KR100939423B1 - 투영노광장치 - Google Patents

투영노광장치 Download PDF

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Publication number
KR100939423B1
KR100939423B1 KR1020020052652A KR20020052652A KR100939423B1 KR 100939423 B1 KR100939423 B1 KR 100939423B1 KR 1020020052652 A KR1020020052652 A KR 1020020052652A KR 20020052652 A KR20020052652 A KR 20020052652A KR 100939423 B1 KR100939423 B1 KR 100939423B1
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KR
South Korea
Prior art keywords
optical
group
projection
optical elements
lens
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Expired - Fee Related
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KR1020020052652A
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English (en)
Korean (ko)
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KR20030021127A (ko
Inventor
베른아르트 크니르
게랄트 리히터
Original Assignee
칼 짜이스 에스엠테 아게
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Application filed by 칼 짜이스 에스엠테 아게 filed Critical 칼 짜이스 에스엠테 아게
Publication of KR20030021127A publication Critical patent/KR20030021127A/ko
Application granted granted Critical
Publication of KR100939423B1 publication Critical patent/KR100939423B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020020052652A 2001-09-05 2002-09-03 투영노광장치 Expired - Fee Related KR100939423B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10143385.9 2001-09-05
DE10143385A DE10143385C2 (de) 2001-09-05 2001-09-05 Projektionsbelichtungsanlage

Publications (2)

Publication Number Publication Date
KR20030021127A KR20030021127A (ko) 2003-03-12
KR100939423B1 true KR100939423B1 (ko) 2010-01-28

Family

ID=7697717

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020052652A Expired - Fee Related KR100939423B1 (ko) 2001-09-05 2002-09-03 투영노광장치

Country Status (6)

Country Link
US (3) US20030063268A1 (enExample)
EP (1) EP1291719B1 (enExample)
JP (2) JP2003156684A (enExample)
KR (1) KR100939423B1 (enExample)
DE (2) DE10143385C2 (enExample)
TW (1) TW569038B (enExample)

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JP2002287023A (ja) * 2001-03-27 2002-10-03 Nikon Corp 投影光学系、該投影光学系を備えた投影露光装置及び投影露光方法
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
JP5102492B2 (ja) * 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US20080151364A1 (en) * 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
DE102004035595B4 (de) 2004-04-09 2008-02-07 Carl Zeiss Smt Ag Verfahren zur Justage eines Projektionsobjektives
KR20170028451A (ko) 2004-05-17 2017-03-13 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
TWI454731B (zh) 2005-05-27 2014-10-01 Zeiss Carl Smt Gmbh 用於改進投影物鏡的成像性質之方法以及該投影物鏡
EP1927890A1 (en) * 2006-11-30 2008-06-04 Carl Zeiss SMT AG Method of manufacturing a projection objective and projection objective manufactured by that method
JP5559543B2 (ja) * 2006-11-30 2014-07-23 カール・ツァイス・エスエムティー・ゲーエムベーハー 投影対物器械を製造する方法及びこの方法によって製造される投影対物器械
KR101492287B1 (ko) * 2007-03-27 2015-02-11 칼 짜이스 에스엠테 게엠베하 편평하게 조사된 보정광을 이용한 광학 소자의 보정
DE102008001497A1 (de) 2007-05-07 2008-11-13 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie und Subsystem einer Projektionsbelichtungsanlage
DE102009029673A1 (de) 2009-09-22 2010-11-25 Carl Zeiss Smt Ag Manipulator zur Positionierung eines optischen Elementes in mehreren räumlichen Freiheitsgraden
DE102010029651A1 (de) 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
WO2011141046A1 (en) 2010-04-23 2011-11-17 Carl Zeiss Smt Gmbh Process of operating a lithographic system comprising a manipulation of an optical element of the lithographic system
JP2011237588A (ja) * 2010-05-10 2011-11-24 Sony Corp ズームレンズ及び撮像装置
DE102011080437A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Abbildendes optisches System für die Mikrolithographie
CN102486569B (zh) * 2010-12-01 2014-06-18 上海微电子装备有限公司 一种投影物镜系统
JP6186352B2 (ja) 2011-05-30 2017-08-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ用の投影露光装置の光学素子を動かす方法
DE102012211256A1 (de) * 2012-06-29 2014-01-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Projektionslithographie
TWI476442B (zh) * 2013-02-26 2015-03-11 Sintai Optical Shenzhen Co Ltd 變焦鏡頭
DE102015206448B4 (de) * 2015-04-10 2018-06-21 Carl Zeiss Smt Gmbh Steuerungsvorrichtung zur Steuerung mindestens eines Manipulators eines Projektionsobjektives, Justieranlage und Verfahren zum Steuern mindestens eines Manipulators
CN114415351B (zh) * 2022-01-17 2022-08-19 东莞市融光光学有限公司 一种玻塑混合镜头
CN120949423A (zh) * 2025-10-16 2025-11-14 沈阳中一光学科技有限公司 一种小型化大光圈无反镜头

