KR100980236B1 - 가스 공급 유닛 - Google Patents
가스 공급 유닛 Download PDFInfo
- Publication number
- KR100980236B1 KR100980236B1 KR1020080020372A KR20080020372A KR100980236B1 KR 100980236 B1 KR100980236 B1 KR 100980236B1 KR 1020080020372 A KR1020080020372 A KR 1020080020372A KR 20080020372 A KR20080020372 A KR 20080020372A KR 100980236 B1 KR100980236 B1 KR 100980236B1
- Authority
- KR
- South Korea
- Prior art keywords
- valve
- pressure
- control valve
- fluid control
- shut
- Prior art date
Links
- 239000012530 fluid Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims description 26
- 230000005856 abnormality Effects 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 6
- 230000000087 stabilizing effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 114
- 238000012545 processing Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 8
- 230000001105 regulatory effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7762—Fluid pressure type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86485—Line condition change responsive release of valve
Abstract
Description
Claims (5)
- 매스 플로우 컨트롤러(14),상기 매스 플로우 컨트롤러(14)에 접속하는 제1 유체 제어 밸브(15),상기 제1 유체 제어 밸브(15)에 병렬이 되도록 상기 매스 플로우 컨트롤러와 접속된 제2 유체 제어 밸브(17), 및상기 제2 유체 제어 밸브(17)의 이차 측에 배치된 제3 유체 제어 밸브(19, 82)를 포함하며,상기 제3 유체 제어 밸브(19, 82)의 밸브 개방 정도는, 상기 제1 유체 제어 밸브(15)의 2차 압력과 상기 제2 유체 제어 밸브(17)의 2차 압력의 압력차를 ±20kPa의 범위 내가 되도록 조정가능한 것을 특징으로 하는 가스 공급 유닛.
- 제1항에 있어서,상기 제1 유체 제어 밸브(15)의 2차 압력과 상기 제2 유체 제어 밸브(17)의 2차 압력의 압력차를 측정하는 압력차 측정 수단(41, 72)을 포함하며,상기 제3 유체 제어 밸브(19)는 상기 압력차 측정 수단(41, 72)의 측정 결과에 기초하여 동작하는 것을 특징으로 하는 가스 공급 유닛.
- 매스 플로우 컨트롤러(14),상기 매스 플로우 컨트롤러(14)에 접속하는 제1 유체 제어 밸브(15),상기 제1 유체 제어 밸브(15)에 병렬이 되도록 상기 매스 플로우 컨트롤러와 접속된 제2 유체 제어 밸브(17),상기 제2 유체 제어 밸브(17)의 이차 측에 배치된 제3 유체 제어 밸브(19, 82) 및상기 제1 유체 제어 밸브(15)의 2차 측에 배치되는 제4 유체 제어 밸브(62)를 포함하며,상기 제3 유체 제어 밸브(19)와 상기 제4 유체 제어 밸브(62)의 밸브 개방 정도는, 상기 제1 유체 제어 밸브(15)의 2차 압력과 상기 제2 유체 제어 밸브(17)의 2차 압력의 압력차에 기초하여 조정가능하고,상기 제3 유체 제어 밸브(19)와 상기 제4 유체 제어 밸브(62)에 의해, 상기 제1 유체 제어 밸브(15)의 2차 압력과 상기 제2 유체 제어 밸브(17)의 2차 압력을 조정하는 것을 특징으로 하는 가스 공급 유닛.
