method for resist strip in presence of regular low k and/or porous low k dielectric materials
US8404594B2 (en) 2005-05-27 2013-03-26 Freescale Semiconductor, Inc. Reverse ALD

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468599B1 (en) * 1998-12-25 2002-10-22 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation
US20040005517A1 (en) * 2002-07-08 2004-01-08 Shiqun Gu Plasma passivation

Also Published As

Publication number Publication date
WO2007111893A2 (en) 2007-10-04
US7244313B1 (en) 2007-07-17
CN101448580A (zh) 2009-06-03
CN101448580B (zh) 2011-02-23
KR20090026253A (ko) 2009-03-12
WO2007111893A3 (en) 2009-01-08
JP4825911B2 (ja) 2011-11-30
EP1999784A2 (en) 2008-12-10
JP2009530861A (ja) 2009-08-27
EP1999784A4 (en) 2010-05-19

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