KR100985272B1 - 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법 - Google Patents

집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법 Download PDF

Info

Publication number
KR100985272B1
KR100985272B1 KR1020047011109A KR20047011109A KR100985272B1 KR 100985272 B1 KR100985272 B1 KR 100985272B1 KR 1020047011109 A KR1020047011109 A KR 1020047011109A KR 20047011109 A KR20047011109 A KR 20047011109A KR 100985272 B1 KR100985272 B1 KR 100985272B1
Authority
KR
South Korea
Prior art keywords
delete delete
solution
mol
solvent
compound
Prior art date
Application number
KR1020047011109A
Other languages
English (en)
Korean (ko)
Other versions
KR20040075089A (ko
Inventor
주하 란타라
제이슨 레이드
테무 토르마넨
눈가바람 선다람 비스와나탄
아토 엘. 티. 마니넨
Original Assignee
질렉스 오와이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 질렉스 오와이 filed Critical 질렉스 오와이
Publication of KR20040075089A publication Critical patent/KR20040075089A/ko
Application granted granted Critical
Publication of KR100985272B1 publication Critical patent/KR100985272B1/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312Organic layers, e.g. photoresist
    • H01L21/3121Layers comprising organo-silicon compounds
    • H01L21/3122Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835Combinations of two or more different dielectric layers having a low dielectric constant
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005Formation and after-treatment of dielectrics
    • H01L2221/101Forming openings in dielectrics
    • H01L2221/1015Forming openings in dielectrics for dual damascene structures
    • H01L2221/1031Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
KR1020047011109A 2002-01-17 2003-01-17 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법 KR100985272B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US34995502P 2002-01-17 2002-01-17
US60/349,955 2002-01-17
US39541802P 2002-07-13 2002-07-13
US60/395,418 2002-07-13
US41457802P 2002-09-27 2002-09-27
US60/414,578 2002-09-27
PCT/US2003/001490 WO2003063205A2 (en) 2002-01-17 2003-01-17 Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications

Publications (2)

Publication Number Publication Date
KR20040075089A KR20040075089A (ko) 2004-08-26
KR100985272B1 true KR100985272B1 (ko) 2010-10-04

Family

ID=36572112

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047011109A KR100985272B1 (ko) 2002-01-17 2003-01-17 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법

Country Status (6)

