KR101018766B1 - 메모리 시스템 - Google Patents

메모리 시스템 Download PDF

Info

Publication number
KR101018766B1
KR101018766B1 KR1020097018121A KR20097018121A KR101018766B1 KR 101018766 B1 KR101018766 B1 KR 101018766B1 KR 1020097018121 A KR1020097018121 A KR 1020097018121A KR 20097018121 A KR20097018121 A KR 20097018121A KR 101018766 B1 KR101018766 B1 KR 101018766B1
Authority
KR
South Korea
Prior art keywords
data
logical
storage area
management unit
track
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097018121A
Other languages
English (en)
Korean (ko)
Other versions
KR20090117935A (ko
Inventor
준지 야노
히데노리 마츠자키
고스케 하츠다
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20090117935A publication Critical patent/KR20090117935A/ko
Application granted granted Critical
Publication of KR101018766B1 publication Critical patent/KR101018766B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0866—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches for peripheral storage systems, e.g. disk cache
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G06F12/0897—Caches characterised by their organisation or structure with two or more cache hierarchy levels
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/10—Program control for peripheral devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7205—Cleaning, compaction, garbage collection, erase control

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Memory System (AREA)
KR1020097018121A 2008-03-01 2008-09-22 메모리 시스템 Expired - Fee Related KR101018766B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008051473A JP4498426B2 (ja) 2008-03-01 2008-03-01 メモリシステム
JPJP-P-2008-051473 2008-03-01

Publications (2)

Publication Number Publication Date
KR20090117935A KR20090117935A (ko) 2009-11-16
KR101018766B1 true KR101018766B1 (ko) 2011-03-07

Family

ID=41055699

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018121A Expired - Fee Related KR101018766B1 (ko) 2008-03-01 2008-09-22 메모리 시스템

Country Status (7)

