KR100893230B1 - 반도체 발광소자의 제조방법, 반도체발광소자,반도체소자의 제조방법, 반도체소자, 소자의 제조방법 및소자 - Google Patents

반도체 발광소자의 제조방법, 반도체발광소자,반도체소자의 제조방법, 반도체소자, 소자의 제조방법 및소자 Download PDF

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KR100893230B1
KR100893230B1 KR1020047005171A KR20047005171A KR100893230B1 KR 100893230 B1 KR100893230 B1 KR 100893230B1 KR 1020047005171 A KR1020047005171 A KR 1020047005171A KR 20047005171 A KR20047005171 A KR 20047005171A KR 100893230 B1 KR100893230 B1 KR 100893230B1
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light emitting
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KR20040062947A (ko
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츠네노리 아사츠마
시게타카 도미야
고시 다마무라
츠요시 도조
오사무 고토
모토키 겐사쿠
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소니 가부시끼 가이샤
스미토모 덴키 고교 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10H20/80—Constructional details
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    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01S2301/00—Functional characteristics
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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KR1020047005171A 2001-10-12 2002-10-03 반도체 발광소자의 제조방법, 반도체발광소자,반도체소자의 제조방법, 반도체소자, 소자의 제조방법 및소자 Expired - Fee Related KR100893230B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001315703A JP4290358B2 (ja) 2001-10-12 2001-10-12 半導体発光素子の製造方法
JPJP-P-2001-00315703 2001-10-12
PCT/JP2002/010323 WO2003034560A1 (fr) 2001-10-12 2002-10-03 Procede pour produire un element electroluminescent semi-conducteur, element electroluminescent semi-conducteur, procede pour produire un element semi-conducteur, element semi-conducteur, procede pour produire un element et element

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KR1020077021452A Division KR100889052B1 (ko) 2001-10-12 2002-10-03 반도체 발광소자의 제조방법, 반도체발광소자,반도체소자의 제조방법, 반도체소자, 소자의 제조방법 및소자
KR1020077021454A Division KR100893232B1 (ko) 2001-10-12 2002-10-03 반도체 발광소자 및 반도체 소자

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KR100893230B1 true KR100893230B1 (ko) 2009-04-16

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KR1020077021452A Expired - Fee Related KR100889052B1 (ko) 2001-10-12 2002-10-03 반도체 발광소자의 제조방법, 반도체발광소자,반도체소자의 제조방법, 반도체소자, 소자의 제조방법 및소자
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US (3) US7176499B2 (enExample)
EP (1) EP1441426B1 (enExample)
JP (1) JP4290358B2 (enExample)
KR (3) KR100893230B1 (enExample)
CN (4) CN100440557C (enExample)
CA (2) CA2463169C (enExample)
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JP4920152B2 (ja) * 2001-10-12 2012-04-18 住友電気工業株式会社 構造基板の製造方法および半導体素子の製造方法
WO2003038957A1 (fr) 2001-10-29 2003-05-08 Sharp Kabushiki Kaisha Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur
US6812496B2 (en) 2002-01-10 2004-11-02 Sharp Kabushiki Kaisha Group III nitride semiconductor laser device
JP4443097B2 (ja) * 2002-06-20 2010-03-31 ソニー株式会社 ＧａＮ系半導体素子の作製方法
US7372077B2 (en) * 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP3916584B2 (ja) 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
US7462882B2 (en) 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
JP4229005B2 (ja) 2003-06-26 2009-02-25 住友電気工業株式会社 ＧａＮ基板及びその製造方法、並びに窒化物半導体素子
JP5010096B2 (ja) * 2003-07-10 2012-08-29 日亜化学工業株式会社 窒化物半導体レーザ素子及びそれを用いたｌｄ装置
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