KR100972631B1 - 데이터 저장 장치의 제조 방법 - Google Patents
데이터 저장 장치의 제조 방법 Download PDFInfo
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- KR100972631B1 KR100972631B1 KR1020030038615A KR20030038615A KR100972631B1 KR 100972631 B1 KR100972631 B1 KR 100972631B1 KR 1020030038615 A KR1020030038615 A KR 1020030038615A KR 20030038615 A KR20030038615 A KR 20030038615A KR 100972631 B1 KR100972631 B1 KR 100972631B1
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 58
- 230000006911 nucleation Effects 0.000 title abstract description 36
- 238000010899 nucleation Methods 0.000 title abstract description 36
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000013500 data storage Methods 0.000 claims description 3
- 230000005415 magnetization Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000013598 vector Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 강자성 데이터층(ferromagnetic data layers)(54)의 어레이(12)를 형성하는 단계를 포함하는 데이터 저장 장치(10)의 제조 방법(114∼116)에 있어서,각 층(54)은 제 1 및 제 2 영역들(58, 60)을 갖되, 상기 제1 영역(58)은 상기 각 데이터층(54)의 가장자리가 리세스된 디벳(divets)이고,상기 제 1 영역(58)은 상기 제 2 영역(60)보다 더 낮은 스위칭 임계점(switching threshold)을 가지고,상기 제 1 영역(58)은 상기 제 2 영역(60)보다 더 작고,상기 제 1 영역(58)은 상기 어레이에서 상기 데이터층 상의 동일한 위치에 위치되는 데이터 저장 장치의 제조 방법.
- 강자성 데이터층(ferromagnetic data layers)(54)의 어레이(12)를 형성하는 단계를 포함하는 데이터 저장 장치(10)의 제조 방법(114∼116)에 있어서,각 층(54)은 제 1 및 제 2 영역들(58, 60)을 갖되, 상기 제1 영역(58)은 상기 각 데이터층(54)의 가장자리로부터의 돌출부(protrusions)이고,상기 제 1 영역(58)은 상기 제 2 영역(60)보다 더 낮은 스위칭 임계점(switching threshold)을 가지고,상기 제 1 영역(58)은 상기 제 2 영역(60)보다 더 작고,상기 제 1 영역(58)은 상기 어레이에서 상기 데이터층 상의 동일한 위치에 위치되는 데이터 저장 장치의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1 영역(58)은 상기 데이터층(54)의 모서리(corners)에 위치되는 데이터 저장 장치의 제조 방법.
- 삭제
- 제 1 항 또는 제 2 항에 있어서,각 데이터층(54)은 하나 이상의 제 1 영역(58)을 갖는 데이터 저장 장치의 제조 방법.
- 제 5 항에 있어서,각 데이터층(54)은 제 1 영역(58)의 대칭적인 구성(symmetric arrangement)을 갖는 데이터 저장 장치의 제조 방법.
- 제 5 항에 있어서,각 데이터층(54)은 제 1 영역(58)의 비대칭적 구성(non-symmetric arrangement)을 갖는 데이터 저장 장치의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1 영역(58)은 상기 어레이(12)에서 균일한 크기 및 형상을 가지는 데이터 저장 장치의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1 영역(58)은 비트 형성 도중에 형성되는 데이터 저장 장치의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,추가적인 자기 터널 접합층(magnetic tunnel junction layers)(52, 56)을 형성하는 단계를 더 포함하는 데이터 저장 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/173,195 | 2002-06-17 | ||
US10/173,195 US6803616B2 (en) | 2002-06-17 | 2002-06-17 | Magnetic memory element having controlled nucleation site in data layer |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040002557A KR20040002557A (ko) | 2004-01-07 |
KR100972631B1 true KR100972631B1 (ko) | 2010-07-28 |
Family
ID=29717779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030038615A KR100972631B1 (ko) | 2002-06-17 | 2003-06-16 | 데이터 저장 장치의 제조 방법 |
Country Status (7)
Country | Link |
---|---|
US (3) | US6803616B2 (ko) |
EP (1) | EP1376600B1 (ko) |
JP (1) | JP4886963B2 (ko) |
KR (1) | KR100972631B1 (ko) |
CN (1) | CN100442384C (ko) |
DE (1) | DE60301097T2 (ko) |
TW (1) | TW200400595A (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6927995B2 (en) * | 2001-08-09 | 2005-08-09 | Hewlett-Packard Development Company, L.P. | Multi-bit MRAM device with switching nucleation sites |
US6803616B2 (en) * | 2002-06-17 | 2004-10-12 | Hewlett-Packard Development Company, L.P. | Magnetic memory element having controlled nucleation site in data layer |
JP4630747B2 (ja) * | 2005-07-15 | 2011-02-09 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