Citations (1)

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Publication number Priority date Publication date Assignee Title
US6014455A (en) * 1994-12-29 2000-01-11 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method

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US4065722A (en) * 1976-12-27 1977-12-27 Glenayre Electronics, Ltd. Demodulation method and circuit for discretely modulated ac signals
EP0183827B1 (en) * 1984-06-21 1991-08-28 AT&T Corp. Deep-uv lithography
JPH0690361B2 (ja) * 1984-10-18 1994-11-14 オリンパス光学工業株式会社 ズ−ムレンズ
JPH0820599B2 (ja) * 1985-05-11 1996-03-04 株式会社ニコン ズームレンズ
JPS62235916A (ja) * 1986-04-07 1987-10-16 Fuji Photo Film Co Ltd ズ−ムレンズ
JP2897345B2 (ja) * 1990-05-25 1999-05-31 キヤノン株式会社 投影露光装置
JP3243818B2 (ja) * 1992-02-14 2002-01-07 株式会社ニコン 投影露光装置及び方法、並びに素子製造方法
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
US5226186A (en) * 1992-07-06 1993-07-13 Dennis Boyd Waterbed mattress with draining system
JPH06349703A (ja) * 1993-06-11 1994-12-22 Nikon Corp 投影露光装置
JPH07270685A (ja) * 1994-03-29 1995-10-20 Nikon Corp ズームレンズ
JPH0817719A (ja) * 1994-06-30 1996-01-19 Nikon Corp 投影露光装置
US5930032A (en) * 1994-12-22 1999-07-27 Asahi Kogaku Kogyo Kabushiki Kaisha UV image forming optical system and lens for UV radiation
JP3893626B2 (ja) * 1995-01-25 2007-03-14 株式会社ニコン 投影光学装置の調整方法、投影光学装置、露光装置及び露光方法
US5831700A (en) * 1995-05-19 1998-11-03 Kent State University Polymer stabilized four domain twisted nematic liquid crystal display
JP3624973B2 (ja) * 1995-10-12 2005-03-02 株式会社ニコン 投影光学系
US6061180A (en) * 1996-10-29 2000-05-09 Canon Kabushiki Kaisha Zoom lens
JP3365606B2 (ja) * 1997-01-30 2003-01-14 富士写真光機株式会社 赤外線ズームレンズ
JP3925576B2 (ja) * 1997-07-24 2007-06-06 株式会社ニコン 投影光学系、該光学系を備えた露光装置、及び該装置を用いたデバイスの製造方法
JPH11307415A (ja) * 1998-04-16 1999-11-05 Nikon Corp 露光方法および露光装置
US7112772B2 (en) * 1998-05-29 2006-09-26 Carl Zeiss Smt Ag Catadioptric projection objective with adaptive mirror and projection exposure method
US6256086B1 (en) * 1998-10-06 2001-07-03 Canon Kabushiki Kaisha Projection exposure apparatus, and device manufacturing method
DE19855108A1 (de) * 1998-11-30 2000-05-31 Zeiss Carl Fa Mikrolithographisches Reduktionsobjektiv, Projektionsbelichtungsanlage und -Verfahren
DE19942281A1 (de) * 1999-05-14 2000-11-16 Zeiss Carl Fa Projektionsobjektiv
JP3862497B2 (ja) * 2000-11-10 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
JP2002287023A (ja) * 2001-03-27 2002-10-03 Nikon Corp 投影光学系、該投影光学系を備えた投影露光装置及び投影露光方法

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Publication number Priority date Publication date Assignee Title
US6014455A (en) * 1994-12-29 2000-01-11 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP2009037251A (ja) 2009-02-19
TW569038B (en) 2004-01-01
EP1291719A1 (de) 2003-03-12
US20070171539A1 (en) 2007-07-26
DE10143385C2 (de) 2003-07-17
US20030063268A1 (en) 2003-04-03
KR20030021127A (ko) 2003-03-12
DE50211190D1 (de) 2007-12-27
EP1291719B1 (de) 2007-11-14
US7408621B2 (en) 2008-08-05
DE10143385A1 (de) 2003-04-03
US20060170897A1 (en) 2006-08-03
US7457043B2 (en) 2008-11-25
JP2003156684A (ja) 2003-05-30

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