- 제1항에 있어서,상기 제1 유체 제어 밸브(15)의 2차 압력 또는 제2 유체 제어 밸브(17)의 2차 압력에 발생한 이상을 통보하는 이상 통보 수단(43)을 포함하는 것을 특징으로 하는 가스 공급 유닛.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007069194A JP5134841B2 (ja) | 2007-03-16 | 2007-03-16 | ガス供給ユニット |
JPJP-P-2007-00069194 | 2007-03-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080084612A KR20080084612A (ko) | 2008-09-19 |
KR100980236B1 true KR100980236B1 (ko) | 2010-09-09 |
Family
ID=39761447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080020372A KR100980236B1 (ko) | 2007-03-16 | 2008-03-05 | 가스 공급 유닛 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080223455A1 (ko) |
JP (1) | JP5134841B2 (ko) |
KR (1) | KR100980236B1 (ko) |
TW (1) | TWI381258B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4870633B2 (ja) * | 2007-08-29 | 2012-02-08 | シーケーディ株式会社 | 流量検定システム及び流量検定方法 |
JP5433660B2 (ja) * | 2011-10-12 | 2014-03-05 | Ckd株式会社 | ガス流量監視システム |
JP5809012B2 (ja) * | 2011-10-14 | 2015-11-10 | 株式会社堀場エステック | 流量制御装置、流量測定機構、又は、当該流量測定機構を備えた流量制御装置に用いられる診断装置及び診断用プログラム |
JP5740525B2 (ja) * | 2012-03-09 | 2015-06-24 | 株式会社日立ハイテクノロジーズ | イオン化方法、イオン化装置及び質量分析システム。 |
US9934956B2 (en) * | 2015-07-27 | 2018-04-03 | Lam Research Corporation | Time multiplexed chemical delivery system |
CN107943116A (zh) * | 2017-11-08 | 2018-04-20 | 君泰创新(北京)科技有限公司 | 用于吹扫氙灯的氮气流量控制系统及方法 |
JP7398886B2 (ja) * | 2018-07-02 | 2023-12-15 | 東京エレクトロン株式会社 | 流量制御器、ガス供給系及び流量制御方法 |
JP7134020B2 (ja) * | 2018-08-17 | 2022-09-09 | 東京エレクトロン株式会社 | バルブ装置、処理装置、および制御方法 |
KR102489515B1 (ko) * | 2018-12-03 | 2023-01-17 | 주식회사 원익아이피에스 | 가스공급장치 및 가스공급제어방법 |
JP6966499B2 (ja) | 2019-03-06 | 2021-11-17 | Ckd株式会社 | ガス供給ユニット及びガス供給方法 |
DE102019215319A1 (de) * | 2019-10-07 | 2021-04-08 | Leybold Gmbh | Einlasssystem für ein Massenspektrometer |
Citations (2)
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JP2004309421A (ja) * | 2003-04-10 | 2004-11-04 | Ohte Giken Inc | 圧力可変制御装置及び圧力可変制御方法 |
JP2006337346A (ja) * | 2005-06-06 | 2006-12-14 | Ckd Corp | 流量制御機器絶対流量検定システム |
Family Cites Families (11)
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US4717396A (en) * | 1986-09-15 | 1988-01-05 | Phillips Petroleum Company | Floating pressure control for a gas distribution system |
JPH06194203A (ja) * | 1992-12-25 | 1994-07-15 | Hitachi Metals Ltd | 異常診断機能付マスフローコントローラ及びその異常診断方法 |
JP3684307B2 (ja) * | 1998-10-19 | 2005-08-17 | シーケーディ株式会社 | ガス供給制御装置 |
EP1096351A4 (en) * | 1999-04-16 | 2004-12-15 | Fujikin Kk | FLUID SUPPLY DEVICE OF THE PARALLEL BYPASS TYPE, AND METHOD AND DEVICE FOR CONTROLLING THE FLOW OF A VARIABLE FLUID TYPE PRESSURE SYSTEM USED IN SAID DEVICE |
JP2002367911A (ja) * | 2001-06-07 | 2002-12-20 | Sumitomo Chem Co Ltd | 気相成長半導体製造装置及び方法 |
JP3814526B2 (ja) * | 2001-11-29 | 2006-08-30 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
KR100863782B1 (ko) * | 2002-03-08 | 2008-10-16 | 도쿄엘렉트론가부시키가이샤 | 기판처리장치 및 기판처리방법 |
CN101109470A (zh) * | 2002-07-19 | 2008-01-23 | 诚实公司 | 液体流动控制器和精密分配设备及系统 |
JP4454964B2 (ja) * | 2003-06-09 | 2010-04-21 | 東京エレクトロン株式会社 | 分圧制御システム及び流量制御システム |
JP3872776B2 (ja) * | 2003-07-16 | 2007-01-24 | 東京エレクトロン株式会社 | 半導体製造装置及び半導体製造方法 |
US7425350B2 (en) * | 2005-04-29 | 2008-09-16 | Asm Japan K.K. | Apparatus, precursors and deposition methods for silicon-containing materials |
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2007
- 2007-03-16 JP JP2007069194A patent/JP5134841B2/ja active Active
-
2008
- 2008-02-22 TW TW97106227A patent/TWI381258B/zh active
- 2008-03-05 KR KR1020080020372A patent/KR100980236B1/ko active IP Right Grant
- 2008-03-10 US US12/073,786 patent/US20080223455A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004309421A (ja) * | 2003-04-10 | 2004-11-04 | Ohte Giken Inc | 圧力可変制御装置及び圧力可変制御方法 |
JP2006337346A (ja) * | 2005-06-06 | 2006-12-14 | Ckd Corp | 流量制御機器絶対流量検定システム |
Also Published As
Publication number | Publication date |
---|---|
JP2008234027A (ja) | 2008-10-02 |
TWI381258B (zh) | 2013-01-01 |
US20080223455A1 (en) | 2008-09-18 |
TW200844701A (en) | 2008-11-16 |
KR20080084612A (ko) | 2008-09-19 |
JP5134841B2 (ja) | 2013-01-30 |
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