KR100994903B1 - 규소 함유 레지스트 조성물 및 이것을 이용한 패턴 형성방법 - Google Patents

규소 함유 레지스트 조성물 및 이것을 이용한 패턴 형성방법 Download PDF

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Publication number
KR100994903B1
KR100994903B1 KR1020050093000A KR20050093000A KR100994903B1 KR 100994903 B1 KR100994903 B1 KR 100994903B1 KR 1020050093000 A KR1020050093000 A KR 1020050093000A KR 20050093000 A KR20050093000 A KR 20050093000A KR 100994903 B1 KR100994903 B1 KR 100994903B1
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South Korea
Prior art keywords
formula
group
resist composition
acid
pattern
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Expired - Fee Related
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KR1020050093000A
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English (en)
Korean (ko)
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KR20060052006A (ko
Inventor
가쯔야 다께무라
가즈미 노다
요우이찌 오사와
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신에쓰 가가꾸 고교 가부시끼가이샤
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020050093000A 2004-10-05 2005-10-04 규소 함유 레지스트 조성물 및 이것을 이용한 패턴 형성방법 Expired - Fee Related KR100994903B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00292290 2004-10-05
JP2004292290A JP2006106311A (ja) 2004-10-05 2004-10-05 ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
KR20060052006A KR20060052006A (ko) 2006-05-19
KR100994903B1 true KR100994903B1 (ko) 2010-11-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050093000A Expired - Fee Related KR100994903B1 (ko) 2004-10-05 2005-10-04 규소 함유 레지스트 조성물 및 이것을 이용한 패턴 형성방법

Country Status (4)

Country Link
US (1) US7510816B2 (https=)
JP (1) JP2006106311A (https=)
KR (1) KR100994903B1 (https=)
TW (1) TW200626676A (https=)

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Publication number Priority date Publication date Assignee Title
JP4488215B2 (ja) * 2004-08-19 2010-06-23 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
JP4600679B2 (ja) * 2006-02-13 2010-12-15 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
JP4600678B2 (ja) * 2006-02-13 2010-12-15 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
DE602007000498D1 (de) * 2006-04-11 2009-03-12 Shinetsu Chemical Co Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren
WO2008001782A1 (fr) * 2006-06-28 2008-01-03 Tokyo Ohka Kogyo Co., Ltd. Composition de résine photosensible et procédé de formation d'un motif
JP4359629B2 (ja) 2007-05-02 2009-11-04 信越化学工業株式会社 化学増幅型レジスト組成物の製造方法
JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
WO2010086850A2 (en) 2009-01-29 2010-08-05 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
KR101036803B1 (ko) * 2009-07-20 2011-05-25 서울대학교산학협력단 전자빔 리소그라피용 레지스트 및 전자빔 리소그라피용 레지스트 현상방법
TWI521018B (zh) * 2010-07-14 2016-02-11 Jsr股份有限公司 Poly Silicon alumoxane composition and pattern forming method
JP6064570B2 (ja) * 2012-12-10 2017-01-25 Jsr株式会社 表示素子用感放射線性樹脂組成物、硬化膜、硬化膜の製造方法、半導体素子および表示素子
KR20210099692A (ko) * 2020-02-04 2021-08-13 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 포토리소그래피 방법 및 이를 이용한 반도체 소자의 제조 방법
CN117858927A (zh) 2021-09-24 2024-04-09 东丽株式会社 固化膜形成用硅氧烷树脂组合物、固化膜和聚硅氧烷的制造方法
CN119631021A (zh) * 2023-06-30 2025-03-14 潍坊星泰克微电子材料有限公司 使用硅光致抗蚀剂的光刻方法

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JP2002194085A (ja) * 2000-10-20 2002-07-10 Jsr Corp ポリシロキサン
JP2002268227A (ja) * 2001-03-13 2002-09-18 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP2002278073A (ja) * 2001-03-16 2002-09-27 Jsr Corp 感放射線性樹脂組成物
KR20050033822A (ko) * 2003-10-07 2005-04-13 신에쓰 가가꾸 고교 가부시끼가이샤 감방사선성 수지 조성물 및 이것을 사용한 패턴 형성 방법

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JP3830183B2 (ja) 1995-09-29 2006-10-04 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
JP3587413B2 (ja) 1995-12-20 2004-11-10 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JP3798458B2 (ja) 1996-02-02 2006-07-19 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
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JP3533951B2 (ja) 1997-08-06 2004-06-07 信越化学工業株式会社 高分子シリコーン化合物、レジスト材料及びパターン形成方法
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JP2002055346A (ja) 2000-08-11 2002-02-20 Sony Corp 液晶配向膜の形成方法および液晶表示装置の製造方法
JP2002220471A (ja) 2001-01-29 2002-08-09 Jsr Corp ポリシロキサン
CN1916760B (zh) 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002194085A (ja) * 2000-10-20 2002-07-10 Jsr Corp ポリシロキサン
JP2002268227A (ja) * 2001-03-13 2002-09-18 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
JP2002278073A (ja) * 2001-03-16 2002-09-27 Jsr Corp 感放射線性樹脂組成物
KR20050033822A (ko) * 2003-10-07 2005-04-13 신에쓰 가가꾸 고교 가부시끼가이샤 감방사선성 수지 조성물 및 이것을 사용한 패턴 형성 방법

Also Published As

Publication number Publication date
TW200626676A (en) 2006-08-01
US7510816B2 (en) 2009-03-31
JP2006106311A (ja) 2006-04-20
TWI318997B (https=) 2010-01-01
US20060073413A1 (en) 2006-04-06
KR20060052006A (ko) 2006-05-19

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