KR101023208B1 - 인장 변형된 기판을 구비한 ｍｏｓｆｅｔ 디바이스와 그제조방법 - Google Patents

인장 변형된 기판을 구비한 ｍｏｓｆｅｔ 디바이스와 그제조방법 Download PDF

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KR101023208B1
KR101023208B1 KR1020057013068A KR20057013068A KR101023208B1 KR 101023208 B1 KR101023208 B1 KR 101023208B1 KR 1020057013068 A KR1020057013068 A KR 1020057013068A KR 20057013068 A KR20057013068 A KR 20057013068A KR 101023208 B1 KR101023208 B1 KR 101023208B1
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layer
silicon
gate
depositing
substrate
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KR20050086961A (ko
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민흐 반 엔고
폴 알. 베세르
밍-렌 린
하이홍 왕
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020057013068A 2003-01-17 2004-01-13 인장 변형된 기판을 구비한 ｍｏｓｆｅｔ 디바이스와 그제조방법 Expired - Lifetime KR101023208B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/346,617 US7001837B2 (en) 2003-01-17 2003-01-17 Semiconductor with tensile strained substrate and method of making the same
US10/346,617 2003-01-17

Publications (2)

Publication Number Publication Date
KR20050086961A KR20050086961A (ko) 2005-08-30
KR101023208B1 true KR101023208B1 (ko) 2011-03-18

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KR1020057013068A Expired - Lifetime KR101023208B1 (ko) 2003-01-17 2004-01-13 인장 변형된 기판을 구비한 ｍｏｓｆｅｔ 디바이스와 그제조방법

Country Status (7)

