KR100974107B1 - 전자 신호 처리 장치 및 전자 신호 스위치 - Google Patents

전자 신호 처리 장치 및 전자 신호 스위치 Download PDF

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Publication number
KR100974107B1
KR100974107B1 KR1020047013167A KR20047013167A KR100974107B1 KR 100974107 B1 KR100974107 B1 KR 100974107B1 KR 1020047013167 A KR1020047013167 A KR 1020047013167A KR 20047013167 A KR20047013167 A KR 20047013167A KR 100974107 B1 KR100974107 B1 KR 100974107B1
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KR
South Korea
Prior art keywords
switch
diode
internal node
control
main current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047013167A
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English (en)
Korean (ko)
Other versions
KR20040083458A (ko
Inventor
우이텐보가드테우니스에이치
Original Assignee
엔엑스피 비 브이
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Filing date
Publication date
Application filed by 엔엑스피 비 브이 filed Critical 엔엑스피 비 브이
Publication of KR20040083458A publication Critical patent/KR20040083458A/ko
Application granted granted Critical
Publication of KR100974107B1 publication Critical patent/KR100974107B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

Landscapes

  • Electronic Switches (AREA)
  • Burglar Alarm Systems (AREA)
  • Amplifiers (AREA)
  • Stereo-Broadcasting Methods (AREA)
KR1020047013167A 2002-02-25 2003-01-21 전자 신호 처리 장치 및 전자 신호 스위치 Expired - Fee Related KR100974107B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02075739.9 2002-02-25
EP02075739 2002-02-25
PCT/IB2003/000172 WO2003071680A1 (en) 2002-02-25 2003-01-21 High-frequency signal switching

Publications (2)

Publication Number Publication Date
KR20040083458A KR20040083458A (ko) 2004-10-01
KR100974107B1 true KR100974107B1 (ko) 2010-08-04

Family

ID=27741200

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047013167A Expired - Fee Related KR100974107B1 (ko) 2002-02-25 2003-01-21 전자 신호 처리 장치 및 전자 신호 스위치

Country Status (9)

Country Link
US (1) US7268606B2 (enExample)
EP (1) EP1481478B1 (enExample)
JP (1) JP2005518698A (enExample)
KR (1) KR100974107B1 (enExample)
CN (1) CN1288842C (enExample)
AT (1) ATE449461T1 (enExample)
AU (1) AU2003201127A1 (enExample)
DE (1) DE60330121D1 (enExample)
WO (1) WO2003071680A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439905B2 (ja) * 2003-12-25 2010-03-24 パナソニック株式会社 可変アッテネータ回路
CN100546189C (zh) * 2006-05-22 2009-09-30 崇贸科技股份有限公司 高电压源的切换电路
KR101549272B1 (ko) 2007-06-29 2015-09-01 톰슨 라이센싱 루프 쓰루 기능을 갖는 튜너 회로
US8526883B2 (en) 2008-06-13 2013-09-03 Nxp, B.V. RF switch for an RF splitter
US8421651B2 (en) * 2009-04-29 2013-04-16 Sony Corporation Mobile phone with improved keyboard scanning and component reduction and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors
US4628307A (en) * 1984-12-18 1986-12-09 International Business Machines Corp. FET switch for high frequency signals
JPS6393217A (ja) 1986-10-07 1988-04-23 Fuji Electric Co Ltd アナログスイツチ回路
US4808859A (en) * 1987-01-09 1989-02-28 American Electronic Laboratories, Inc. Broadband electronic switch
JP3362931B2 (ja) * 1993-09-30 2003-01-07 ソニー株式会社 アツテネータ回路
JP3425235B2 (ja) * 1994-09-13 2003-07-14 株式会社東芝 可変減衰器
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
JPH0946176A (ja) * 1995-07-27 1997-02-14 Mitsubishi Electric Corp 減衰器
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
WO1999055085A2 (en) 1998-04-16 1999-10-28 Koninklijke Philips Electronics N.V. Video recorder/reproducer apparatus
JP2000114950A (ja) * 1998-10-07 2000-04-21 Murata Mfg Co Ltd Ｓｐｓｔスイッチおよびｓｐｄｔスイッチおよびそれを用いた通信機
US6680640B1 (en) * 1999-11-11 2004-01-20 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US6489856B1 (en) * 2001-09-17 2002-12-03 Tyco Electronics Corporation Digital attenuator with combined bits
US6836159B2 (en) * 2003-03-06 2004-12-28 General Electric Company Integrated high-voltage switching circuit for ultrasound transducer array

Also Published As

Publication number Publication date
WO2003071680A1 (en) 2003-08-28
ATE449461T1 (de) 2009-12-15
US20050118961A1 (en) 2005-06-02
EP1481478B1 (en) 2009-11-18
AU2003201127A1 (en) 2003-09-09
US7268606B2 (en) 2007-09-11
CN1639977A (zh) 2005-07-13
EP1481478A1 (en) 2004-12-01
DE60330121D1 (de) 2009-12-31
CN1288842C (zh) 2006-12-06
KR20040083458A (ko) 2004-10-01
JP2005518698A (ja) 2005-06-23

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