KR100926621B1 - 집적 회로, 집적 회로의 테스트 방법 및 집적 회로의테스트 결과 생성 방법 - Google Patents

집적 회로, 집적 회로의 테스트 방법 및 집적 회로의테스트 결과 생성 방법 Download PDF

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Publication number
KR100926621B1
KR100926621B1 KR1020030044062A KR20030044062A KR100926621B1 KR 100926621 B1 KR100926621 B1 KR 100926621B1 KR 1020030044062 A KR1020030044062 A KR 1020030044062A KR 20030044062 A KR20030044062 A KR 20030044062A KR 100926621 B1 KR100926621 B1 KR 100926621B1
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South Korea
Prior art keywords
signal
value
storage element
bit line
series
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Expired - Fee Related
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KR1020030044062A
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English (en)
Korean (ko)
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KR20040004098A (ko
Inventor
릭키스주르겐티
맥아담스휴피
Original Assignee
애질런트 테크놀로지스, 인크.
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR20040004098A publication Critical patent/KR20040004098A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
KR1020030044062A 2002-07-02 2003-07-01 집적 회로, 집적 회로의 테스트 방법 및 집적 회로의테스트 결과 생성 방법 Expired - Fee Related KR100926621B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/190,078 2002-07-02
US10/190,078 US6785629B2 (en) 2002-07-02 2002-07-02 Accuracy determination in bit line voltage measurements

Publications (2)

Publication Number Publication Date
KR20040004098A KR20040004098A (ko) 2004-01-13
KR100926621B1 true KR100926621B1 (ko) 2009-11-11

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Family Applications (1)

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KR1020030044062A Expired - Fee Related KR100926621B1 (ko) 2002-07-02 2003-07-01 집적 회로, 집적 회로의 테스트 방법 및 집적 회로의테스트 결과 생성 방법

Country Status (4)

Country Link
US (1) US6785629B2 (https=)
JP (1) JP4312521B2 (https=)
KR (1) KR100926621B1 (https=)
DE (1) DE10313365B4 (https=)

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US8593886B2 (en) 2011-10-28 2013-11-26 SK Hynix Inc. Semiconductor system including semiconductor device
US9053772B2 (en) 2010-12-10 2015-06-09 SK Hynix Inc. Method for conducting reference voltage training

