ATE449461T1 - Hochfrequenz-signalschalttechniken - Google Patents
Hochfrequenz-signalschalttechnikenInfo
- Publication number
- ATE449461T1 ATE449461T1 AT03742616T AT03742616T ATE449461T1 AT E449461 T1 ATE449461 T1 AT E449461T1 AT 03742616 T AT03742616 T AT 03742616T AT 03742616 T AT03742616 T AT 03742616T AT E449461 T1 ATE449461 T1 AT E449461T1
- Authority
- AT
- Austria
- Prior art keywords
- diode
- internal node
- main current
- coupled
- control
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
Landscapes
- Electronic Switches (AREA)
- Burglar Alarm Systems (AREA)
- Stereo-Broadcasting Methods (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02075739 | 2002-02-25 | ||
| PCT/IB2003/000172 WO2003071680A1 (en) | 2002-02-25 | 2003-01-21 | High-frequency signal switching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE449461T1 true ATE449461T1 (de) | 2009-12-15 |
Family
ID=27741200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03742616T ATE449461T1 (de) | 2002-02-25 | 2003-01-21 | Hochfrequenz-signalschalttechniken |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7268606B2 (de) |
| EP (1) | EP1481478B1 (de) |
| JP (1) | JP2005518698A (de) |
| KR (1) | KR100974107B1 (de) |
| CN (1) | CN1288842C (de) |
| AT (1) | ATE449461T1 (de) |
| AU (1) | AU2003201127A1 (de) |
| DE (1) | DE60330121D1 (de) |
| WO (1) | WO2003071680A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4439905B2 (ja) * | 2003-12-25 | 2010-03-24 | パナソニック株式会社 | 可変アッテネータ回路 |
| EP2162986B1 (de) | 2007-06-29 | 2013-02-13 | Thomson Licensing | Tunerschaltung mit durchschleiffunktion |
| US8526883B2 (en) | 2008-06-13 | 2013-09-03 | Nxp, B.V. | RF switch for an RF splitter |
| US8421651B2 (en) * | 2009-04-29 | 2013-04-16 | Sony Corporation | Mobile phone with improved keyboard scanning and component reduction and method |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4595847A (en) * | 1983-10-20 | 1986-06-17 | Telmos, Inc. | Bi-directional high voltage analog switch having source to source connected field effect transistors |
| US4628307A (en) * | 1984-12-18 | 1986-12-09 | International Business Machines Corp. | FET switch for high frequency signals |
| JPS6393217A (ja) | 1986-10-07 | 1988-04-23 | Fuji Electric Co Ltd | アナログスイツチ回路 |
| US4808859A (en) * | 1987-01-09 | 1989-02-28 | American Electronic Laboratories, Inc. | Broadband electronic switch |
| JP3362931B2 (ja) * | 1993-09-30 | 2003-01-07 | ソニー株式会社 | アツテネータ回路 |
| JP3425235B2 (ja) * | 1994-09-13 | 2003-07-14 | 株式会社東芝 | 可変減衰器 |
| US5903178A (en) * | 1994-12-16 | 1999-05-11 | Matsushita Electronics Corporation | Semiconductor integrated circuit |
| JPH08204530A (ja) * | 1995-01-23 | 1996-08-09 | Sony Corp | スイツチ回路 |
| JPH0946176A (ja) * | 1995-07-27 | 1997-02-14 | Mitsubishi Electric Corp | 減衰器 |
| US5777530A (en) * | 1996-01-31 | 1998-07-07 | Matsushita Electric Industrial Co., Ltd. | Switch attenuator |
| WO1999055085A2 (en) | 1998-04-16 | 1999-10-28 | Koninklijke Philips Electronics N.V. | Video recorder/reproducer apparatus |
| JP2000114950A (ja) * | 1998-10-07 | 2000-04-21 | Murata Mfg Co Ltd | Ｓｐｓｔスイッチおよびｓｐｄｔスイッチおよびそれを用いた通信機 |
| US6680640B1 (en) * | 1999-11-11 | 2004-01-20 | Broadcom Corporation | High linearity large bandwidth, switch insensitive, programmable gain attenuator |
| US6489856B1 (en) * | 2001-09-17 | 2002-12-03 | Tyco Electronics Corporation | Digital attenuator with combined bits |
| US6836159B2 (en) * | 2003-03-06 | 2004-12-28 | General Electric Company | Integrated high-voltage switching circuit for ultrasound transducer array |
-
2003
- 2003-01-21 WO PCT/IB2003/000172 patent/WO2003071680A1/en active Application Filing
- 2003-01-21 EP EP03742616A patent/EP1481478B1/de not_active Expired - Lifetime
- 2003-01-21 CN CNB038045036A patent/CN1288842C/zh not_active Expired - Fee Related
- 2003-01-21 DE DE60330121T patent/DE60330121D1/de not_active Expired - Lifetime
- 2003-01-21 AU AU2003201127A patent/AU2003201127A1/en not_active Abandoned
- 2003-01-21 AT AT03742616T patent/ATE449461T1/de not_active IP Right Cessation
- 2003-01-21 JP JP2003570466A patent/JP2005518698A/ja active Pending
- 2003-01-21 KR KR1020047013167A patent/KR100974107B1/ko not_active IP Right Cessation
- 2003-01-21 US US10/505,269 patent/US7268606B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003071680A1 (en) | 2003-08-28 |
| US7268606B2 (en) | 2007-09-11 |
| DE60330121D1 (de) | 2009-12-31 |
| AU2003201127A1 (en) | 2003-09-09 |
| CN1639977A (zh) | 2005-07-13 |
| EP1481478B1 (de) | 2009-11-18 |
| KR100974107B1 (ko) | 2010-08-04 |
| KR20040083458A (ko) | 2004-10-01 |
| EP1481478A1 (de) | 2004-12-01 |
| JP2005518698A (ja) | 2005-06-23 |
| US20050118961A1 (en) | 2005-06-02 |
| CN1288842C (zh) | 2006-12-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |