KR100870940B1 - 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법 - Google Patents

레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법 Download PDF

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Publication number
KR100870940B1
KR100870940B1 KR1020077004557A KR20077004557A KR100870940B1 KR 100870940 B1 KR100870940 B1 KR 100870940B1 KR 1020077004557 A KR1020077004557 A KR 1020077004557A KR 20077004557 A KR20077004557 A KR 20077004557A KR 100870940 B1 KR100870940 B1 KR 100870940B1
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KR
South Korea
Prior art keywords
group
resist
protective film
film
forming
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Expired - Fee Related
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KR1020077004557A
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English (en)
Korean (ko)
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KR20070038568A (ko
Inventor
코타로 엔도
마사아키 요시다
케이타 이시즈카
Original Assignee
토쿄오오카코교 가부시기가이샤
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Publication of KR20070038568A publication Critical patent/KR20070038568A/ko
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Publication of KR100870940B1 publication Critical patent/KR100870940B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020077004557A 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법 Expired - Fee Related KR100870940B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00224810 2004-07-30
JP2004224810 2004-07-30
JP2004228695A JP4368266B2 (ja) 2004-07-30 2004-08-04 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JPJP-P-2004-00228695 2004-08-04

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020087018135A Division KR100952174B1 (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법
KR1020087018134A Division KR20080075557A (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법

Publications (2)

Publication Number Publication Date
KR20070038568A KR20070038568A (ko) 2007-04-10
KR100870940B1 true KR100870940B1 (ko) 2008-12-01

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020077004557A Expired - Fee Related KR100870940B1 (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법
KR1020087018134A Withdrawn KR20080075557A (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법
KR1020087018135A Expired - Fee Related KR100952174B1 (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020087018134A Withdrawn KR20080075557A (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법
KR1020087018135A Expired - Fee Related KR100952174B1 (ko) 2004-07-30 2005-07-29 레지스트 보호막 형성용 재료 및 이것을 이용한 레지스트패턴 형성방법

Country Status (7)

Country Link
US (1) US7879529B2 (https=)
EP (1) EP1788438A4 (https=)
JP (1) JP4368266B2 (https=)
KR (3) KR100870940B1 (https=)
CN (1) CN101019076B (https=)
TW (1) TW200609682A (https=)
WO (1) WO2006011606A1 (https=)

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JP4368267B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4368266B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
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JP5151038B2 (ja) * 2006-02-16 2013-02-27 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、半導体装置及びその製造方法
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JP4832142B2 (ja) * 2006-03-31 2011-12-07 株式会社Ｓｏｋｕｄｏ 基板処理装置
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WO2007131792A1 (en) * 2006-05-17 2007-11-22 Micronic Laser Systems Ab Process for immersion exposure of a substrate
JP5049513B2 (ja) * 2006-05-30 2012-10-17 Ｊｓｒ株式会社 保護膜形成用樹脂組成物
JP2008037973A (ja) * 2006-08-04 2008-02-21 Daicel Chem Ind Ltd 半導体レジスト保護膜用樹脂及び半導体の製造方法
JP2008050422A (ja) * 2006-08-23 2008-03-06 Daicel Chem Ind Ltd 半導体レジストの保護膜用樹脂及び半導体の製造方法
JP5024293B2 (ja) 2006-09-27 2012-09-12 Ｊｓｒ株式会社 上層膜形成用組成物およびフォトレジストパターン形成方法
JP5088326B2 (ja) 2006-10-13 2012-12-05 Ｊｓｒ株式会社 上層膜形成用組成物及びフォトレジストパターン形成方法
JP5725020B2 (ja) 2010-05-18 2015-05-27 Jsr株式会社 液浸上層膜形成用組成物及びフォトレジストパターン形成方法
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
CN109369845B (zh) * 2018-09-07 2021-03-09 珠海雅天科技有限公司 一种焦深DOF大于或等于300nm的半导体ArF光刻胶树脂及其应用
JP2020067547A (ja) * 2018-10-24 2020-04-30 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物およびその使用
CN114063389B (zh) * 2020-07-31 2026-04-07 华为技术有限公司 图案化材料和图案化薄膜

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JPH0529212A (ja) * 1990-08-30 1993-02-05 American Teleph & Telegr Co <Att> デバイスの製造方法
JPH08254834A (ja) * 1995-03-15 1996-10-01 Shin Etsu Chem Co Ltd フォトレジストオーバーコート材料及びレジストパターン形成方法
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Also Published As

Publication number Publication date
KR20070038568A (ko) 2007-04-10
US20080311523A1 (en) 2008-12-18
EP1788438A1 (en) 2007-05-23
JP4368266B2 (ja) 2009-11-18
US7879529B2 (en) 2011-02-01
CN101019076A (zh) 2007-08-15
JP2006064711A (ja) 2006-03-09
KR20080075557A (ko) 2008-08-18
KR100952174B1 (ko) 2010-04-09
EP1788438A4 (en) 2009-07-29
TW200609682A (en) 2006-03-16
KR20080075558A (ko) 2008-08-18
TWI332123B (https=) 2010-10-21
WO2006011606A1 (ja) 2006-02-02
CN101019076B (zh) 2011-03-02

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