KR100881065B1 - 수동 소자용 모노리식 저 유전율 플랫폼 및 그 제조방법 - Google Patents

수동 소자용 모노리식 저 유전율 플랫폼 및 그 제조방법 Download PDF

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Publication number
KR100881065B1
KR100881065B1 KR1020017016826A KR20017016826A KR100881065B1 KR 100881065 B1 KR100881065 B1 KR 100881065B1 KR 1020017016826 A KR1020017016826 A KR 1020017016826A KR 20017016826 A KR20017016826 A KR 20017016826A KR 100881065 B1 KR100881065 B1 KR 100881065B1
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dielectric
forming
silicon substrate
platform
sidewalls
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KR20020019474A (ko
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로버트 브루스 데이비스
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로버트 브루스 데이비스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020017016826A 1999-07-12 2000-07-11 수동 소자용 모노리식 저 유전율 플랫폼 및 그 제조방법 Expired - Fee Related KR100881065B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/351,714 US6307247B1 (en) 1999-07-12 1999-07-12 Monolithic low dielectric constant platform for passive components and method
US09/351,714 1999-07-12

Publications (2)

Publication Number Publication Date
KR20020019474A KR20020019474A (ko) 2002-03-12
KR100881065B1 true KR100881065B1 (ko) 2009-01-30

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Country Status (6)

Country Link
US (4) US6307247B1 (enExample)
EP (1) EP1198837A4 (enExample)
JP (1) JP2003504875A (enExample)
KR (1) KR100881065B1 (enExample)
AU (1) AU6092500A (enExample)
WO (1) WO2001004955A1 (enExample)

