JP2006106311A - ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法 - Google Patents

ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法 Download PDF

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Publication number
JP2006106311A
JP2006106311A JP2004292290A JP2004292290A JP2006106311A JP 2006106311 A JP2006106311 A JP 2006106311A JP 2004292290 A JP2004292290 A JP 2004292290A JP 2004292290 A JP2004292290 A JP 2004292290A JP 2006106311 A JP2006106311 A JP 2006106311A
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JP
Japan
Prior art keywords
group
resist composition
acid
bis
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004292290A
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English (en)
Japanese (ja)
Inventor
Katsuya Takemura
勝也 竹村
Kazumi Noda
和美 野田
Yoichi Osawa
洋一 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2004292290A priority Critical patent/JP2006106311A/ja
Priority to TW094134719A priority patent/TW200626676A/zh
Priority to KR1020050093000A priority patent/KR100994903B1/ko
Priority to US11/242,270 priority patent/US7510816B2/en
Publication of JP2006106311A publication Critical patent/JP2006106311A/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004292290A 2004-10-05 2004-10-05 ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法 Pending JP2006106311A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004292290A JP2006106311A (ja) 2004-10-05 2004-10-05 ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法
TW094134719A TW200626676A (en) 2004-10-05 2005-10-04 Silicon-containing resist composition and method for forming pattern by using the same
KR1020050093000A KR100994903B1 (ko) 2004-10-05 2005-10-04 규소 함유 레지스트 조성물 및 이것을 이용한 패턴 형성방법
US11/242,270 US7510816B2 (en) 2004-10-05 2005-10-04 Silicon-containing resist composition and patterning process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004292290A JP2006106311A (ja) 2004-10-05 2004-10-05 ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
JP2006106311A true JP2006106311A (ja) 2006-04-20

Family

ID=36125943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004292290A Pending JP2006106311A (ja) 2004-10-05 2004-10-05 ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法

Country Status (4)

