KR100985272B1 - 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법 - Google Patents
집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법 Download PDFInfo
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- KR100985272B1 KR100985272B1 KR1020047011109A KR20047011109A KR100985272B1 KR 100985272 B1 KR100985272 B1 KR 100985272B1 KR 1020047011109 A KR1020047011109 A KR 1020047011109A KR 20047011109 A KR20047011109 A KR 20047011109A KR 100985272 B1 KR100985272 B1 KR 100985272B1
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- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
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US7514709B2 (en) * | 2003-04-11 | 2009-04-07 | Silecs Oy | Organo-silsesquioxane polymers for forming low-k dielectrics |
TWI220774B (en) * | 2003-11-03 | 2004-09-01 | Univ Nat Sun Yat Sen | Method for patterning low dielectric constant film and method for manufacturing dual damascene structure |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
EP1711550B1 (en) * | 2003-12-23 | 2010-12-01 | Silecs OY | Adamantyl monomers and polymers for low-k-dielectric applications |
US7504470B2 (en) | 2004-08-31 | 2009-03-17 | Silecs Oy | Polyorganosiloxane dielectric materials |
US7332822B2 (en) * | 2004-11-12 | 2008-02-19 | Delphi Technologies, Inc. | Flip chip system with organic/inorganic hybrid underfill composition |
US20060199301A1 (en) * | 2005-03-07 | 2006-09-07 | Basheer Rafil A | Methods of making a curable composition having low coefficient of thermal expansion and an integrated circuit and a curable composition and integrated circuit made there from |
TW200736855A (en) * | 2006-03-22 | 2007-10-01 | Quanta Display Inc | Method of fabricating photoresist thinner |
JP4407673B2 (ja) * | 2006-07-10 | 2010-02-03 | セイコーエプソン株式会社 | バンク構造、電子回路、及び電子デバイスの製造方法、並びにパターン形成方法 |
US7501353B2 (en) * | 2006-12-22 | 2009-03-10 | International Business Machines Corporation | Method of formation of a damascene structure utilizing a protective film |
TWI434891B (zh) * | 2007-02-22 | 2014-04-21 | Silecs Oy | 積體電路用高矽含量矽氧烷聚合物 |
KR100881458B1 (ko) * | 2007-02-23 | 2009-02-06 | 삼성전자주식회사 | 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법 |
US20080206997A1 (en) * | 2007-02-26 | 2008-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
JP5330697B2 (ja) * | 2007-03-19 | 2013-10-30 | 株式会社リコー | 機能素子のパッケージ及びその製造方法 |
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EP1490454A2 (en) | 2004-12-29 |
EP1490454A4 (en) | 2010-03-17 |
AU2003216067A1 (en) | 2003-09-02 |
JP4495464B2 (ja) | 2010-07-07 |
US20060131753A1 (en) | 2006-06-22 |
KR20040075089A (ko) | 2004-08-26 |
US7479462B2 (en) | 2009-01-20 |
US20040012089A1 (en) | 2004-01-22 |
WO2003063205A2 (en) | 2003-07-31 |
EP1490454B1 (en) | 2012-08-15 |
US20060057801A1 (en) | 2006-03-16 |
US20030186494A1 (en) | 2003-10-02 |
JP2005516391A (ja) | 2005-06-02 |
US7060634B2 (en) | 2006-06-13 |
US6974970B2 (en) | 2005-12-13 |
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