DE60330121D1 - Hochfrequenz-signalschalttechniken - Google Patents

Hochfrequenz-signalschalttechniken

Info

Publication number
DE60330121D1
DE60330121D1 DE60330121T DE60330121T DE60330121D1 DE 60330121 D1 DE60330121 D1 DE 60330121D1 DE 60330121 T DE60330121 T DE 60330121T DE 60330121 T DE60330121 T DE 60330121T DE 60330121 D1 DE60330121 D1 DE 60330121D1
Authority
DE
Germany
Prior art keywords
diode
internal node
main current
coupled
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60330121T
Other languages
English (en)
Inventor
Teunis H Uittenbogaard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60330121D1 publication Critical patent/DE60330121D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

Landscapes

  • Electronic Switches (AREA)
  • Burglar Alarm Systems (AREA)
  • Amplifiers (AREA)
  • Stereo-Broadcasting Methods (AREA)
DE60330121T 2002-02-25 2003-01-21 Hochfrequenz-signalschalttechniken Expired - Lifetime DE60330121D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02075739 2002-02-25
PCT/IB2003/000172 WO2003071680A1 (en) 2002-02-25 2003-01-21 High-frequency signal switching

Publications (1)

Publication Number Publication Date
DE60330121D1 true DE60330121D1 (de) 2009-12-31

Family

ID=27741200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60330121T Expired - Lifetime DE60330121D1 (de) 2002-02-25 2003-01-21 Hochfrequenz-signalschalttechniken

Country Status (9)

Country Link
US (1) US7268606B2 (de)
EP (1) EP1481478B1 (de)
JP (1) JP2005518698A (de)
KR (1) KR100974107B1 (de)
CN (1) CN1288842C (de)
AT (1) ATE449461T1 (de)
AU (1) AU2003201127A1 (de)
DE (1) DE60330121D1 (de)
WO (1) WO2003071680A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439905B2 (ja) * 2003-12-25 2010-03-24 パナソニック株式会社 可変アッテネータ回路
US8519807B2 (en) 2007-06-29 2013-08-27 Thomson Licensing Tuner circuit with loop through function
WO2009150625A1 (en) 2008-06-13 2009-12-17 Nxp B.V. Rf switch for an rf splitter
US8421651B2 (en) * 2009-04-29 2013-04-16 Sony Corporation Mobile phone with improved keyboard scanning and component reduction and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595847A (en) * 1983-10-20 1986-06-17 Telmos, Inc. Bi-directional high voltage analog switch having source to source connected field effect transistors
US4628307A (en) * 1984-12-18 1986-12-09 International Business Machines Corp. FET switch for high frequency signals
JPS6393217A (ja) 1986-10-07 1988-04-23 Fuji Electric Co Ltd アナログスイツチ回路
US4808859A (en) * 1987-01-09 1989-02-28 American Electronic Laboratories, Inc. Broadband electronic switch
JP3362931B2 (ja) * 1993-09-30 2003-01-07 ソニー株式会社 アツテネータ回路
JP3425235B2 (ja) * 1994-09-13 2003-07-14 株式会社東芝 可変減衰器
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
JPH0946176A (ja) * 1995-07-27 1997-02-14 Mitsubishi Electric Corp 減衰器
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
CN1266585A (zh) 1998-04-16 2000-09-13 皇家菲利浦电子有限公司 视频信号记录/复制装置
JP2000114950A (ja) * 1998-10-07 2000-04-21 Murata Mfg Co Ltd Ｓｐｓｔスイッチおよびｓｐｄｔスイッチおよびそれを用いた通信機
US6680640B1 (en) * 1999-11-11 2004-01-20 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US6489856B1 (en) * 2001-09-17 2002-12-03 Tyco Electronics Corporation Digital attenuator with combined bits
US6836159B2 (en) * 2003-03-06 2004-12-28 General Electric Company Integrated high-voltage switching circuit for ultrasound transducer array

Also Published As

Publication number Publication date
EP1481478A1 (de) 2004-12-01
US7268606B2 (en) 2007-09-11
KR20040083458A (ko) 2004-10-01
CN1639977A (zh) 2005-07-13
WO2003071680A1 (en) 2003-08-28
AU2003201127A1 (en) 2003-09-09
JP2005518698A (ja) 2005-06-23
US20050118961A1 (en) 2005-06-02
KR100974107B1 (ko) 2010-08-04
ATE449461T1 (de) 2009-12-15
EP1481478B1 (de) 2009-11-18
CN1288842C (zh) 2006-12-06

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