Country Link
US (2) US7001837B2 (https=)
JP (1) JP2006517343A (https=)
KR (1) KR101023208B1 (https=)
CN (1) CN1762056B (https=)
DE (1) DE112004000146B4 (https=)
GB (1) GB2411768B (https=)
WO (1) WO2004068586A1 (https=)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649480B2 (en) 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
US7301180B2 (en) 2001-06-18 2007-11-27 Massachusetts Institute Of Technology Structure and method for a high-speed semiconductor device having a Ge channel layer
US6916727B2 (en) * 2001-06-21 2005-07-12 Massachusetts Institute Of Technology Enhancement of P-type metal-oxide-semiconductor field effect transistors
EP1415331A2 (en) * 2001-08-06 2004-05-06 Massachusetts Institute Of Technology Formation of planar strained layers
US7138649B2 (en) * 2001-08-09 2006-11-21 Amberwave Systems Corporation Dual-channel CMOS transistors with differentially strained channels
US6974735B2 (en) 2001-08-09 2005-12-13 Amberwave Systems Corporation Dual layer Semiconductor Devices
AU2002331077A1 (en) * 2001-08-13 2003-03-03 Amberwave Systems Corporation Dram trench capacitor and method of making the same
JP2005504436A (ja) 2001-09-21 2005-02-10 アンバーウェーブ システムズ コーポレイション 画定された不純物勾配を有するひずみ材料層を使用する半導体構造、およびその構造を製作するための方法。
WO2003028106A2 (en) * 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US6657276B1 (en) * 2001-12-10 2003-12-02 Advanced Micro Devices, Inc. Shallow trench isolation (STI) region with high-K liner and method of formation
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7074623B2 (en) 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7335545B2 (en) 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
WO2003105204A2 (en) * 2002-06-07 2003-12-18 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US7307273B2 (en) 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7615829B2 (en) 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7091068B1 (en) * 2002-12-06 2006-08-15 Advanced Micro Devices, Inc. Planarizing sacrificial oxide to improve gate critical dimension in semiconductor devices
US20040154083A1 (en) * 2002-12-23 2004-08-12 Mcvicker Henry J. Sports pad closure system with integrally molded hooks
WO2004081982A2 (en) 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
US7462526B2 (en) * 2003-11-18 2008-12-09 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
US7053400B2 (en) * 2004-05-05 2006-05-30 Advanced Micro Devices, Inc. Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility
US7321155B2 (en) * 2004-05-06 2008-01-22 Taiwan Semiconductor Manufacturing Co., Ltd. Offset spacer formation for strained channel CMOS transistor
US7227205B2 (en) * 2004-06-24 2007-06-05 International Business Machines Corporation Strained-silicon CMOS device and method
DE102004042167B4 (de) * 2004-08-31 2009-04-02 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Ausbilden einer Halbleiterstruktur, die Transistorelemente mit unterschiedlich verspannten Kanalgebieten umfasst, und entsprechende Halbleiterstruktur
US20060099763A1 (en) * 2004-10-28 2006-05-11 Yi-Cheng Liu Method of manufacturing semiconductor mos transistor device
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060172556A1 (en) * 2005-02-01 2006-08-03 Texas Instruments Incorporated Semiconductor device having a high carbon content strain inducing film and a method of manufacture therefor
JP2008530792A (ja) * 2005-02-11 2008-08-07 エヌエックスピー ビー ヴィ 電子デバイスにおけるｓｔｉ領域形成方法
CN100446282C (zh) * 2005-09-19 2008-12-24 深圳帝光电子有限公司 Led光源产品
US7615432B2 (en) * 2005-11-02 2009-11-10 Samsung Electronics Co., Ltd. HDP/PECVD methods of fabricating stress nitride structures for field effect transistors
US7550356B2 (en) * 2005-11-14 2009-06-23 United Microelectronics Corp. Method of fabricating strained-silicon transistors
US7939413B2 (en) * 2005-12-08 2011-05-10 Samsung Electronics Co., Ltd. Embedded stressor structure and process
US7888214B2 (en) * 2005-12-13 2011-02-15 Globalfoundries Singapore Pte. Ltd. Selective stress relaxation of contact etch stop layer through layout design
US20070158739A1 (en) * 2006-01-06 2007-07-12 International Business Machines Corporation Higher performance CMOS on (110) wafers
US20080124880A1 (en) * 2006-09-23 2008-05-29 Chartered Semiconductor Manufacturing Ltd. Fet structure using disposable spacer and stress inducing layer
US7897493B2 (en) * 2006-12-08 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Inducement of strain in a semiconductor layer
US7892928B2 (en) * 2007-03-23 2011-02-22 International Business Machines Corporation Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers
US7745847B2 (en) * 2007-08-09 2010-06-29 United Microelectronics Corp. Metal oxide semiconductor transistor
US8058123B2 (en) 2007-11-29 2011-11-15 Globalfoundries Singapore Pte. Ltd. Integrated circuit and method of fabrication thereof
US20090146194A1 (en) * 2007-12-05 2009-06-11 Ecole Polytechnique Federale De Lausanne (Epfl) Semiconductor device and method of manufacturing a semiconductor device
US8232186B2 (en) * 2008-05-29 2012-07-31 International Business Machines Corporation Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure
JP5381350B2 (ja) * 2009-06-03 2014-01-08 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8236709B2 (en) * 2009-07-29 2012-08-07 International Business Machines Corporation Method of fabricating a device using low temperature anneal processes, a device and design structure
TWI419324B (zh) * 2009-11-27 2013-12-11 Univ Nat Chiao Tung 具有三五族通道及四族源汲極之半導體裝置及其製造方法
US8865576B2 (en) * 2011-09-29 2014-10-21 Eastman Kodak Company Producing vertical transistor having reduced parasitic capacitance
US8759920B2 (en) * 2012-06-01 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US607178A (en) * 1898-07-12 Combined plow and harrow
US628113A (en) * 1898-07-30 1899-07-04 Carl Petersen Apparatus for indicating the number of conversations through telephones.
US649221A (en) * 1899-12-16 1900-05-08 Charles Slingland Warping-machine.
US20020125536A1 (en) * 1997-04-04 2002-09-12 Nippon Steel Corporation Semiconductor device and a method of manufacturing the same
US6492216B1 (en) * 2002-02-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Method of forming a transistor with a strained channel