JP4594694B2 (ja) * | 2004-10-08 | 2010-12-08 | 株式会社東芝 | 磁気抵抗効果素子 |
JP2006135292A (ja) * | 2004-10-08 | 2006-05-25 | Toshiba Corp | 磁気抵抗効果素子 |
JP4657836B2 (ja) * | 2005-07-12 | 2011-03-23 | Necトーキン株式会社 | インピーダンス素子を用いた磁性薄膜素子 |
JP2007027415A (ja) * | 2005-07-15 | 2007-02-01 | Toshiba Corp | 磁気記憶装置 |
US8084835B2 (en) * | 2006-10-20 | 2011-12-27 | Avalanche Technology, Inc. | Non-uniform switching based non-volatile magnetic based memory |
JP2012244051A (ja) * | 2011-05-23 | 2012-12-10 | Fujitsu Ltd | 磁気抵抗素子及び磁気記憶装置 |
CN111933789B (zh) * | 2020-08-11 | 2022-07-08 | 兰州大学 | 一种多态存储器、其制备方法和存储方法及人工突触器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150237A (ja) | 1998-07-10 | 2000-05-30 | Interuniv Micro Electronica Centrum Vzw | スピンバルブ構造とその製造法 |
US6205051B1 (en) * | 1998-09-04 | 2001-03-20 | Hewlett Packard Company | Stabilized magnetic memory cell |
JP2001313377A (ja) | 2000-03-09 | 2001-11-09 | Hewlett Packard Co <Hp> | メモリセル装置及びその製造方法 |
KR20020000119A (ko) * | 2000-06-20 | 2002-01-04 | 파트릭 제이. 바렛트 | 메모리 셀 장치 및 메모리 장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000195250A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
US6538921B2 (en) * | 2000-08-17 | 2003-03-25 | Nve Corporation | Circuit selection of magnetic memory cells and related cell structures |
JP4458703B2 (ja) * | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
US6803616B2 (en) * | 2002-06-17 | 2004-10-12 | Hewlett-Packard Development Company, L.P. | Magnetic memory element having controlled nucleation site in data layer |
US6570783B1 (en) * | 2001-11-15 | 2003-05-27 | Micron Technology, Inc. | Asymmetric MRAM cell and bit design for improving bit yield |
US6798691B1 (en) * | 2002-03-07 | 2004-09-28 | Silicon Magnetic Systems | Asymmetric dot shape for increasing select-unselect margin in MRAM devices |
-
2002
- 2002-06-17 US US10/173,195 patent/US6803616B2/en not_active Expired - Lifetime
- 2002-12-23 TW TW091137048A patent/TW200400595A/zh unknown
-
2003
- 2003-04-17 CN CNB031231330A patent/CN100442384C/zh not_active Expired - Lifetime
- 2003-05-16 DE DE60301097T patent/DE60301097T2/de not_active Expired - Lifetime
- 2003-05-16 EP EP03253059A patent/EP1376600B1/en not_active Expired - Lifetime
- 2003-06-16 KR KR1020030038615A patent/KR100972631B1/ko active IP Right Grant
- 2003-06-17 JP JP2003171478A patent/JP4886963B2/ja not_active Expired - Fee Related
- 2003-09-30 US US10/676,414 patent/US6905888B2/en not_active Expired - Lifetime
- 2003-10-30 US US10/697,171 patent/US20040089888A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150237A (ja) | 1998-07-10 | 2000-05-30 | Interuniv Micro Electronica Centrum Vzw | スピンバルブ構造とその製造法 |
US6205051B1 (en) * | 1998-09-04 | 2001-03-20 | Hewlett Packard Company | Stabilized magnetic memory cell |
JP2001313377A (ja) | 2000-03-09 | 2001-11-09 | Hewlett Packard Co <Hp> | メモリセル装置及びその製造方法 |
KR20020000119A (ko) * | 2000-06-20 | 2002-01-04 | 파트릭 제이. 바렛트 | 메모리 셀 장치 및 메모리 장치 |
Also Published As
Publication number | Publication date |
---|---|
US6905888B2 (en) | 2005-06-14 |
TW200400595A (en) | 2004-01-01 |
US20030231520A1 (en) | 2003-12-18 |
US6803616B2 (en) | 2004-10-12 |
CN100442384C (zh) | 2008-12-10 |
JP2004047992A (ja) | 2004-02-12 |
DE60301097T2 (de) | 2006-08-31 |
DE60301097D1 (de) | 2005-09-01 |
US20040062125A1 (en) | 2004-04-01 |
US20040089888A1 (en) | 2004-05-13 |
CN1469384A (zh) | 2004-01-21 |
EP1376600A1 (en) | 2004-01-02 |
EP1376600B1 (en) | 2005-07-27 |
JP4886963B2 (ja) | 2012-02-29 |
KR20040002557A (ko) | 2004-01-07 |
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