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US6856534B2 (en) * 2002-09-30 2005-02-15 Texas Instruments Incorporated Ferroelectric memory with wide operating voltage and multi-bit storage per cell
IL152486A0 (en) 2002-10-25 2003-05-29 Meir Eini Alcohol-free cosmetic and pharmaceutical foam carrier
US9265725B2 (en) 2002-10-25 2016-02-23 Foamix Pharmaceuticals Ltd. Dicarboxylic acid foamable vehicle and pharmaceutical compositions thereof
US20080138296A1 (en) 2002-10-25 2008-06-12 Foamix Ltd. Foam prepared from nanoemulsions and uses
ES2532906T5 (es) 2002-10-25 2022-03-23 Foamix Pharmaceuticals Ltd Espuma cosmética y farmacéutica
US7700076B2 (en) 2002-10-25 2010-04-20 Foamix, Ltd. Penetrating pharmaceutical foam
US8486376B2 (en) 2002-10-25 2013-07-16 Foamix Ltd. Moisturizing foam containing lanolin
US8900554B2 (en) 2002-10-25 2014-12-02 Foamix Pharmaceuticals Ltd. Foamable composition and uses thereof
US8119109B2 (en) 2002-10-25 2012-02-21 Foamix Ltd. Foamable compositions, kits and methods for hyperhidrosis
US8119150B2 (en) 2002-10-25 2012-02-21 Foamix Ltd. Non-flammable insecticide composition and uses thereof
US7820145B2 (en) 2003-08-04 2010-10-26 Foamix Ltd. Oleaginous pharmaceutical and cosmetic foam
US9668972B2 (en) 2002-10-25 2017-06-06 Foamix Pharmaceuticals Ltd. Nonsteroidal immunomodulating kit and composition and uses thereof
US7704518B2 (en) 2003-08-04 2010-04-27 Foamix, Ltd. Foamable vehicle and pharmaceutical compositions thereof
US10117812B2 (en) 2002-10-25 2018-11-06 Foamix Pharmaceuticals Ltd. Foamable composition combining a polar solvent and a hydrophobic carrier
US9211259B2 (en) 2002-11-29 2015-12-15 Foamix Pharmaceuticals Ltd. Antibiotic kit and composition and uses thereof
US7575739B2 (en) 2003-04-28 2009-08-18 Foamix Ltd. Foamable iodine composition
US8795693B2 (en) 2003-08-04 2014-08-05 Foamix Ltd. Compositions with modulating agents
US8486374B2 (en) 2003-08-04 2013-07-16 Foamix Ltd. Hydrophilic, non-aqueous pharmaceutical carriers and compositions and uses
KR100575882B1 (ko) * 2003-11-26 2006-05-03 주식회사 하이닉스반도체 번인 테스트용 내부 전압 발생 장치
JP4322645B2 (ja) * 2003-11-28 2009-09-02 株式会社日立製作所 半導体集積回路装置
KR100583117B1 (ko) * 2003-12-04 2006-05-23 주식회사 하이닉스반도체 데이터버스 풀다운 센싱 기능을 갖는 센스앰프 어레이, 데이터버스 풀다운 센싱 기능을 갖는 센스앰프 어레이를 포함하는 불휘발성 강유전체 메모리 장치, 그리고 데이터버스 풀다운 센싱 기능을 갖는 센스앰프 어레이를 포함하는 불휘발성 강유전체 메모리 장치의 데이터 센싱 방법
US7672105B2 (en) * 2006-08-28 2010-03-02 International Business Machines Corporation Production of limited lifetime devices achieved through E-fuses
US7660142B2 (en) * 2006-09-28 2010-02-09 Infineon Technologies Flash Gmbh & Co. Kg Device with memory and method of operating device
US20080260655A1 (en) 2006-11-14 2008-10-23 Dov Tamarkin Substantially non-aqueous foamable petrolatum based pharmaceutical and cosmetic compositions and their uses
US8636982B2 (en) 2007-08-07 2014-01-28 Foamix Ltd. Wax foamable vehicle and pharmaceutical compositions thereof
WO2009069006A2 (en) 2007-11-30 2009-06-04 Foamix Ltd. Foam containing benzoyl peroxide
US8518376B2 (en) 2007-12-07 2013-08-27 Foamix Ltd. Oil-based foamable carriers and formulations
WO2009072007A2 (en) 2007-12-07 2009-06-11 Foamix Ltd. Carriers, formulations, methods for formulating unstable active agents for external application and uses thereof
CA2712120A1 (en) 2008-01-14 2009-07-23 Foamix Ltd. Poloxamer foamable pharmaceutical compositions with active agents and/or therapeutic cells and uses
US8212569B1 (en) 2008-07-17 2012-07-03 The United States Of America, As Represented By The Secretary Of The Navy Coupled bi-stable circuit for ultra-sensitive electric field sensing utilizing differential transistor pairs
US8049486B1 (en) 2008-07-17 2011-11-01 The United States Of America As Represented By The Secretary Of The Navy Coupled electric field sensors for DC target electric field detection
WO2011013008A2 (en) 2009-07-29 2011-02-03 Foamix Ltd. Non surface active agent non polymeric agent hydro-alcoholic foamable compositions, breakable foams and their uses
CA2769625C (en) 2009-07-29 2017-04-11 Foamix Ltd. Non surfactant hydro-alcoholic foamable compositions, breakable foams and their uses
US10029013B2 (en) 2009-10-02 2018-07-24 Foamix Pharmaceuticals Ltd. Surfactant-free, water-free formable composition and breakable foams and their uses
US9849142B2 (en) 2009-10-02 2017-12-26 Foamix Pharmaceuticals Ltd. Methods for accelerated return of skin integrity and for the treatment of impetigo
US8174325B1 (en) 2010-10-13 2012-05-08 The United States Of America As Represented By The Secretary Of The Navy Adaptive injection-locked oscillator array for broad spectrum RF analysis
US9361965B2 (en) * 2013-10-11 2016-06-07 Texas Instruments Incorporated Circuit and method for imprint reduction in FRAM memories
US10373665B2 (en) * 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
US9892776B2 (en) 2016-06-13 2018-02-13 Micron Technology, Inc. Half density ferroelectric memory and operation
WO2018026815A1 (en) * 2016-08-01 2018-02-08 The Regents Of The University Of California Memory write and read assistance using negative differential resistance devices
CN108255756B (zh) * 2017-12-12 2020-06-19 深圳比特微电子科技有限公司 一种多芯片串联通信系统
US10546629B1 (en) 2018-10-10 2020-01-28 Micron Technology, Inc. Memory cell sensing based on precharging an access line using a sense amplifier
US10930337B2 (en) * 2018-12-26 2021-02-23 Micron Technology, Inc. Write techniques for a memory device with a charge transfer device

