AU2003201127A1 - High-frequency signal switching - Google Patents

High-frequency signal switching

Info

Publication number
AU2003201127A1
AU2003201127A1 AU2003201127A AU2003201127A AU2003201127A1 AU 2003201127 A1 AU2003201127 A1 AU 2003201127A1 AU 2003201127 A AU2003201127 A AU 2003201127A AU 2003201127 A AU2003201127 A AU 2003201127A AU 2003201127 A1 AU2003201127 A1 AU 2003201127A1
Authority
AU
Australia
Prior art keywords
diode
internal node
main current
coupled
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003201127A
Other languages
English (en)
Inventor
Teunis H. Uittenbogaard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of AU2003201127A1 publication Critical patent/AU2003201127A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

Landscapes

  • Electronic Switches (AREA)
  • Burglar Alarm Systems (AREA)
  • Amplifiers (AREA)
  • Stereo-Broadcasting Methods (AREA)
AU2003201127A 2002-02-25 2003-01-21 High-frequency signal switching Abandoned AU2003201127A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02075739.9 2002-02-25
EP02075739 2002-02-25
PCT/IB2003/000172 WO2003071680A1 (en) 2002-02-25 2003-01-21 High-frequency signal switching

Publications (1)

Publication Number Publication Date
AU2003201127A1 true AU2003201127A1 (en) 2003-09-09

Family

ID=27741200

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003201127A Abandoned AU2003201127A1 (en) 2002-02-25 2003-01-21 High-frequency signal switching

Country Status (9)

Country Link
US (1) US7268606B2 (enExample)
EP (1) EP1481478B1 (enExample)
JP (1) JP2005518698A (enExample)
KR (1) KR100974107B1 (enExample)
CN (1) CN1288842C (enExample)
AT (1) ATE449461T1 (enExample)
AU (1) AU2003201127A1 (enExample)
DE (1) DE60330121D1 (enExample)
WO (1) WO2003071680A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439905B2 (ja) * 2003-12-25 2010-03-24 パナソニック株式会社 可変アッテネータ回路
CN100546189C (zh) * 2006-05-22 2009-09-30 崇贸科技股份有限公司 高电压源的切换电路
KR101549272B1 (ko) 2007-06-29 2015-09-01 톰슨 라이센싱 루프 쓰루 기능을 갖는 튜너 회로
US8526883B2 (en) 2008-06-13 2013-09-03 Nxp, B.V. RF switch for an RF splitter
US8421651B2 (en) * 2009-04-29 2013-04-16 Sony Corporation Mobile phone with improved keyboard scanning and component reduction and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors
US4628307A (en) * 1984-12-18 1986-12-09 International Business Machines Corp. FET switch for high frequency signals
JPS6393217A (ja) 1986-10-07 1988-04-23 Fuji Electric Co Ltd アナログスイツチ回路
US4808859A (en) * 1987-01-09 1989-02-28 American Electronic Laboratories, Inc. Broadband electronic switch
JP3362931B2 (ja) * 1993-09-30 2003-01-07 ソニー株式会社 アツテネータ回路
JP3425235B2 (ja) * 1994-09-13 2003-07-14 株式会社東芝 可変減衰器
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
JPH0946176A (ja) * 1995-07-27 1997-02-14 Mitsubishi Electric Corp 減衰器
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
WO1999055085A2 (en) 1998-04-16 1999-10-28 Koninklijke Philips Electronics N.V. Video recorder/reproducer apparatus
JP2000114950A (ja) * 1998-10-07 2000-04-21 Murata Mfg Co Ltd Ｓｐｓｔスイッチおよびｓｐｄｔスイッチおよびそれを用いた通信機
US6680640B1 (en) * 1999-11-11 2004-01-20 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US6489856B1 (en) * 2001-09-17 2002-12-03 Tyco Electronics Corporation Digital attenuator with combined bits
US6836159B2 (en) * 2003-03-06 2004-12-28 General Electric Company Integrated high-voltage switching circuit for ultrasound transducer array

Also Published As

Publication number Publication date
WO2003071680A1 (en) 2003-08-28
ATE449461T1 (de) 2009-12-15
US20050118961A1 (en) 2005-06-02
EP1481478B1 (en) 2009-11-18
US7268606B2 (en) 2007-09-11
CN1639977A (zh) 2005-07-13
EP1481478A1 (en) 2004-12-01
DE60330121D1 (de) 2009-12-31
CN1288842C (zh) 2006-12-06
KR100974107B1 (ko) 2010-08-04
KR20040083458A (ko) 2004-10-01
JP2005518698A (ja) 2005-06-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase