FR2823377B1 - Ligne conductrice haute frequence sur un circuit integre - Google Patents
Ligne conductrice haute frequence sur un circuit integreInfo
- Publication number
- FR2823377B1 FR2823377B1 FR0104693A FR0104693A FR2823377B1 FR 2823377 B1 FR2823377 B1 FR 2823377B1 FR 0104693 A FR0104693 A FR 0104693A FR 0104693 A FR0104693 A FR 0104693A FR 2823377 B1 FR2823377 B1 FR 2823377B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- high frequency
- conductive line
- frequency conductive
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0104693A FR2823377B1 (fr) | 2001-04-06 | 2001-04-06 | Ligne conductrice haute frequence sur un circuit integre |
US10/117,782 US6949444B2 (en) | 2001-04-06 | 2002-04-05 | High-frequency line |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0104693A FR2823377B1 (fr) | 2001-04-06 | 2001-04-06 | Ligne conductrice haute frequence sur un circuit integre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2823377A1 FR2823377A1 (fr) | 2002-10-11 |
FR2823377B1 true FR2823377B1 (fr) | 2004-07-16 |
Family
ID=8862026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0104693A Expired - Lifetime FR2823377B1 (fr) | 2001-04-06 | 2001-04-06 | Ligne conductrice haute frequence sur un circuit integre |
Country Status (2)
Country | Link |
---|---|
US (1) | US6949444B2 (fr) |
FR (1) | FR2823377B1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10143936A1 (de) * | 2001-09-07 | 2003-01-09 | Infineon Technologies Ag | Verfahren zur Bildung eines SOI-Substrats, vertikaler Transistor und Speicherzelle mit vertikalem Transistor |
US7811896B2 (en) * | 2007-12-11 | 2010-10-12 | Hvvi Semiconductors, Inc. | Semiconductor structure and method of manufacture |
US7985977B2 (en) * | 2007-12-11 | 2011-07-26 | Hvvi Semiconductors, Inc. | Sacrificial pillar dielectric platform |
TWI664695B (zh) * | 2017-06-01 | 2019-07-01 | 世界先進積體電路股份有限公司 | 半導體裝置之隔離區塊的製造方法、半導體裝置及其製造方法 |
US10115626B1 (en) | 2017-07-17 | 2018-10-30 | Vanguard International Semiconductor Corporation | Methods for forming isolation blocks of semiconductor devices, semiconductor devices and methods for manufacturing the same |
US11081364B2 (en) * | 2019-02-06 | 2021-08-03 | Micron Technology, Inc. | Reduction of crystal growth resulting from annealing a conductive material |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4888300A (en) * | 1985-11-07 | 1989-12-19 | Fairchild Camera And Instrument Corporation | Submerged wall isolation of silicon islands |
JPS63122261A (ja) * | 1986-11-12 | 1988-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5648340A (en) * | 1991-10-31 | 1997-07-15 | Barnea; Eytan R. | Gestational agents for controlling cell proliferation |
US5098856A (en) * | 1991-06-18 | 1992-03-24 | International Business Machines Corporation | Air-filled isolation trench with chemically vapor deposited silicon dioxide cap |
US5204280A (en) * | 1992-04-09 | 1993-04-20 | International Business Machines Corporation | Process for fabricating multiple pillars inside a dram trench for increased capacitor surface |
JP3161068B2 (ja) * | 1992-08-28 | 2001-04-25 | 日産自動車株式会社 | 半導体ミリ波装置 |
US5516720A (en) * | 1994-02-14 | 1996-05-14 | United Microelectronics Corporation | Stress relaxation in dielectric before metallization |
US5466630A (en) * | 1994-03-21 | 1995-11-14 | United Microelectronics Corp. | Silicon-on-insulator technique with buried gap |
US5595926A (en) * | 1994-06-29 | 1997-01-21 | Industrial Technology Research Institute | Method for fabricating a DRAM trench capacitor with recessed pillar |
JPH10321802A (ja) * | 1997-05-22 | 1998-12-04 | Toshiba Corp | インダクタ素子 |
DE19847440A1 (de) * | 1997-12-22 | 1999-06-24 | Inst Halbleiterphysik Gmbh | Integrierte Schaltung mit verringerten parasitären kapazitiven Einflüssen und Verfahren zu ihrer Herstellung |
TW363278B (en) * | 1998-01-16 | 1999-07-01 | Winbond Electronics Corp | Preparation method for semiconductor to increase the inductive resonance frequency and Q value |
JP3214441B2 (ja) * | 1998-04-10 | 2001-10-02 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6071805A (en) * | 1999-01-25 | 2000-06-06 | Chartered Semiconductor Manufacturing, Ltd. | Air gap formation for high speed IC processing |
JP4005762B2 (ja) * | 1999-06-30 | 2007-11-14 | 株式会社東芝 | 集積回路装置及びその製造方法 |
US6307247B1 (en) | 1999-07-12 | 2001-10-23 | Robert Bruce Davies | Monolithic low dielectric constant platform for passive components and method |
KR100369324B1 (ko) * | 1999-12-02 | 2003-01-24 | 한국전자통신연구원 | 평면형 마이크로 공동구조 제조 방법 |
US6406975B1 (en) * | 2000-11-27 | 2002-06-18 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap shallow trench isolation (STI) structure |
US6498069B1 (en) * | 2001-10-17 | 2002-12-24 | Semiconductor Components Industries Llc | Semiconductor device and method of integrating trench structures |
-
2001
- 2001-04-06 FR FR0104693A patent/FR2823377B1/fr not_active Expired - Lifetime
-
2002
- 2002-04-05 US US10/117,782 patent/US6949444B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020164867A1 (en) | 2002-11-07 |
US6949444B2 (en) | 2005-09-27 |
FR2823377A1 (fr) | 2002-10-11 |
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