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EP1130631A1 (en) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. Process for forming a buried cavity in a semiconductor material wafer
US7294536B2 (en) * 2000-07-25 2007-11-13 Stmicroelectronics S.R.L. Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
DE10041691A1 (de) * 2000-08-24 2002-03-14 Infineon Technologies Ag Halbleiteranordnung
FR2823377B1 (fr) 2001-04-06 2004-07-16 St Microelectronics Sa Ligne conductrice haute frequence sur un circuit integre
FR2826179A1 (fr) * 2001-06-14 2002-12-20 St Microelectronics Sa Tranchee d'isolement profonde et procede de realisation
DE10144847A1 (de) * 2001-09-12 2003-03-27 Infineon Technologies Ag Verfahren zur Herstellung einer Membran
US6621136B2 (en) 2001-09-28 2003-09-16 Semiconductor Components Industries Llc Semiconductor device having regions of low substrate capacitance
FR2830670A1 (fr) * 2001-10-10 2003-04-11 St Microelectronics Sa Inductance et son procede de fabrication
US6498069B1 (en) 2001-10-17 2002-12-24 Semiconductor Components Industries Llc Semiconductor device and method of integrating trench structures
US20030146490A1 (en) * 2002-02-07 2003-08-07 Semiconductor Components Industries, Llc. Semiconductor device and method of providing regions of low substrate capacitance
US6661068B2 (en) 2002-03-20 2003-12-09 Semiconductor Components Industries Llc Semiconductor device and method of providing regions of low substrate capacitance
DE10242661A1 (de) * 2002-09-13 2004-03-25 Conti Temic Microelectronic Gmbh Verfahren zum Herstellen von Isolationsstrukturen
JP4190931B2 (ja) 2003-03-28 2008-12-03 三菱電機株式会社 半導体装置
US6835631B1 (en) 2003-11-20 2004-12-28 Chartered Semiconductor Manufacturing Ltd Method to enhance inductor Q factor by forming air gaps below inductors
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US20070057289A1 (en) 2004-01-10 2007-03-15 Davies Robert B Power semiconductor device and method therefor
US7087925B2 (en) * 2004-02-09 2006-08-08 Semiconductor Components Industries, L.L.C. Semiconductor device having reduced capacitance to substrate and method
US7339253B2 (en) * 2004-08-16 2008-03-04 Taiwan Semiconductor Manufacturing Company Retrograde trench isolation structures
US7396732B2 (en) * 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US7425485B2 (en) * 2005-09-30 2008-09-16 Freescale Semiconductor, Inc. Method for forming microelectronic assembly
DE102006001386A1 (de) * 2005-12-20 2007-06-21 Robert Bosch Gmbh Verfahren zum Herstellen einer Membran auf einem Halbleitersubstrat und mikromechanisches Bauelement mit einer solchen Membran
US7656003B2 (en) * 2006-08-25 2010-02-02 Hvvi Semiconductors, Inc Electrical stress protection apparatus and method of manufacture
JP5403862B2 (ja) * 2006-11-28 2014-01-29 チェイル インダストリーズ インコーポレイテッド 微細金属パターンの製造方法
US7888746B2 (en) * 2006-12-15 2011-02-15 Hvvi Semiconductors, Inc. Semiconductor structure and method of manufacture
US8120094B2 (en) * 2007-08-14 2012-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation with improved structure and method of forming
US20100230776A1 (en) * 2007-12-11 2010-09-16 Bishnu Prasanna Gogoi Semiconductor structure and method of manufacture
US20090146249A1 (en) * 2007-12-11 2009-06-11 Gogoi Bishnu P Semiconductor structure and method of manufacture
US7811896B2 (en) * 2007-12-11 2010-10-12 Hvvi Semiconductors, Inc. Semiconductor structure and method of manufacture
DE102010000888B4 (de) 2010-01-14 2019-03-28 Robert Bosch Gmbh Verfahren zum Ausbilden von Aussparungen in einem Halbleiterbauelement und mit dem Verfahren hergestelltes Bauelement
US8524548B2 (en) * 2011-04-26 2013-09-03 National Semiconductor Corporation DMOS Transistor with a cavity that lies below the drift region
CN102815662A (zh) * 2011-06-08 2012-12-12 无锡华润上华半导体有限公司 一种在半导体衬底中制备腔体的方法
CN102320560A (zh) * 2011-09-14 2012-01-18 上海先进半导体制造股份有限公司 Mems器件的薄膜制造方法
US9355972B2 (en) * 2014-03-04 2016-05-31 International Business Machines Corporation Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator
CN106477513B (zh) * 2015-08-28 2017-12-05 中国科学院上海微系统与信息技术研究所 单晶硅压力敏感膜片结构及其制作方法
DE102016115334B4 (de) * 2016-08-18 2023-11-09 Infineon Technologies Ag SOI-Insel in einem Leistungshalbleiterbauelement und ein Verfahren zu dessen Herstellung
US10283249B2 (en) 2016-09-30 2019-05-07 International Business Machines Corporation Method for fabricating a magnetic material stack
US20180102315A1 (en) * 2016-10-11 2018-04-12 Globalfoundries Inc. Surface area-dependent semiconductor device with increased surface area
US10461152B2 (en) 2017-07-10 2019-10-29 Globalfoundries Inc. Radio frequency switches with air gap structures
US10446643B2 (en) 2018-01-22 2019-10-15 Globalfoundries Inc. Sealed cavity structures with a planar surface
US11410872B2 (en) * 2018-11-30 2022-08-09 Globalfoundries U.S. Inc. Oxidized cavity structures within and under semiconductor devices
US10923577B2 (en) 2019-01-07 2021-02-16 Globalfoundries U.S. Inc. Cavity structures under shallow trench isolation regions
US11127816B2 (en) 2020-02-14 2021-09-21 Globalfoundries U.S. Inc. Heterojunction bipolar transistors with one or more sealed airgap

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Also Published As

Publication number Publication date
US20020137349A1 (en) 2002-09-26
JP2003504875A (ja) 2003-02-04
US6307247B1 (en) 2001-10-23
KR20020019474A (ko) 2002-03-12
US20020017698A1 (en) 2002-02-14
USRE41581E1 (en) 2010-08-24
WO2001004955A1 (en) 2001-01-18
AU6092500A (en) 2001-01-30
EP1198837A4 (en) 2007-08-01
EP1198837A1 (en) 2002-04-24
US6617252B2 (en) 2003-09-09
US6512283B2 (en) 2003-01-28

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