KR100856972B1 - 감광성 수지 조성물 - Google Patents

감광성 수지 조성물 Download PDF

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Publication number
KR100856972B1
KR100856972B1 KR1020010081310A KR20010081310A KR100856972B1 KR 100856972 B1 KR100856972 B1 KR 100856972B1 KR 1020010081310 A KR1020010081310 A KR 1020010081310A KR 20010081310 A KR20010081310 A KR 20010081310A KR 100856972 B1 KR100856972 B1 KR 100856972B1
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South Korea
Prior art keywords
delete delete
group
pattern
excimer laser
photomask
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Expired - Fee Related
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KR1020010081310A
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English (en)
Korean (ko)
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KR20020052941A (ko
Inventor
소노꼬 미기따까
다다시 아라이
쯔또무 아라끼
사또시 모모세
오사무 야마구찌
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020052941A publication Critical patent/KR20020052941A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020010081310A 2000-12-25 2001-12-19 감광성 수지 조성물 Expired - Fee Related KR100856972B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00391795 2000-12-25
JP2000391795A JP3932805B2 (ja) 2000-12-25 2000-12-25 フォトマスク及びそれを用いた電子デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020080018853A Division KR20080027808A (ko) 2000-12-25 2008-02-29 포토마스크 및 그것을 이용한 전자 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20020052941A KR20020052941A (ko) 2002-07-04
KR100856972B1 true KR100856972B1 (ko) 2008-09-04

Family

ID=18857887

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020010081310A Expired - Fee Related KR100856972B1 (ko) 2000-12-25 2001-12-19 감광성 수지 조성물
KR1020080018853A Ceased KR20080027808A (ko) 2000-12-25 2008-02-29 포토마스크 및 그것을 이용한 전자 장치의 제조 방법

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Application Number Title Priority Date Filing Date
KR1020080018853A Ceased KR20080027808A (ko) 2000-12-25 2008-02-29 포토마스크 및 그것을 이용한 전자 장치의 제조 방법

Country Status (4)

Country Link
US (1) US6790564B2 (enExample)
JP (1) JP3932805B2 (enExample)
KR (2) KR100856972B1 (enExample)
TW (1) TW544756B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004029081A (ja) * 2002-06-21 2004-01-29 Canon Inc 位相シフトマスク、該位相シフトマスクを用いたパタン形成法、該パタン形成法による固体素子
JP4080813B2 (ja) * 2002-08-09 2008-04-23 株式会社東芝 マーク設計システム、マーク設計方法、マーク設計プログラムおよびこのマーク設計方法を用いた半導体装置の製造方法
US6818910B2 (en) * 2002-08-23 2004-11-16 Micron Technology, Inc. Writing methodology to reduce write time, and system for performing same
US7038328B2 (en) * 2002-10-15 2006-05-02 Brewer Science Inc. Anti-reflective compositions comprising triazine compounds
CN1285112C (zh) 2002-11-26 2006-11-15 松下电器产业株式会社 掩模图形的检验方法和检验装置
KR20150022560A (ko) * 2013-08-23 2015-03-04 삼성전기주식회사 인쇄회로기판 및 인쇄회로기판 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784364A (ja) * 1993-09-10 1995-03-31 Matsushita Electric Ind Co Ltd レジスト組成物及びこれを用いた微細パターン形成方法
JPH08217815A (ja) * 1995-02-13 1996-08-27 Japan Synthetic Rubber Co Ltd 化学増幅型感放射線性樹脂組成物
JPH08286384A (ja) * 1995-04-14 1996-11-01 Hitachi Ltd パタン形成方法及びそれに用いるフォトレジスト材料
JPH09197669A (ja) * 1996-01-23 1997-07-31 Hitachi Ltd 感光性組成物及びそれを用いたパタン形成方法
KR19980024728A (ko) * 1996-09-20 1998-07-06 고사이 아키오 포지티브형 레지스트 조성물

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630129A (en) * 1979-08-21 1981-03-26 Agency Of Ind Science & Technol Manufacture of photomask
JPH01102567A (ja) * 1987-10-16 1989-04-20 Hitachi Denshi Ltd 露光マスクの製造方法
JP2538043B2 (ja) * 1989-04-05 1996-09-25 松下電器産業株式会社 パタ―ン形成用材料とそれを用いたパタ―ン形成基板の作製方法
US4975062A (en) * 1989-05-19 1990-12-04 Motorola, Inc. Hermaphroditic connector
JP3105234B2 (ja) 1990-09-28 2000-10-30 株式会社日立製作所 半導体装置の製造方法
JPH05289307A (ja) * 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
US5354632A (en) * 1992-04-15 1994-10-11 Intel Corporation Lithography using a phase-shifting reticle with reduced transmittance
JPH07239547A (ja) * 1993-04-16 1995-09-12 Hitachi Ltd レジスト及びそのパターン形成方法
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
JP2847479B2 (ja) * 1994-03-28 1999-01-20 和光純薬工業株式会社 遠紫外線用レジスト組成物及びこれを用いた微細パターン形成方法
JP3301215B2 (ja) * 1994-05-31 2002-07-15 ソニー株式会社 ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスクの作製に用いる半透明部形成材料、及びハーフトーン型位相シフトマスクの作製方法
US6136498A (en) * 1996-06-28 2000-10-24 International Business Machines Corporation Polymer-bound sensitizer
TW354392B (en) * 1996-07-03 1999-03-11 Du Pont Photomask blanks
JPH11174669A (ja) * 1997-12-09 1999-07-02 Hitachi Ltd レジスト組成物及びそれを用いたパタン形成方法
JP3330559B2 (ja) * 1999-03-15 2002-09-30 日本圧着端子製造株式会社 プリント配線板用コネクタ
JP2002131883A (ja) * 2000-10-27 2002-05-09 Hitachi Ltd フォトマスクの製造方法およびフォトマスク

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784364A (ja) * 1993-09-10 1995-03-31 Matsushita Electric Ind Co Ltd レジスト組成物及びこれを用いた微細パターン形成方法
JPH08217815A (ja) * 1995-02-13 1996-08-27 Japan Synthetic Rubber Co Ltd 化学増幅型感放射線性樹脂組成物
JPH08286384A (ja) * 1995-04-14 1996-11-01 Hitachi Ltd パタン形成方法及びそれに用いるフォトレジスト材料
JPH09197669A (ja) * 1996-01-23 1997-07-31 Hitachi Ltd 感光性組成物及びそれを用いたパタン形成方法
KR19980024728A (ko) * 1996-09-20 1998-07-06 고사이 아키오 포지티브형 레지스트 조성물

Also Published As

Publication number Publication date
JP2002196483A (ja) 2002-07-12
KR20020052941A (ko) 2002-07-04
US20020086222A1 (en) 2002-07-04
KR20080027808A (ko) 2008-03-28
TW544756B (en) 2003-08-01
JP3932805B2 (ja) 2007-06-20
US6790564B2 (en) 2004-09-14

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