KR100909177B1 - 듀얼 다마신 패턴 형성 방법 - Google Patents
듀얼 다마신 패턴 형성 방법 Download PDFInfo
- Publication number
- KR100909177B1 KR100909177B1 KR1020020085479A KR20020085479A KR100909177B1 KR 100909177 B1 KR100909177 B1 KR 100909177B1 KR 1020020085479 A KR1020020085479 A KR 1020020085479A KR 20020085479 A KR20020085479 A KR 20020085479A KR 100909177 B1 KR100909177 B1 KR 100909177B1
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- Prior art keywords
- via hole
- interlayer insulating
- trench
- photoresist pattern
- forming
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- 230000009977 dual effect Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 36
- 239000011229 interlayer Substances 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000007261 regionalization Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 16
- 230000031700 light absorption Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000004528 spin coating Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 5
- -1 PE-TEOS Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000881 depressing effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (5)
- 배선이 형성된 기판 상에 확산 방지막, 층간 절연막 및 캡핑층을 형성하고, 상기 캡핑층 상에 비아홀용 포토레지스트 패턴을 형성하는 단계;상기 비아홀용 포토레지스트 패턴을 이용한 식각 공정으로 상기 캡핑층, 상기 층간 절연막 및 상기 확산 방지막을 식각하여 상기 배선이 노출된 비아홀을 형성하는 단계;상기 비아홀용 포토레지스트 패턴을 제거하는 단계;상기 비아홀을 광흡수막으로 매립하는 단계;상기 광흡수막 상에 트렌치용 포토레지스트 패턴을 형성한 후, 상기 광흡수막, 상기 층간 절연막 및 상기 캡핑층을 일정 깊이 식각하여 트렌치를 형성하는 단계;상기 트렌치용 포토레지스트 패턴을 제거하는 단계; 및상기 비아홀에 남아있는 상기 광흡수막을 제거하는 단계를 포함하고,상기 광흡수막은 상기 층간 절연막과 식각 선택비가 유사한 실록산 계열의 물질이며,상기 트렌치를 형성하는 단계는 C4F8 가스, O2 가스, N2 가스 및 Ar 가스를 활성화시킨 플라즈마를 이용한 상기 층간 절연막과 상기 광흡수막의 비선택적 식각으로 수행되는 것을 특징으로 하는 듀얼 다마신 패턴 형성 방법.
- 제 1 항에 있어서,상기 비아홀용 포토레지스트 패턴은 H2/N2 가스를 이용하여 제거하는 것을 특 징으로 하는 듀얼 다마신 패턴 형성 방법.
- 삭제
- 삭제
- 제 1 항에 있어서,상기 남아있는 광흡수막은 희석된 HF 용액으로 제거하는 것을 특징으로 하는 듀얼 다마신 패턴 형성 방법.
Priority Applications (1)
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---|---|---|---|
KR1020020085479A KR100909177B1 (ko) | 2002-12-27 | 2002-12-27 | 듀얼 다마신 패턴 형성 방법 |
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KR1020020085479A KR100909177B1 (ko) | 2002-12-27 | 2002-12-27 | 듀얼 다마신 패턴 형성 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040058959A KR20040058959A (ko) | 2004-07-05 |
KR100909177B1 true KR100909177B1 (ko) | 2009-07-22 |
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KR1020020085479A KR100909177B1 (ko) | 2002-12-27 | 2002-12-27 | 듀얼 다마신 패턴 형성 방법 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060065184A (ko) * | 2004-12-10 | 2006-06-14 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
KR100652303B1 (ko) * | 2004-12-29 | 2006-11-30 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
KR100691105B1 (ko) * | 2005-09-28 | 2007-03-09 | 동부일렉트로닉스 주식회사 | 듀얼 다마신 공정을 이용한 구리 배선 형성 방법 |
KR20140083696A (ko) * | 2012-12-26 | 2014-07-04 | 제일모직주식회사 | 반도체 소자의 듀얼 다마신 구조 형성 방법 및 그에 따른 반도체 소자 디바이스 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6323123B1 (en) * | 2000-09-06 | 2001-11-27 | United Microelectronics Corp. | Low-K dual damascene integration process |
KR20020052479A (ko) * | 2000-12-26 | 2002-07-04 | 박종섭 | 반도체소자의 캐패시터 형성방법 |
KR20020058288A (ko) * | 2000-12-29 | 2002-07-12 | 박종섭 | 반도체소자의 제조방법 |
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2002
- 2002-12-27 KR KR1020020085479A patent/KR100909177B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6323123B1 (en) * | 2000-09-06 | 2001-11-27 | United Microelectronics Corp. | Low-K dual damascene integration process |
KR20020052479A (ko) * | 2000-12-26 | 2002-07-04 | 박종섭 | 반도체소자의 캐패시터 형성방법 |
KR20020058288A (ko) * | 2000-12-29 | 2002-07-12 | 박종섭 | 반도체소자의 제조방법 |
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KR20040058959A (ko) | 2004-07-05 |
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