KR100948436B1 - 노광장치 및 디바이스의 제조방법 - Google Patents

노광장치 및 디바이스의 제조방법 Download PDF

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Publication number
KR100948436B1
KR100948436B1 KR1020080065776A KR20080065776A KR100948436B1 KR 100948436 B1 KR100948436 B1 KR 100948436B1 KR 1020080065776 A KR1020080065776 A KR 1020080065776A KR 20080065776 A KR20080065776 A KR 20080065776A KR 100948436 B1 KR100948436 B1 KR 100948436B1
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KR
South Korea
Prior art keywords
wafer
detection system
optical
alignment detection
reticle
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080065776A
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English (en)
Korean (ko)
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KR20090005984A (ko
Inventor
히로노리 마에다
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20090005984A publication Critical patent/KR20090005984A/ko
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/72—Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
    • G03B27/74—Positioning exposure meters in the apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020080065776A 2007-07-09 2008-07-08 노광장치 및 디바이스의 제조방법 Expired - Fee Related KR100948436B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007180155A JP5036429B2 (ja) 2007-07-09 2007-07-09 位置検出装置、露光装置、デバイス製造方法及び調整方法
JPJP-P-2007-00180155 2007-07-09

Publications (2)

Publication Number Publication Date
KR20090005984A KR20090005984A (ko) 2009-01-14
KR100948436B1 true KR100948436B1 (ko) 2010-03-17

Family

ID=40252821

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080065776A Expired - Fee Related KR100948436B1 (ko) 2007-07-09 2008-07-08 노광장치 및 디바이스의 제조방법

Country Status (4)

Country Link
US (1) US7580116B2 (https=)
JP (1) JP5036429B2 (https=)
KR (1) KR100948436B1 (https=)
TW (1) TWI358753B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4944690B2 (ja) * 2007-07-09 2012-06-06 キヤノン株式会社 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法
US20100296074A1 (en) * 2009-04-30 2010-11-25 Nikon Corporation Exposure method, and device manufacturing method
US8313877B2 (en) * 2009-06-12 2012-11-20 Micron Technology, Inc. Photolithography monitoring mark, photolithography mask comprising an exposure monitoring mark, and phase shift mask comprising an exposure monitoring mark
JP2011252871A (ja) * 2010-06-04 2011-12-15 Hitachi High-Technologies Corp 光学式検査装置、及び光学式検査装置のモデル予測によるスポット光の調整方法
JP2013024747A (ja) * 2011-07-21 2013-02-04 Canon Inc 計測装置、露光装置およびデバイス製造方法
JP6366261B2 (ja) * 2013-12-05 2018-08-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6494259B2 (ja) 2014-11-21 2019-04-03 キヤノン株式会社 照明光学装置、およびデバイス製造方法
JP6980562B2 (ja) * 2018-02-28 2021-12-15 キヤノン株式会社 パターン形成装置、アライメントマークの検出方法及びパターン形成方法
JP2020122930A (ja) * 2019-01-31 2020-08-13 キヤノン株式会社 計測装置、露光装置及び物品の製造方法
JP7257853B2 (ja) * 2019-04-02 2023-04-14 キヤノン株式会社 位置検出装置、露光装置および物品製造方法
JP2022117091A (ja) 2021-01-29 2022-08-10 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法
JP7238041B2 (ja) * 2021-07-29 2023-03-13 キヤノン株式会社 計測装置、計測方法、基板処理装置、および物品の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002340520A (ja) * 2001-05-21 2002-11-27 Nikon Corp 位置計測装置およびその調整方法
JP2003142389A (ja) * 2001-11-07 2003-05-16 Nikon Corp 位置検出装置の調整方法、露光装置、および露光方法
JP2004158555A (ja) * 2002-11-05 2004-06-03 Nikon Corp マーク位置検出装置ならびにその調整用基板および調整方法
JP2004264127A (ja) * 2003-02-28 2004-09-24 Nikon Corp マーク位置検出装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654553A (en) * 1993-06-10 1997-08-05 Nikon Corporation Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate
JP3327781B2 (ja) * 1995-10-13 2002-09-24 キヤノン株式会社 位置検出装置及びその検定方法と調整方法
WO1999050712A1 (en) * 1998-03-26 1999-10-07 Nikon Corporation Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device
JP4046961B2 (ja) * 2001-09-03 2008-02-13 キヤノン株式会社 位置検出方法、位置検出装置、露光装置及び露光方法
EP1512112A4 (en) * 2002-06-05 2006-11-02 Kla Tencor Tech Corp USE OF OVERLAY DIAGNOSIS FOR ADVANCED AUTOMATIC PROCESS CONTROL
JP4095391B2 (ja) * 2002-09-24 2008-06-04 キヤノン株式会社 位置検出方法
JP2006294854A (ja) * 2005-04-11 2006-10-26 Nikon Corp マーク検出方法、位置合わせ方法、露光方法、プログラム及びマーク計測装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002340520A (ja) * 2001-05-21 2002-11-27 Nikon Corp 位置計測装置およびその調整方法
JP2003142389A (ja) * 2001-11-07 2003-05-16 Nikon Corp 位置検出装置の調整方法、露光装置、および露光方法
JP2004158555A (ja) * 2002-11-05 2004-06-03 Nikon Corp マーク位置検出装置ならびにその調整用基板および調整方法
JP2004264127A (ja) * 2003-02-28 2004-09-24 Nikon Corp マーク位置検出装置

Also Published As

Publication number Publication date
JP5036429B2 (ja) 2012-09-26
TWI358753B (en) 2012-02-21
JP2009016762A (ja) 2009-01-22
US20090015813A1 (en) 2009-01-15
US7580116B2 (en) 2009-08-25
TW200921759A (en) 2009-05-16
KR20090005984A (ko) 2009-01-14

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