Country Link
US (2) US7904640B2 (https=)
EP (1) EP2250567A4 (https=)
JP (1) JP4498426B2 (https=)
KR (1) KR101018766B1 (https=)
CN (1) CN101647007A (https=)
TW (1) TWI400615B (https=)
WO (1) WO2009110126A1 (https=)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100842680B1 (ko) * 2007-01-08 2008-07-01 삼성전자주식회사 플래시 메모리 장치의 오류 정정 컨트롤러 및 그것을포함하는 메모리 시스템
CN101632068B (zh) 2007-12-28 2015-01-14 株式会社东芝 半导体存储装置
JP4461170B2 (ja) 2007-12-28 2010-05-12 株式会社東芝 メモリシステム
JP4510107B2 (ja) * 2008-03-12 2010-07-21 株式会社東芝 メモリシステム
JP4691122B2 (ja) * 2008-03-01 2011-06-01 株式会社東芝 メモリシステム
JP4745356B2 (ja) * 2008-03-01 2011-08-10 株式会社東芝 メモリシステム
JP4653817B2 (ja) * 2008-03-01 2011-03-16 株式会社東芝 メモリシステム
KR101067457B1 (ko) 2008-03-01 2011-09-27 가부시끼가이샤 도시바 메모리 시스템
JP4762261B2 (ja) * 2008-03-12 2011-08-31 株式会社東芝 メモリシステム
JP4439569B2 (ja) * 2008-04-24 2010-03-24 株式会社東芝 メモリシステム
JP5221332B2 (ja) * 2008-12-27 2013-06-26 株式会社東芝 メモリシステム
JP5317690B2 (ja) 2008-12-27 2013-10-16 株式会社東芝 メモリシステム
JP5323199B2 (ja) 2009-02-12 2013-10-23 株式会社東芝 メモリシステム及びメモリシステムの制御方法
TWI408689B (zh) * 2009-04-14 2013-09-11 Jmicron Technology Corp 存取儲存裝置的方法及相關控制電路
TW201102812A (en) * 2009-07-15 2011-01-16 A Data Technology Co Ltd A storage device and data processing method thereof
JP5221593B2 (ja) * 2010-04-27 2013-06-26 株式会社東芝 メモリシステム
CN102375698B (zh) * 2010-08-23 2014-06-25 群联电子股份有限公司 数据串分派与传送方法、存储器控制器与存储器储存装置
JP5535128B2 (ja) 2010-12-16 2014-07-02 株式会社東芝 メモリシステム
JP2012141946A (ja) * 2010-12-16 2012-07-26 Toshiba Corp 半導体記憶装置
KR101734199B1 (ko) * 2010-12-29 2017-05-24 삼성전자주식회사 멀티-비트 메모리 장치를 포함한 데이터 저장 시스템 및 그것의 동작 방법
WO2012100087A2 (en) * 2011-01-19 2012-07-26 Fusion-Io, Inc. Apparatus, system, and method for managing out-of-service conditions
US8458145B2 (en) * 2011-01-20 2013-06-04 Infinidat Ltd. System and method of storage optimization
JP5221699B2 (ja) * 2011-03-23 2013-06-26 株式会社東芝 半導体記憶装置
KR101792867B1 (ko) 2011-06-16 2017-11-02 삼성전자주식회사 멀티-레벨 메모리 장치를 포함한 데이터 저장 시스템 및 그것의 동작 방법
US8990493B1 (en) 2011-06-30 2015-03-24 Western Digital Technologies, Inc. Method and apparatus for performing force unit access writes on a disk
TWI448892B (zh) * 2011-09-06 2014-08-11 Phison Electronics Corp 資料搬移方法、記憶體控制器與記憶體儲存裝置
CN102999437B (zh) * 2011-09-19 2015-12-16 群联电子股份有限公司 数据搬移方法、存储器控制器与存储器储存装置
US20130091321A1 (en) * 2011-10-11 2013-04-11 Cisco Technology, Inc. Method and apparatus for utilizing nand flash in a memory system hierarchy
JP5674634B2 (ja) 2011-12-28 2015-02-25 株式会社東芝 コントローラ、記憶装置およびプログラム
JP5713926B2 (ja) * 2012-01-13 2015-05-07 株式会社東芝 磁気ディスク装置及び同磁気ディスク装置におけるデータバッファリング方法
US8554963B1 (en) 2012-03-23 2013-10-08 DSSD, Inc. Storage system with multicast DMA and unified address space
US8370567B1 (en) * 2012-03-23 2013-02-05 DSSD, Inc. Storage system with self describing data
KR101351550B1 (ko) * 2012-04-18 2014-01-22 연세대학교 산학협력단 비휘발성 메인 메모리 기반을 위한 이중 버퍼 구조 및 데이터 운영 방식
US9645917B2 (en) * 2012-05-22 2017-05-09 Netapp, Inc. Specializing I/O access patterns for flash storage
CN104303165A (zh) * 2012-06-04 2015-01-21 惠普发展公司，有限责任合伙企业 管理对存储在输入块中的数据待执行的分析函数
JP5813589B2 (ja) * 2012-07-13 2015-11-17 株式会社東芝 メモリシステムおよびその制御方法
US8392428B1 (en) 2012-09-12 2013-03-05 DSSD, Inc. Method and system for hash fragment representation
US9471484B2 (en) 2012-09-19 2016-10-18 Novachips Canada Inc. Flash memory controller having dual mode pin-out
JP6028670B2 (ja) * 2013-04-22 2016-11-16 株式会社デンソー データ記憶装置
CN103544995B (zh) * 2013-08-27 2016-09-21 华为技术有限公司 一种坏道修复方法及装置
KR102244618B1 (ko) * 2014-02-21 2021-04-26 삼성전자 주식회사 플래시 메모리 시스템 및 플래시 메모리 시스템의 제어 방법
CN105243071A (zh) * 2014-07-12 2016-01-13 航天恒星科技有限公司 一种适用于无文件系统的可检索文件存取方法
US9378149B1 (en) 2014-08-29 2016-06-28 Emc Corporation Method and system for tracking modification times of data in a storage system
US11347637B2 (en) 2014-10-30 2022-05-31 Kioxia Corporation Memory system and non-transitory computer readable recording medium
US10102118B2 (en) 2014-10-30 2018-10-16 Toshiba Memory Corporation Memory system and non-transitory computer readable recording medium
TWI567554B (zh) * 2014-11-06 2017-01-21 慧榮科技股份有限公司 緩存及讀取即將寫入儲存單元之資料的方法以及使用該方法的裝置
US9710199B2 (en) 2014-11-07 2017-07-18 International Business Machines Corporation Non-volatile memory data storage with low read amplification
US9400603B2 (en) 2014-12-16 2016-07-26 International Business Machines Corporation Implementing enhanced performance flash memory devices
US10162700B2 (en) 2014-12-23 2018-12-25 International Business Machines Corporation Workload-adaptive data packing algorithm
CN104503707B (zh) 2014-12-24 2018-03-06 华为技术有限公司 读取数据的方法以及装置
US10049035B1 (en) * 2015-03-10 2018-08-14 Reniac, Inc. Stream memory management unit (SMMU)
JP6384375B2 (ja) 2015-03-23 2018-09-05 富士通株式会社 情報処理装置、記憶装置制御方法、記憶装置制御プログラム及び情報処理システム
KR101718713B1 (ko) * 2015-05-29 2017-03-22 주식회사 이에프텍 비휘발성 메모리 시스템
US9557919B2 (en) * 2015-06-26 2017-01-31 EMC IP Holding Company LLC Resolving write pressure using existing backup appliance as additional primary storage
US9712190B2 (en) 2015-09-24 2017-07-18 International Business Machines Corporation Data packing for compression-enabled storage systems
US9870285B2 (en) 2015-11-18 2018-01-16 International Business Machines Corporation Selectively de-straddling data pages in non-volatile memory
JP2018041204A (ja) 2016-09-06 2018-03-15 東芝メモリ株式会社 メモリ装置及び情報処理システム
TWI664527B (zh) 2018-03-20 2019-07-01 慧榮科技股份有限公司 用來於一記憶裝置中進行初始化之方法、記憶裝置及其控制器以及電子裝置
JP2022094705A (ja) * 2020-12-15 2022-06-27 キオクシア株式会社 メモリシステムおよび制御方法
CN112988072B (zh) * 2021-03-22 2023-11-14 北京车和家信息技术有限公司 数据处理方法和装置、存储介质和电子设备
JP7713417B2 (ja) * 2022-03-18 2025-07-25 株式会社日立製作所 ストレージシステム及びデータキャッシュ方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050289291A1 (en) 2004-06-25 2005-12-29 Kabushiki Kaisha Toshiba Mobile electronic equipment
US20080028132A1 (en) 2006-07-31 2008-01-31 Masanori Matsuura Non-volatile storage device, data storage system, and data storage method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3176019B2 (ja) 1995-04-05 2001-06-11 株式会社東芝 不揮発性半導体記憶部を含む記憶システム
JP3688835B2 (ja) 1996-12-26 2005-08-31 株式会社東芝 データ記憶システム及び同システムに適用するデータ転送方法
TW484064B (en) * 1999-07-12 2002-04-21 Feiya Technology Corp Flash memory management, data linking architecture and algorithm
US7966462B2 (en) * 1999-08-04 2011-06-21 Super Talent Electronics, Inc. Multi-channel flash module with plane-interleaved sequential ECC writes and background recycling to restricted-write flash chips
KR100389867B1 (ko) * 2001-06-04 2003-07-04 삼성전자주식회사 플래시 메모리 관리방법
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
KR100526190B1 (ko) * 2004-02-06 2005-11-03 삼성전자주식회사 플래시 메모리의 재사상 방법
US7212440B2 (en) * 2004-12-30 2007-05-01 Sandisk Corporation On-chip data grouping and alignment
US20070041050A1 (en) * 2005-08-17 2007-02-22 Bing-Yu Wang Memory management method and system
JP4362549B1 (ja) * 2006-08-04 2009-11-11 サンディスク コーポレイション 段階的ガーベッジコレクション
US7978516B2 (en) * 2007-12-27 2011-07-12 Pliant Technology, Inc. Flash memory controller having reduced pinout
KR100953044B1 (ko) * 2008-05-26 2010-04-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 방법
US8327072B2 (en) * 2008-07-23 2012-12-04 International Business Machines Corporation Victim cache replacement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050289291A1 (en) 2004-06-25 2005-12-29 Kabushiki Kaisha Toshiba Mobile electronic equipment
US20080028132A1 (en) 2006-07-31 2008-01-31 Masanori Matsuura Non-volatile storage device, data storage system, and data storage method