Country Link
US (4) US6974970B2 (US07060634-20060613-C00009.png)
EP (1) EP1490454B1 (US07060634-20060613-C00009.png)
JP (1) JP4495464B2 (US07060634-20060613-C00009.png)
KR (1) KR100985272B1 (US07060634-20060613-C00009.png)
AU (1) AU2003216067A1 (US07060634-20060613-C00009.png)
WO (1) WO2003063205A2 (US07060634-20060613-C00009.png)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498464B1 (ko) * 2002-11-22 2005-07-01 삼성전자주식회사 불소 함유 감광성 폴리머, 이를 포함하는 레지스트 조성물및 레지스트 조성물을 이용한 패턴 형성 방법
US7514709B2 (en) * 2003-04-11 2009-04-07 Silecs Oy Organo-silsesquioxane polymers for forming low-k dielectrics
TWI220774B (en) * 2003-11-03 2004-09-01 Univ Nat Sun Yat Sen Method for patterning low dielectric constant film and method for manufacturing dual damascene structure
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
EP1711550B1 (en) * 2003-12-23 2010-12-01 Silecs OY Adamantyl monomers and polymers for low-k-dielectric applications
US7504470B2 (en) 2004-08-31 2009-03-17 Silecs Oy Polyorganosiloxane dielectric materials
US7332822B2 (en) * 2004-11-12 2008-02-19 Delphi Technologies, Inc. Flip chip system with organic/inorganic hybrid underfill composition
US20060199301A1 (en) * 2005-03-07 2006-09-07 Basheer Rafil A Methods of making a curable composition having low coefficient of thermal expansion and an integrated circuit and a curable composition and integrated circuit made there from
TW200736855A (en) * 2006-03-22 2007-10-01 Quanta Display Inc Method of fabricating photoresist thinner
JP4407673B2 (ja) * 2006-07-10 2010-02-03 セイコーエプソン株式会社 バンク構造、電子回路、及び電子デバイスの製造方法、並びにパターン形成方法
US7501353B2 (en) * 2006-12-22 2009-03-10 International Business Machines Corporation Method of formation of a damascene structure utilizing a protective film
TWI434891B (zh) * 2007-02-22 2014-04-21 Silecs Oy 積體電路用高矽含量矽氧烷聚合物
KR100881458B1 (ko) * 2007-02-23 2009-02-06 삼성전자주식회사 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법
US20080206997A1 (en) * 2007-02-26 2008-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5330697B2 (ja) * 2007-03-19 2013-10-30 株式会社リコー 機能素子のパッケージ及びその製造方法
WO2009006272A1 (en) 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US7709370B2 (en) * 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8084862B2 (en) 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US8618663B2 (en) * 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
KR101371998B1 (ko) 2008-01-25 2014-03-07 삼성전자주식회사 절연체 형성용 조성물 및 이를 이용하는 유기 절연체
US8029971B2 (en) * 2008-03-13 2011-10-04 International Business Machines Corporation Photopatternable dielectric materials for BEOL applications and methods for use
US8476368B2 (en) 2008-04-28 2013-07-02 Basf Se Low-k dielectrics obtainable by twin polymerization
JP5096233B2 (ja) * 2008-05-30 2012-12-12 信越化学工業株式会社 有機酸化ケイ素系微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
US20110068332A1 (en) * 2008-08-04 2011-03-24 The Trustees Of Princeton University Hybrid Dielectric Material for Thin Film Transistors
CN102113120B (zh) * 2008-08-04 2014-10-22 普林斯顿大学理事会 用于薄膜晶体管的杂化的介电材料
US7968975B2 (en) * 2008-08-08 2011-06-28 International Business Machines Corporation Metal wiring structure for integration with through substrate vias
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP5675581B2 (ja) * 2011-12-27 2015-02-25 東レ・ダウコーニング株式会社 有機珪素化合物の製造方法
KR101567702B1 (ko) * 2014-06-27 2015-11-10 재단법인 다차원 스마트 아이티 융합시스템 연구단 듀얼 애퍼처 필터 및 그 제작 방법
US9711351B2 (en) * 2014-09-11 2017-07-18 Asm Ip Holding B.V. Process for densifying nitride film
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR20230117645A (ko) 2017-04-26 2023-08-08 오티아이 루미오닉스 인크. 표면의 코팅을 패턴화하는 방법 및 패턴화된 코팅을포함하는 장치
JP6848825B2 (ja) * 2017-11-20 2021-03-24 信越化学工業株式会社 光硬化性組成物およびその硬化物
US11086048B1 (en) * 2020-02-07 2021-08-10 HyperLight Corporation Lithium niobate devices fabricated using deep ultraviolet radiation
US11899293B2 (en) * 2020-02-07 2024-02-13 HyperLight Corporation Electro optical devices fabricated using deep ultraviolet radiation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001164184A (ja) * 1999-12-10 2001-06-19 Fujitsu Ltd 被覆形成用塗布液及び被覆膜及びそれを用いた半導体装置
JP2001287910A (ja) 2000-04-04 2001-10-16 Asahi Kasei Corp 多孔質ケイ素酸化物塗膜の製造方法
JP2001329216A (ja) 2000-05-22 2001-11-27 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2002003783A (ja) 2000-04-17 2002-01-09 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
DE3278567D1 (en) 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
US4507384A (en) 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
US4983419A (en) 1988-08-05 1991-01-08 Siemens Aktiengesellschaft Method for generating thin layers on a silicone base
JPH0821579B2 (ja) * 1989-04-19 1996-03-04 旭硝子株式会社 半導体素子・集積回路装置
JP2718231B2 (ja) 1990-01-10 1998-02-25 三菱電機株式会社 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法
US5449553A (en) * 1992-03-06 1995-09-12 The United States Of America As Represented By The Secretary Of The Navy Nontoxic antifouling systems
JP4082626B2 (ja) * 1996-11-19 2008-04-30 松下電器産業株式会社 層間絶縁膜形成用材料及び層間絶縁膜
EP0849796A3 (en) * 1996-12-17 1999-09-01 Texas Instruments Incorporated Improvements in or relating to integrated circuits
JP3919862B2 (ja) * 1996-12-28 2007-05-30 Azエレクトロニックマテリアルズ株式会社 低誘電率シリカ質膜の形成方法及び同シリカ質膜
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6126733A (en) * 1997-10-31 2000-10-03 Alliedsignal Inc. Alcohol based precursors for producing nanoporous silica thin films
JP2000077399A (ja) * 1998-01-21 2000-03-14 Nippon Steel Corp シリカ系多孔質膜およびその製造方法
US20060258176A1 (en) * 1998-02-05 2006-11-16 Asm Japan K.K. Method for forming insulation film
US6448655B1 (en) * 1998-04-28 2002-09-10 International Business Machines Corporation Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
JPH11322992A (ja) * 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
KR100618301B1 (ko) 1998-09-01 2006-08-31 쇼꾸바이 카세이 고교 가부시키가이샤 낮은 유전상수를 지니는 실리카-포함 필름을 형성하기위한 코팅 액체 및 그의 필름으로 코팅된 기질
US6281115B1 (en) * 1998-11-16 2001-08-28 Industrial Technology Research Institute Sidewall protection for a via hole formed in a photosensitive, low dielectric constant layer
JP4739473B2 (ja) 1999-01-28 2011-08-03 日立化成工業株式会社 シリカ系被膜形成用塗布液、シリカ系被膜及びこれを用いた半導体装置
JP2001049184A (ja) * 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001049176A (ja) * 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001049179A (ja) * 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
US6696538B2 (en) * 1999-07-27 2004-02-24 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
JP4427840B2 (ja) * 1999-09-17 2010-03-10 ソニー株式会社 半導体装置及びその製造方法
JP4022802B2 (ja) * 1999-09-29 2007-12-19 Jsr株式会社 膜形成用組成物、膜の形成方法および絶縁膜
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US20040038048A1 (en) * 2000-02-02 2004-02-26 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
JP2002003784A (ja) * 2000-04-17 2002-01-09 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2002026121A (ja) * 2000-06-30 2002-01-25 Tokyo Electron Ltd 半導体装置およびその製造方法、絶縁膜の形成方法
KR100738774B1 (ko) * 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6383912B1 (en) * 2000-10-23 2002-05-07 Honeywell International, Inc. Fabrication method of integrated circuits with multiple low dielectric-constant intermetal dielectrics
JP4863182B2 (ja) * 2002-01-31 2012-01-25 東ソー株式会社 有機シラン化合物を含んでなる絶縁膜用材料、その製造方法および半導体デバイス

