KR101014600B1 - 결정제조용 히터 및 결정제조장치와 결정제조방법 - Google Patents

결정제조용 히터 및 결정제조장치와 결정제조방법 Download PDF

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Publication number
KR101014600B1
KR101014600B1 KR1020047012641A KR20047012641A KR101014600B1 KR 101014600 B1 KR101014600 B1 KR 101014600B1 KR 1020047012641 A KR1020047012641 A KR 1020047012641A KR 20047012641 A KR20047012641 A KR 20047012641A KR 101014600 B1 KR101014600 B1 KR 101014600B1
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South Korea
Prior art keywords
crystal
heater
crystal manufacturing
diameter
heat generating
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Expired - Fee Related
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KR1020047012641A
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English (en)
Korean (ko)
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KR20050037434A (ko
Inventor
스스무 소노카와
료지 호시
와타루 사토
토모히코 오오타
Original Assignee
신에쯔 한도타이 가부시키가이샤
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Publication of KR20050037434A publication Critical patent/KR20050037434A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020047012641A 2002-09-13 2003-09-08 결정제조용 히터 및 결정제조장치와 결정제조방법 Expired - Fee Related KR101014600B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002267600A JP4161655B2 (ja) 2002-09-13 2002-09-13 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法
JPJP-P-2002-00267600 2002-09-13

Publications (2)

Publication Number Publication Date
KR20050037434A KR20050037434A (ko) 2005-04-21
KR101014600B1 true KR101014600B1 (ko) 2011-02-16

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KR1020047012641A Expired - Fee Related KR101014600B1 (ko) 2002-09-13 2003-09-08 결정제조용 히터 및 결정제조장치와 결정제조방법

Country Status (5)

Country Link
US (1) US7201801B2 (https=)
EP (1) EP1538242B8 (https=)
JP (1) JP4161655B2 (https=)
KR (1) KR101014600B1 (https=)
WO (1) WO2004024998A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018101758A1 (ko) * 2016-11-30 2018-06-07 웅진에너지 주식회사 히팅 유닛 및 이를 포함하는 잉곳 성장 장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4807033B2 (ja) * 2005-10-17 2011-11-02 日本精工株式会社 ハーフトロイダル型無段変速機
JP4919343B2 (ja) * 2007-02-06 2012-04-18 コバレントマテリアル株式会社 単結晶引上装置
JP2011093778A (ja) * 2009-09-29 2011-05-12 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハおよびシリコン単結晶の製造方法
JP2012051775A (ja) * 2010-09-03 2012-03-15 Hitachi Cable Ltd 発熱体及びこれを用いた結晶成長装置並びに気相成長装置
DE102011079284B3 (de) 2011-07-15 2012-11-29 Siltronic Ag Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall
JP2013220954A (ja) * 2012-04-13 2013-10-28 Ibiden Co Ltd 黒鉛ヒータ
US10233562B2 (en) * 2013-04-24 2019-03-19 Sumco Techxiv Corporation Method for producing single crystal, and method for producing silicon wafer
JP6459406B2 (ja) * 2014-11-04 2019-01-30 住友電気工業株式会社 炭化珪素単結晶の製造装置および炭化珪素単結晶の製造方法
CN107460539B (zh) * 2017-06-30 2018-10-19 内蒙古中环光伏材料有限公司 一种单晶硅生产方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11199371A (ja) 1997-11-05 1999-07-27 Mitsubishi Materials Silicon Corp 単結晶育成装置用カーボンヒータ
JP2001039792A (ja) 1999-07-26 2001-02-13 Mitsubishi Materials Silicon Corp 単結晶成長用多機能ヒーターおよび単結晶引上装置

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JPH02172885A (ja) 1988-12-26 1990-07-04 Nkk Corp シリコン単結晶の製造方法
JP3401059B2 (ja) 1993-09-06 2003-04-28 松下電器産業株式会社 電気化学式ガスセンサー
JPH09208371A (ja) 1996-02-02 1997-08-12 Sumitomo Sitix Corp 単結晶引き上げ装置用ヒータ
JPH09227286A (ja) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd 単結晶製造装置
JP2956575B2 (ja) 1996-03-01 1999-10-04 住友金属工業株式会社 単結晶育成用抵抗発熱体
JPH09263491A (ja) * 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
JPH11139895A (ja) 1997-11-11 1999-05-25 Komatsu Electron Metals Co Ltd 結晶体引上げ装置のルツボ加熱用ヒーター
JP3444178B2 (ja) * 1998-02-13 2003-09-08 信越半導体株式会社 単結晶製造方法
US6093913A (en) * 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
US6285011B1 (en) * 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11199371A (ja) 1997-11-05 1999-07-27 Mitsubishi Materials Silicon Corp 単結晶育成装置用カーボンヒータ
JP2001039792A (ja) 1999-07-26 2001-02-13 Mitsubishi Materials Silicon Corp 単結晶成長用多機能ヒーターおよび単結晶引上装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018101758A1 (ko) * 2016-11-30 2018-06-07 웅진에너지 주식회사 히팅 유닛 및 이를 포함하는 잉곳 성장 장치
KR20180062083A (ko) * 2016-11-30 2018-06-08 웅진에너지 주식회사 히팅 유닛 및 이를 포함하는 잉곳 성장 장치
KR101885210B1 (ko) * 2016-11-30 2018-09-11 웅진에너지 주식회사 히팅 유닛 및 이를 포함하는 잉곳 성장 장치
US10287706B2 (en) 2016-11-30 2019-05-14 Woongjin Energy Co., Ltd. Heating unit comprised of ring heaters with ring support units disposed between the ring heaters and ingot growing device including the same

Also Published As

Publication number Publication date
WO2004024998A1 (ja) 2004-03-25
JP2004099416A (ja) 2004-04-02
KR20050037434A (ko) 2005-04-21
EP1538242B8 (en) 2013-04-03
US20050081779A1 (en) 2005-04-21
EP1538242A1 (en) 2005-06-08
EP1538242A4 (en) 2009-07-29
US7201801B2 (en) 2007-04-10
JP4161655B2 (ja) 2008-10-08
EP1538242B1 (en) 2012-08-08

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