Country Link
US (1) US7510816B2 (https=)
JP (1) JP2006106311A (https=)
KR (1) KR100994903B1 (https=)
TW (1) TW200626676A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007212941A (ja) * 2006-02-13 2007-08-23 Shin Etsu Chem Co Ltd レジスト組成物並びにこれを用いたパターン形成方法
WO2008001782A1 (fr) * 2006-06-28 2008-01-03 Tokyo Ohka Kogyo Co., Ltd. Composition de résine photosensible et procédé de formation d'un motif
US8349533B2 (en) 2008-11-07 2013-01-08 Shin-Etsu Chemical Co., Ltd. Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
US8367295B2 (en) 2007-05-02 2013-02-05 Shin-Etsu Chemical Co., Ltd. Preparation process of chemically amplified resist composition
JP2014115438A (ja) * 2012-12-10 2014-06-26 Jsr Corp 表示素子用感放射線性樹脂組成物、硬化膜、硬化膜の製造方法、半導体素子および表示素子
KR20240065082A (ko) 2021-09-24 2024-05-14 도레이 카부시키가이샤 경화막 형성용 실록산 수지 조성물, 경화막 및 폴리실록산의 제조 방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4488215B2 (ja) * 2004-08-19 2010-06-23 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
JP4600678B2 (ja) * 2006-02-13 2010-12-15 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
DE602007000498D1 (de) * 2006-04-11 2009-03-12 Shinetsu Chemical Co Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren
WO2010086850A2 (en) 2009-01-29 2010-08-05 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
KR101036803B1 (ko) * 2009-07-20 2011-05-25 서울대학교산학협력단 전자빔 리소그라피용 레지스트 및 전자빔 리소그라피용 레지스트 현상방법
TWI521018B (zh) * 2010-07-14 2016-02-11 Jsr股份有限公司 Poly Silicon alumoxane composition and pattern forming method
KR20210099692A (ko) * 2020-02-04 2021-08-13 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 포토리소그래피 방법 및 이를 이용한 반도체 소자의 제조 방법
CN119631021A (zh) * 2023-06-30 2025-03-14 潍坊星泰克微电子材料有限公司 使用硅光致抗蚀剂的光刻方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2906999B2 (ja) 1994-04-26 1999-06-21 信越化学工業株式会社 レジスト材料
JP3830183B2 (ja) 1995-09-29 2006-10-04 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
JP3587413B2 (ja) 1995-12-20 2004-11-10 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JP3798458B2 (ja) 1996-02-02 2006-07-19 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
JP3879139B2 (ja) 1996-05-08 2007-02-07 住友化学株式会社 グリオキシム系エステル、その製法および用途
TW432257B (en) 1997-01-31 2001-05-01 Shinetsu Chemical Co High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
JP3505990B2 (ja) 1997-01-31 2004-03-15 信越化学工業株式会社 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
KR100452670B1 (ko) 1997-08-06 2005-10-11 신에쓰 가가꾸 고교 가부시끼가이샤 고분자실리콘화합물,레지스트재료및패턴형성방법
JP3533951B2 (ja) 1997-08-06 2004-06-07 信越化学工業株式会社 高分子シリコーン化合物、レジスト材料及びパターン形成方法
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP2001215714A (ja) 2000-02-02 2001-08-10 Fuji Photo Film Co Ltd 感放射線性樹脂組成物
JP2002055346A (ja) 2000-08-11 2002-02-20 Sony Corp 液晶配向膜の形成方法および液晶表示装置の製造方法
JP2002194085A (ja) * 2000-10-20 2002-07-10 Jsr Corp ポリシロキサン
JP2002220471A (ja) 2001-01-29 2002-08-09 Jsr Corp ポリシロキサン
JP4061454B2 (ja) * 2001-03-13 2008-03-19 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4534371B2 (ja) * 2001-03-16 2010-09-01 Ｊｓｒ株式会社 感放射線性樹脂組成物
CN1916760B (zh) 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
JP3826777B2 (ja) 2001-12-05 2006-09-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4192068B2 (ja) * 2003-10-07 2008-12-03 信越化学工業株式会社 感放射線性樹脂組成物並びにこれを用いたパターン形成方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007212941A (ja) * 2006-02-13 2007-08-23 Shin Etsu Chem Co Ltd レジスト組成物並びにこれを用いたパターン形成方法
WO2008001782A1 (fr) * 2006-06-28 2008-01-03 Tokyo Ohka Kogyo Co., Ltd. Composition de résine photosensible et procédé de formation d'un motif
KR101057605B1 (ko) 2006-06-28 2011-08-18 도오꾜오까고오교 가부시끼가이샤 감광성 수지 조성물 및 패턴 형성 방법
JP4943428B2 (ja) * 2006-06-28 2012-05-30 東京応化工業株式会社 感光性樹脂組成物及びパターン形成方法
US8367295B2 (en) 2007-05-02 2013-02-05 Shin-Etsu Chemical Co., Ltd. Preparation process of chemically amplified resist composition
US8349533B2 (en) 2008-11-07 2013-01-08 Shin-Etsu Chemical Co., Ltd. Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
JP2014115438A (ja) * 2012-12-10 2014-06-26 Jsr Corp 表示素子用感放射線性樹脂組成物、硬化膜、硬化膜の製造方法、半導体素子および表示素子
KR20240065082A (ko) 2021-09-24 2024-05-14 도레이 카부시키가이샤 경화막 형성용 실록산 수지 조성물, 경화막 및 폴리실록산의 제조 방법

Also Published As

Publication number Publication date
KR100994903B1 (ko) 2010-11-16
TW200626676A (en) 2006-08-01
US7510816B2 (en) 2009-03-31
TWI318997B (https=) 2010-01-01
US20060073413A1 (en) 2006-04-06
KR20060052006A (ko) 2006-05-19

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