KR101004874B1 - 표시패널 및 그 제조방법 - Google Patents
표시패널 및 그 제조방법 Download PDFInfo
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- KR101004874B1 KR101004874B1 KR1020080118875A KR20080118875A KR101004874B1 KR 101004874 B1 KR101004874 B1 KR 101004874B1 KR 1020080118875 A KR1020080118875 A KR 1020080118875A KR 20080118875 A KR20080118875 A KR 20080118875A KR 101004874 B1 KR101004874 B1 KR 101004874B1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Abstract
Description
Claims (14)
- 제 1 전극, 적어도 1층으로 이루어지는 담체수송층, 제 2 전극이 적층되어 이루어지는 발광소자를 구비한 표시패널의 제조방법으로서,기판 상에 산계의 에칭액(etchant)으로 웨트 에칭에 의해서 트랜지스터의 게이트 전극을 형성하는 공정과,상기 기판 상의 소정 영역에 상기 제 1 전극을 형성하는 공정과,상기 게이트 전극과 상기 제 1 전극을 포함하는 상기 기판 상에 절연막을 형성한 후, 해당 절연막을 에칭에 의해 패터닝하여 상기 제 1 전극의 소정의 영역만이 노출되는 개구부를 형성하는 공정과,적어도 상기 개구부에 노출되는 상기 제 1 전극 상에 상기 담체수송층을 형성하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 1 항에 있어서,상기 절연막은 기판을 침식하는 에칭가스에 의해서 패터닝되고, 상기 절연막은 질화실리콘 또는 산화실리콘인 것을 특징으로 하는 표시패널의 제조방법.
- 제 2 항에 있어서,상기 에칭가스는 산소 및 SFO6의 혼합가스인 것을 특징으로 하는 표시패널의 제조방법.
- 제 1 항 내지 제 3 항 중의 어느 한 항에 있어서,상기 개구부가 형성되는 상기 절연막은 트랜지스터의 게이트 절연막을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 4 항에 있어서,상기 제 1 전극을 형성하는 공정 후에, 상기 트랜지스터의 소스전극 또는 드레인전극의 어느 한쪽을 형성하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 1 항 내지 제 3 항 중의 어느 한 항에 있어서,상기 개구부가 형성되는 상기 절연막은 층간절연막을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 6 항에 있어서,상기 층간절연막 상에 감광성 수지층을 패터닝하는 것에 의해 뱅크를 형성하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 7 항에 있어서,상기 뱅크를 형성하는 공정 후에, 상기 기판을 순수한 물로 세정하고, 산소 플라스마 처리나 UV오존 처리를 실시하여, 상기 제 1 전극 표면을 유기화합물 함유 액에 대해 친액화하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 8 항에 있어서,상기 제 1 전극을 친액화하는 공정 후에, 상기 뱅크의 표면을 상기 유기화합물 함유액에 대해 발액화하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 9 항에 있어서,상기 담체수송층을 형성하는 공정은 상기 뱅크 표면을 발액화하는 공정 후에, 상기 유기화합물 함유액을 도포하여 형성하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 10 항에 있어서,상기 담체수송층을 형성하는 공정 후에, 상기 담체수송층 상에 상기 제 2 전극을 형성하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 삭제
- 제 1 전극, 적어도 1층으로 이루어지는 담체수송층, 제 2 전극이 적층되어 이루어지는 발광소자를 구비한 표시패널의 제조방법으로서,기판 상에 산계의 에칭액으로 웨트 에칭에 의해서 트랜지스터의 게이트 전극을 형성하는 공정과,기판 상의 소정 영역에 제 1 전극을 형성하는 공정과,상기 게이트 전극과 상기 제 1 전극을 형성한 후에, 게이트의 절연막을 퇴적하고, 에칭가스에 의해서 상기 제 1 전극 상의 상기 게이트 절연막만을 제거하는 공정과,상기 제 1 전극 상에 상기 담체수송층을 형성하는 공정과,상기 담체수송층 상에 상기 제 2 전극을 형성하는 공정을 포함하는 것을 특징으로 하는 표시패널의 제조방법.
- 제 1 전극, 적어도 1층으로 이루어지는 담체수송층, 제 2 전극이 적층되어 이루어지는 발광소자를 구비한 표시패널로서,절연막의 에칭가스에 노출되지 않은 소정 영역을 갖는 기판과,상기 기판 상에 산계의 에칭액(etchant)으로 웨트 에칭에 의해서 형성된 트랜지스터의 게이트 전극과,상기 기판의 소정 영역에 설치된 상기 제 1 전극과,상기 게이트 전극과 상기 제 1 전극을 포함하는 상기 기판 상에 형성되고, 상기 제 1 전극의 소정의 영역이 노출되는 개구부를 가진 상기 절연막과,적어도 상기 개구부에 노출되는 상기 제 1 전극 상에 형성된 상기 담체수송층과,상기 담체수송층 상에 형성되는 상기 제 2 전극을 포함하는 것을 특징으로 하는 표시패널.
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JP5906132B2 (ja) * | 2012-05-09 | 2016-04-20 | 株式会社ジャパンディスプレイ | 表示装置 |
KR20140065271A (ko) | 2012-11-21 | 2014-05-29 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR101971202B1 (ko) * | 2012-11-22 | 2019-04-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
JP2014143410A (ja) | 2012-12-28 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US9006719B2 (en) * | 2013-01-16 | 2015-04-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd | OLED pixel structure and OLED panel each having three colored light emitting zones arranged in parallel |
US9012259B2 (en) * | 2013-01-17 | 2015-04-21 | Stmicroelectronics S.R.L. | Thin film transistors formed by organic semiconductors using a hybrid patterning regime |
KR102255197B1 (ko) | 2014-05-02 | 2021-05-25 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
KR102146344B1 (ko) * | 2014-05-22 | 2020-08-21 | 엘지디스플레이 주식회사 | 유기전계발광소자 |
JP6146594B1 (ja) * | 2015-12-22 | 2017-06-14 | カシオ計算機株式会社 | 表示装置及びその制御方法、制御プログラム |
CN107946347B (zh) * | 2017-11-27 | 2021-08-10 | 合肥鑫晟光电科技有限公司 | 一种oled显示面板及其制备方法、显示装置 |
TWI678009B (zh) * | 2018-06-22 | 2019-11-21 | 友達光電股份有限公司 | 顯示面板及其製作方法 |
KR20200024382A (ko) * | 2018-08-27 | 2020-03-09 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
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