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03247767A (ja) * 1990-02-26 1991-11-05 Fuji Electric Co Ltd 絶縁膜形成方法
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
JPH0562971A (ja) * 1991-09-02 1993-03-12 Fuji Electric Co Ltd 窒化シリコン膜の形成方法
JPH05315268A (ja) * 1992-05-13 1993-11-26 Matsushita Electric Ind Co Ltd プラズマｃｖｄ装置
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method
TW335511B (en) * 1996-08-02 1998-07-01 Applied Materials Inc Stress control by fluorination of silica film
US5843816A (en) * 1997-07-28 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated self-aligned butt contact process flow and structure for six transistor full complementary metal oxide semiconductor static random access memory cell
US6071784A (en) * 1997-08-29 2000-06-06 Advanced Micro Devices, Inc. Annealing of silicon oxynitride and silicon nitride films to eliminate high temperature charge loss
EP0928015A3 (en) * 1997-12-31 2003-07-02 Texas Instruments Incorporated Method of preventing boron penetration
US6215190B1 (en) * 1998-05-12 2001-04-10 International Business Machines Corporation Borderless contact to diffusion with respect to gate conductor and methods for fabricating
JP4258034B2 (ja) * 1998-05-27 2009-04-30 ソニー株式会社 半導体装置及び半導体装置の製造方法
JP2000031491A (ja) * 1998-07-14 2000-01-28 Hitachi Ltd 半導体装置，半導体装置の製造方法，半導体基板および半導体基板の製造方法
US6281132B1 (en) * 1998-10-06 2001-08-28 Advanced Micro Devices, Inc. Device and method for etching nitride spacers formed upon an integrated circuit gate conductor
US6448140B1 (en) * 1999-02-08 2002-09-10 Taiwan Semiconductor Manufacturing Company Laterally recessed tungsten silicide gate structure used with a self-aligned contact structure including a straight walled sidewall spacer while filling recess
US6177338B1 (en) * 1999-02-08 2001-01-23 Taiwan Semiconductor Manufacturing Company Two step barrier process
US6136688A (en) * 1999-10-20 2000-10-24 Vanguard International Semiconductor Corporation High stress oxide to eliminate BPSG/SiN cracking
US6426285B1 (en) * 1999-11-03 2002-07-30 Taiwan Semiconductor Manufacturing Company Method to solve intermetallic dielectric cracks in integrated circuit devices
US6211083B1 (en) * 2000-04-17 2001-04-03 Taiwan Semiconductor Manufacturing Company Use of a novel capped anneal procedure to improve salicide formation
US6399512B1 (en) * 2000-06-15 2002-06-04 Cypress Semiconductor Corporation Method of making metallization and contact structures in an integrated circuit comprising an etch stop layer
US6503833B1 (en) * 2000-11-15 2003-01-07 International Business Machines Corporation Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby
KR100784603B1 (ko) * 2000-11-22 2007-12-11 가부시키가이샤 히타치세이사쿠쇼 반도체 장치 및 그 제조 방법
US6544854B1 (en) * 2000-11-28 2003-04-08 Lsi Logic Corporation Silicon germanium CMOS channel
US6287916B1 (en) * 2000-12-07 2001-09-11 Lattice Semiconductor Corporation Method for forming a semiconductor device using LPCVD nitride to protect floating gate from charge loss
JP2003086708A (ja) * 2000-12-08 2003-03-20 Hitachi Ltd 半導体装置及びその製造方法
JP4441109B2 (ja) * 2000-12-08 2010-03-31 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2002198368A (ja) * 2000-12-26 2002-07-12 Nec Corp 半導体装置の製造方法
US6724008B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6432784B1 (en) * 2001-03-12 2002-08-13 Advanced Micro Devices, Inc. Method of forming L-shaped nitride spacers
US6620664B2 (en) * 2002-02-07 2003-09-16 Sharp Laboratories Of America, Inc. Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells
US6573172B1 (en) * 2002-09-16 2003-06-03 Advanced Micro Devices, Inc. Methods for improving carrier mobility of PMOS and NMOS devices
US6902991B2 (en) * 2002-10-24 2005-06-07 Advanced Micro Devices, Inc. Semiconductor device having a thick strained silicon layer and method of its formation
US6657223B1 (en) * 2002-10-29 2003-12-02 Advanced Micro Devices, Inc. Strained silicon MOSFET having silicon source/drain regions and method for its fabrication
US6611029B1 (en) * 2002-11-08 2003-08-26 Advanced Micro Devices, Inc. Double gate semiconductor device having separate gates
US6787423B1 (en) * 2002-12-09 2004-09-07 Advanced Micro Devices, Inc. Strained-silicon semiconductor device
US7371629B2 (en) * 2002-12-09 2008-05-13 Taiwan Semiconductor Manufacturing Company N/PMOS saturation current, HCE, and Vt stability by contact etch stop film modifications
US6825529B2 (en) * 2002-12-12 2004-11-30 International Business Machines Corporation Stress inducing spacers
US6730576B1 (en) * 2002-12-31 2004-05-04 Advanced Micro Devices, Inc. Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US607178A (en) * 1898-07-12 Combined plow and harrow
US628113A (en) * 1898-07-30 1899-07-04 Carl Petersen Apparatus for indicating the number of conversations through telephones.
US649221A (en) * 1899-12-16 1900-05-08 Charles Slingland Warping-machine.
US20020125536A1 (en) * 1997-04-04 2002-09-12 Nippon Steel Corporation Semiconductor device and a method of manufacturing the same
US6492216B1 (en) * 2002-02-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Method of forming a transistor with a strained channel

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DE112004000146B4 (de) 2010-05-06
US7701019B2 (en) 2010-04-20
GB2411768A (en) 2005-09-07
WO2004068586A1 (en) 2004-08-12
KR20050086961A (ko) 2005-08-30
CN1762056B (zh) 2011-06-01
DE112004000146T5 (de) 2006-02-02
CN1762056A (zh) 2006-04-19
US20060138479A1 (en) 2006-06-29
JP2006517343A (ja) 2006-07-20
US7001837B2 (en) 2006-02-21
US20040142545A1 (en) 2004-07-22
GB0512330D0 (en) 2005-07-27
GB2411768B (en) 2006-04-26

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