Also Published As

Publication number Publication date
US20100274950A1 (en) 2010-10-28
EP2250567A4 (en) 2011-09-28
TWI400615B (zh) 2013-07-01
WO2009110126A1 (en) 2009-09-11
TW200947213A (en) 2009-11-16
US7904640B2 (en) 2011-03-08
JP4498426B2 (ja) 2010-07-07
EP2250567A1 (en) 2010-11-17
CN101647007A (zh) 2010-02-10
US20110099349A1 (en) 2011-04-28
KR20090117935A (ko) 2009-11-16
US8176237B2 (en) 2012-05-08
JP2009211227A (ja) 2009-09-17

Similar Documents

Publication Publication Date Title
KR101018766B1 (ko) 메모리 시스템
KR101075923B1 (ko) 메모리 시스템
KR101101655B1 (ko) 메모리 시스템
JP4675985B2 (ja) メモリシステム
KR101079890B1 (ko) 메모리 시스템
KR101067457B1 (ko) 메모리 시스템
JP4691122B2 (ja) メモリシステム
JP4691123B2 (ja) メモリシステム
JP4653817B2 (ja) メモリシステム
JP4551940B2 (ja) メモリシステム
JP2009211233A (ja) メモリシステム
JP2009211234A (ja) メモリシステム
JP4592774B2 (ja) メモリシステム
JP5221593B2 (ja) メモリシステム
JP4510107B2 (ja) メモリシステム
KR101032671B1 (ko) 메모리 시스템
JP5178857B2 (ja) メモリシステム

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140224

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140224

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000