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JPH04195899A (ja) * 1990-11-27 1992-07-15 Matsushita Electric Ind Co Ltd 半導体装置
JP2001291385A (ja) * 2000-04-05 2001-10-19 Nec Corp 半導体記憶装置並びにその試験装置および試験方法
US6590799B1 (en) * 2002-05-29 2003-07-08 Agilent Technologies, Inc. On-chip charge distribution measurement circuit
US20040004873A1 (en) 2002-07-02 2004-01-08 Rickes Juergen T. On-chip compression of charge distribution data

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DE19844101A1 (de) * 1998-09-25 2000-03-30 Siemens Ag Schaltungsanordnung zur Generierung einer Referenzspannung für das Auslesen eines ferroelektrischen Speichers
US6327682B1 (en) * 1999-03-22 2001-12-04 Taiwan Semiconductor Manufacturing Company Wafer burn-in design for DRAM and FeRAM devices
US6392916B1 (en) * 1999-10-01 2002-05-21 Samsung Electronics Co., Ltd. Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
KR100400773B1 (ko) * 2001-06-29 2003-10-08 주식회사 하이닉스반도체 강유전체 랜덤 억세스 메모리의 강유전 캐패시터 테스트회로
US6704218B2 (en) * 2002-04-02 2004-03-09 Agilent Technologies, Inc. FeRAM with a single access/multiple-comparison operation

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JPH04195899A (ja) * 1990-11-27 1992-07-15 Matsushita Electric Ind Co Ltd 半導体装置
JP2001291385A (ja) * 2000-04-05 2001-10-19 Nec Corp 半導体記憶装置並びにその試験装置および試験方法
US6590799B1 (en) * 2002-05-29 2003-07-08 Agilent Technologies, Inc. On-chip charge distribution measurement circuit
US20040004873A1 (en) 2002-07-02 2004-01-08 Rickes Juergen T. On-chip compression of charge distribution data

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9053772B2 (en) 2010-12-10 2015-06-09 SK Hynix Inc. Method for conducting reference voltage training
US8593886B2 (en) 2011-10-28 2013-11-26 SK Hynix Inc. Semiconductor system including semiconductor device

Also Published As

Publication number Publication date
DE10313365A1 (de) 2004-01-29
JP4312521B2 (ja) 2009-08-12
DE10313365B4 (de) 2009-05-20
US20040006441A1 (en) 2004-01-08
KR20040004098A (ko) 2004-01-13
US6785629B2 (en) 2004-08-31
JP2004047070A (ja) 2004-02-12

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