KR100841859B1 - 레지스트 하층막 재료 및 패턴 형성 방법 - Google Patents
레지스트 하층막 재료 및 패턴 형성 방법 Download PDFInfo
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- KR100841859B1 KR100841859B1 KR1020040044766A KR20040044766A KR100841859B1 KR 100841859 B1 KR100841859 B1 KR 100841859B1 KR 1020040044766 A KR1020040044766 A KR 1020040044766A KR 20040044766 A KR20040044766 A KR 20040044766A KR 100841859 B1 KR100841859 B1 KR 100841859B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
Abstract
Description
Claims (5)
- 리소그래피에서 사용되는 다층 레지스트 막의 레지스트 하층막 재료로서, 적어도 하기 화학식 1로 표시되는 반복 단위를 갖는 중합체를 포함하는 것을 특징으로 하는 레지스트 하층막 재료.<화학식 1>식 중, R1 내지 R4는 상호 독립적으로 수소 원자, 수산기, 탄소수 1 내지 20의 알킬기, 탄소수 1 내지 20의 알콕시기, 탄소수 1 내지 20의 알콕시카르보닐기, 아세톡시기, 탄소수 6 내지 10의 아릴기, 탄소수 1 내지 6의 히드록시알킬기, 히드록시알콕시기, 이소시아네이트기, 글리시딜에테르기 중 어느 하나, 또는 하기 화학식 2로 표시되는 유기기이고, R1 내지 R4 중 1개 이상은 하기 화학식 2로 표시되는 유기기이고, Z는 지환식 탄화수소기이고, a, b는 양수이다.<화학식 2>식 중, R5는 탄소수 1 내지 4의 알킬렌기이고, R6은 탄소수 4 내지 20의 환상 구조를 포함하는 알킬기, 또는 탄소수 6 내지 20의 아릴기이다.
- 제1항에 있어서, 상기 레지스트 하층막 재료가 가교제, 산 발생제, 유기 용제 중 어느 하나 이상을 더 함유하는 것을 특징으로 하는 레지스트 하층막 재료.
- 리소그래피에 의해 기판에 패턴을 형성하는 방법으로서, 적어도 제1항 또는 제2항에 기재된 레지스트 하층막 재료를 이용하여 레지스트 하층막을 기판 상에 형성하고, 상기 하층막 위에 1층 이상의 포토레지스트 조성물의 레지스트 상층막을 형성하여 다층 레지스트 막을 형성하며, 이 다층 레지스트 막의 패턴 회로 영역을 노광한 후, 현상액으로 현상하여 레지스트 상층막에 레지스트 패턴을 형성하고, 상기 패턴이 형성된 레지스트 상층막을 마스크로 하여 레지스트 하층막을 에칭하며, 또한 패턴이 형성된 다층 레지스트 막을 마스크로 하여 기판을 에칭하여 기판에 패턴을 형성하는 것을 특징으로 하는 패턴 형성 방법.
- 제3항에 있어서, 상기 레지스트 상층막으로서, 규소 원자를 함유한 것을 사용하고, 상기 레지스트 상층막을 마스크로 한 하층막의 에칭을, 산소 가스를 주체로 하는 건식 에칭으로 행하는 것을 특징으로 하는 패턴 형성 방법.
- 제3항에 있어서, 상기 패턴이 형성된 다층 레지스트 막을 마스크로 한 기판의 에칭을, 프론계 가스, 염소계 가스, 브롬계 가스 중 어느 하나를 주체로 하는 건식 에칭으로 행하는 것을 특징으로 하는 패턴 형성 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003174020A JP4069025B2 (ja) | 2003-06-18 | 2003-06-18 | レジスト下層膜材料ならびにパターン形成方法 |
JPJP-P-2003-00174020 | 2003-06-18 |
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KR20040111087A KR20040111087A (ko) | 2004-12-31 |
KR100841859B1 true KR100841859B1 (ko) | 2008-06-27 |
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KR1020040044766A KR100841859B1 (ko) | 2003-06-18 | 2004-06-17 | 레지스트 하층막 재료 및 패턴 형성 방법 |
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US (1) | US7214743B2 (ko) |
JP (1) | JP4069025B2 (ko) |
KR (1) | KR100841859B1 (ko) |
TW (1) | TWI266967B (ko) |
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TWI278496B (en) | 2000-11-14 | 2007-04-11 | Jsr Corp | Anti-reflection coating forming composition |
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2003
- 2003-06-18 JP JP2003174020A patent/JP4069025B2/ja not_active Expired - Lifetime
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2004
- 2004-06-08 US US10/862,633 patent/US7214743B2/en active Active
- 2004-06-17 TW TW093117519A patent/TWI266967B/zh active
- 2004-06-17 KR KR1020040044766A patent/KR100841859B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06118651A (ja) * | 1992-10-08 | 1994-04-28 | Nippon Telegr & Teleph Corp <Ntt> | ポジ型レジスト材料 |
JPH08220750A (ja) * | 1995-02-20 | 1996-08-30 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
JP2001040293A (ja) | 1999-08-03 | 2001-02-13 | Jsr Corp | 反射防止膜形成組成物 |
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US20040259037A1 (en) | 2004-12-23 |
JP2005010431A (ja) | 2005-01-13 |
JP4069025B2 (ja) | 2008-03-26 |
KR20040111087A (ko) | 2004-12-31 |
US7214743B2 (en) | 2007-05-08 |
TWI266967B (en) | 2006-11-21 |
TW200528921A (en) | 2005-09-01 |
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