KR100857386B1 - 에스오아이 웨이퍼에 대한 열처리 방법 - Google Patents
에스오아이 웨이퍼에 대한 열처리 방법 Download PDFInfo
- Publication number
- KR100857386B1 KR100857386B1 KR1020060138044A KR20060138044A KR100857386B1 KR 100857386 B1 KR100857386 B1 KR 100857386B1 KR 1020060138044 A KR1020060138044 A KR 1020060138044A KR 20060138044 A KR20060138044 A KR 20060138044A KR 100857386 B1 KR100857386 B1 KR 100857386B1
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- South Korea
- Prior art keywords
- heat treatment
- wafer
- soi wafer
- soi
- present
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 230000008569 process Effects 0.000 title claims abstract description 51
- 238000010438 heat treatment Methods 0.000 claims abstract description 77
- 230000007547 defect Effects 0.000 claims abstract description 12
- 238000000926 separation method Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000007796 conventional method Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (3)
- 기준 웨이퍼와 이온 주입된 결합 웨이퍼를 접합시킨 후, 층분리 방법에 의해 제조되는 SOI 웨이퍼 내의 손상층 또는 결함층의 제거 및 표면 미소 거칠기 개선을 위해 진행되는 SOI 웨이퍼에 대한 열처리 방법에 있어서,상기 SOI 웨이퍼에 대한 열처리 방법은, 하나의 열처리 공정 시스템 내에서 진행하되, 열처리 온도 또는 열처리 시간 조건을 달리하여 구분되는 적어도 2 단계 이상의 다중 단계의 열처리 공정으로 진행하되,상기 다중 단계의 열처리 공정은, 제1단계열처리단계 및 제2단계열처리단계의 2단계로 구분되어 연속적으로 진행하되,상기 제1열처리단계는, 1,100 내지 1,150℃의 온도에서 10초 내지 60분 동안 진행하며,상기 제2열처리단계는, 1,200 내지 1,400℃의 온도에서 10 내지 60초 동안 진행하는 것을 특징으로 하는 SOI 웨이퍼에 대한 열처리 방법.
- 제1항에 있어서,상기 SOI 웨이퍼에 대한 하나의 열처리 공정 시스템 내에서 진행되는 다중 단계로 구별되는 각각의 열처리단계는, 산소, 수소 및 아르곤 중 선택된 하나의 기체 또는 이들 중 선택된 둘 이상의 혼합기체의 분위기 하에서 열처리 공정이 진행되는 것을 특징으로 하는 SOI 웨이퍼에 대한 열처리 방법.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060138044A KR100857386B1 (ko) | 2006-12-29 | 2006-12-29 | 에스오아이 웨이퍼에 대한 열처리 방법 |
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KR1020060138044A KR100857386B1 (ko) | 2006-12-29 | 2006-12-29 | 에스오아이 웨이퍼에 대한 열처리 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20080062354A KR20080062354A (ko) | 2008-07-03 |
KR100857386B1 true KR100857386B1 (ko) | 2008-09-05 |
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KR1020060138044A KR100857386B1 (ko) | 2006-12-29 | 2006-12-29 | 에스오아이 웨이퍼에 대한 열처리 방법 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2955697B1 (fr) * | 2010-01-25 | 2012-09-28 | Soitec Silicon Insulator Technologies | Procede de recuit d'une structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980038049A (ko) * | 1996-11-23 | 1998-08-05 | 김영환 | Soi 웨이퍼 제조방법 |
JPH10242154A (ja) | 1997-02-24 | 1998-09-11 | Mitsubishi Materials Shilicon Corp | 薄膜半導体基板の表面処理方法 |
KR20000005996A (ko) * | 1998-06-09 | 2000-01-25 | 와다 다다시 | 실리콘웨이퍼의열처리방법및실리콘웨이퍼 |
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2006
- 2006-12-29 KR KR1020060138044A patent/KR100857386B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980038049A (ko) * | 1996-11-23 | 1998-08-05 | 김영환 | Soi 웨이퍼 제조방법 |
JPH10242154A (ja) | 1997-02-24 | 1998-09-11 | Mitsubishi Materials Shilicon Corp | 薄膜半導体基板の表面処理方法 |
KR20000005996A (ko) * | 1998-06-09 | 2000-01-25 | 와다 다다시 | 실리콘웨이퍼의열처리방법및실리콘웨이퍼 |
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