KR100843106B1 - 진공처리장치 - Google Patents
진공처리장치 Download PDFInfo
- Publication number
- KR100843106B1 KR100843106B1 KR1020080024085A KR20080024085A KR100843106B1 KR 100843106 B1 KR100843106 B1 KR 100843106B1 KR 1020080024085 A KR1020080024085 A KR 1020080024085A KR 20080024085 A KR20080024085 A KR 20080024085A KR 100843106 B1 KR100843106 B1 KR 100843106B1
- Authority
- KR
- South Korea
- Prior art keywords
- lift
- lift pin
- substrate
- lift pins
- chamber body
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 238000009489 vacuum treatment Methods 0.000 description 9
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L21/205—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (2)
- 진공처리를 위한 처리공간이 내부에 형성된 챔버본체와;상기 챔버본체 내에 설치되어 진공처리될 기판을 지지하는 기판지지대와;상기 기판지지대에 형성된 리프트핀공을 따라서 상하이동이 가능하도록 설치된 복수개의 리프트핀들과, 상기 챔버본체의 외부에 설치되고 상기 리프트핀들 중 중앙부분에 위치한 리프트핀들과 결합되어 상하로 이동시키도록 하는 하나 이상의 제1리프트핀구동부와, 상기 챔버본체의 외부에 설치되고 상기 나머지 리프트핀들과 결합되어 상하로 이동시키도록 하는 하나 이상의 제2리프트핀구동부를 포함하는 리프트핀조립체를 포함하며,상기 제1리프트핀구동부 및 상기 제2리프트핀구동부는 상기 리프트핀들이 각각 편차를 두고 기판을 지지하도록 제어되는 것을 특징으로 하는 진공처리장치.
- 제 1 항에 있어서,상기 제1리프트핀구동부 및 상기 제2리프트핀구동부는 각각 독립적으로 구동되는 것을 특징으로 하는 진공처리장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080024085A KR100843106B1 (ko) | 2008-03-14 | 2008-03-14 | 진공처리장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080024085A KR100843106B1 (ko) | 2008-03-14 | 2008-03-14 | 진공처리장치 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070010205A Division KR100843107B1 (ko) | 2007-01-31 | 2007-01-31 | 진공처리장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100843106B1 true KR100843106B1 (ko) | 2008-07-03 |
Family
ID=39823494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080024085A KR100843106B1 (ko) | 2008-03-14 | 2008-03-14 | 진공처리장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100843106B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101810142B1 (ko) * | 2016-03-02 | 2017-12-19 | 심경식 | 기판 처리공간의 높이 측정 장치 |
WO2020020462A1 (en) * | 2018-07-26 | 2020-01-30 | Applied Materials, Inc. | Holding device for holding a carrier or a component in a vacuum chamber, use of a holding device for holding a carrier or a component in a vacuum chamber, apparatus for handling a carrier in a vacuum chamber, and vacuum deposition system |
JP2020155458A (ja) * | 2019-03-18 | 2020-09-24 | 東京エレクトロン株式会社 | 基板リフト機構、基板支持器、及び基板処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204430A (ja) * | 1998-01-16 | 1999-07-30 | Tokyo Electron Ltd | 基板処理装置 |
KR20040039792A (ko) * | 2002-11-04 | 2004-05-12 | 삼성전자주식회사 | 반도체 제조설비용 프로세스챔버 |
KR20060121569A (ko) * | 2005-05-24 | 2006-11-29 | 주성엔지니어링(주) | 리프트핀 어셈블리 |
-
2008
- 2008-03-14 KR KR1020080024085A patent/KR100843106B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204430A (ja) * | 1998-01-16 | 1999-07-30 | Tokyo Electron Ltd | 基板処理装置 |
KR20040039792A (ko) * | 2002-11-04 | 2004-05-12 | 삼성전자주식회사 | 반도체 제조설비용 프로세스챔버 |
KR20060121569A (ko) * | 2005-05-24 | 2006-11-29 | 주성엔지니어링(주) | 리프트핀 어셈블리 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101810142B1 (ko) * | 2016-03-02 | 2017-12-19 | 심경식 | 기판 처리공간의 높이 측정 장치 |
WO2020020462A1 (en) * | 2018-07-26 | 2020-01-30 | Applied Materials, Inc. | Holding device for holding a carrier or a component in a vacuum chamber, use of a holding device for holding a carrier or a component in a vacuum chamber, apparatus for handling a carrier in a vacuum chamber, and vacuum deposition system |
JP2020155458A (ja) * | 2019-03-18 | 2020-09-24 | 東京エレクトロン株式会社 | 基板リフト機構、基板支持器、及び基板処理装置 |
JP7198694B2 (ja) | 2019-03-18 | 2023-01-04 | 東京エレクトロン株式会社 | 基板リフト機構、基板支持器、及び基板処理装置 |
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