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001164184A (ja) * 1999-12-10 2001-06-19 Fujitsu Ltd 被覆形成用塗布液及び被覆膜及びそれを用いた半導体装置
JP2001287910A (ja) 2000-04-04 2001-10-16 Asahi Kasei Corp 多孔質ケイ素酸化物塗膜の製造方法
JP2002003783A (ja) 2000-04-17 2002-01-09 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2001329216A (ja) 2000-05-22 2001-11-27 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜

Also Published As

Publication number Publication date
WO2003063205A3 (en) 2004-06-03
EP1490454A2 (en) 2004-12-29
EP1490454A4 (en) 2010-03-17
AU2003216067A1 (en) 2003-09-02
JP4495464B2 (ja) 2010-07-07
US20060131753A1 (en) 2006-06-22
KR20040075089A (ko) 2004-08-26
US7479462B2 (en) 2009-01-20
US20040012089A1 (en) 2004-01-22
WO2003063205A2 (en) 2003-07-31
EP1490454B1 (en) 2012-08-15
US20060057801A1 (en) 2006-03-16
US20030186494A1 (en) 2003-10-02
JP2005516391A (ja) 2005-06-02
US7060634B2 (en) 2006-06-13
US6974970B2 (en) 2005-12-13

Similar Documents

Publication Publication Date Title
KR100985272B1 (ko) 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법
US7473650B2 (en) Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
US20100215839A1 (en) Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits
US20090278254A1 (en) Dielectric materials and methods for integrated circuit applications
US20040012061A1 (en) Materials and methods for forming hybrid organic-inorganic anti-stiction materials for micro-electromechanical systems
KR101523393B1 (ko) 규소를 주성분으로 하는 반사 방지 코팅 조성물
JP3739331B2 (ja) シロキサン系樹脂およびこれを用いた半導体層間絶縁膜の形成方法
US7410914B2 (en) Process for producing low-k dielectric films
US20060046516A1 (en) Repair of carbon depletion in low-k dielectric films
KR102611310B1 (ko) 규소 함유층 형성 조성물 및 그것을 이용한 패턴을 가지는 기판의 제조 방법
KR20090127140A (ko) 집적 회로용의 실리콘 고함량 실록산 폴리머
JPH10150033A (ja) 層間絶縁膜形成用材料及び層間絶縁膜
JP2004536924A (ja) シロキサン樹脂
US20060180900A1 (en) Organo-silsesquioxane polymers for forming low-k dielectrics
US20040115341A1 (en) Adhesion promoter and wetting agent
WO2003057703A1 (en) Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
JP4380229B2 (ja) 新規化合物およびその用途
JP2006245458A (ja) 絶縁膜付基板の製造方法
JP2000021872A (ja) 低誘電率樹脂組成物、低誘電率絶縁膜形成方法および半導体装置の製造方法
WO2004090936A2 (en) Low-k dielectric material

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130919

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20150918

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20170922

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20180921

Year of fee payment: 9