KR100832390B1 - 가열 장치 및 그 제조 방법 - Google Patents
가열 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100832390B1 KR100832390B1 KR1020070027155A KR20070027155A KR100832390B1 KR 100832390 B1 KR100832390 B1 KR 100832390B1 KR 1020070027155 A KR1020070027155 A KR 1020070027155A KR 20070027155 A KR20070027155 A KR 20070027155A KR 100832390 B1 KR100832390 B1 KR 100832390B1
- Authority
- KR
- South Korea
- Prior art keywords
- heating
- concave curved
- ceramic base
- curved portion
- hollow bar
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000005304 joining Methods 0.000 claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 238000000227 grinding Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 230000003746 surface roughness Effects 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 description 104
- 239000007789 gas Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
Abstract
Description
Claims (5)
- 판 형상의 가열 기체(基體)와, 이 가열 기체의 한쪽 면에 일단면이 접합된 중공 봉재(棒材)를 구비하고,상기 가열 기체는 상기 중공 봉재와의 접합부 근방에서, 이 중공 봉재의 외주면과 동일면으로 되는 측면부와, 이 측면부에 접속하는 오목한 곡면부를 포함하고, 상기 가열 기체와 상기 중공 봉재의 접합 계면의 단부가 이 가열 기체의 측면부와 중공 봉재의 외주면 사이에 위치하는 것을 특징으로 하는 가열 장치.
- 제1항에 있어서, 상기 오목한 곡면부의 곡률 반경(R)은 1∼10 mm인 것을 특징으로 하는 가열 장치.
- 제1항에 있어서, 상기 오목한 곡면부는 중공 봉재의 중심 축선을 포함하는 단면에서 타원의 호 형상인 것을 특징으로 하는 가열 장치.
- 제1항에 있어서, 상기 오목한 곡면부의 표면 거칠기는 중심선 평균 거칠기(Ra)로 0.8 ㎛ 이하인 것을 특징으로 하는 가열 장치.
- 가열 기체의 한쪽 면에 중공 봉재의 일단면을 접합하는 공정과, 이 가열 기체와 중공 봉재의 접합부 근방에 있어서의 가열 기체측에 형성된 오목한 곡면부를 연삭 가공하는 공정을 포함하는 청구항 제1항의 가열 장치의 제조 방법에 있어서,상기 연삭 가공을 연삭 지석의 입도를 325번 이상, 이송 속도를 0.2 mm/min 이하의 조건으로 행하는 것을 특징으로 하는 가열 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00076641 | 2006-03-20 | ||
JP2006076641A JP4731365B2 (ja) | 2006-03-20 | 2006-03-20 | 加熱装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070095239A KR20070095239A (ko) | 2007-09-28 |
KR100832390B1 true KR100832390B1 (ko) | 2008-05-26 |
Family
ID=38516705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070027155A KR100832390B1 (ko) | 2006-03-20 | 2007-03-20 | 가열 장치 및 그 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070215597A1 (ko) |
JP (1) | JP4731365B2 (ko) |
KR (1) | KR100832390B1 (ko) |
CN (1) | CN100518414C (ko) |
TW (1) | TW200746877A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5807032B2 (ja) * | 2012-03-21 | 2015-11-10 | 日本碍子株式会社 | 加熱装置及び半導体製造装置 |
CN108028220B (zh) * | 2016-08-10 | 2022-02-25 | 日本碍子株式会社 | 陶瓷加热器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990078162A (ko) * | 1998-03-24 | 1999-10-25 | 니시무로 타이죠 | 유도 가열 장치 |
JP2001230393A (ja) * | 1999-12-08 | 2001-08-24 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法並びに複合部材の分離装置 |
JP2001313157A (ja) * | 2000-04-26 | 2001-11-09 | Sumitomo Osaka Cement Co Ltd | 加熱装置 |
US6507006B1 (en) | 2000-02-25 | 2003-01-14 | Ibiden Co., Ltd. | Ceramic substrate and process for producing the same |
KR20030071598A (ko) * | 2002-12-11 | 2003-09-03 | 이비덴 가부시키가이샤 | 세라믹 히터 |
JP2004247745A (ja) * | 2001-02-09 | 2004-09-02 | Ngk Insulators Ltd | サセプターの支持構造 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3810216B2 (ja) * | 1998-07-01 | 2006-08-16 | 京セラ株式会社 | 試料加熱装置および処理装置並びにそれを用いた試料の処理方法 |
US6997993B2 (en) * | 2001-02-09 | 2006-02-14 | Ngk Insulators, Ltd. | Susceptor supporting construction |
JP3982674B2 (ja) * | 2001-11-19 | 2007-09-26 | 日本碍子株式会社 | セラミックヒーター、その製造方法および半導体製造装置用加熱装置 |
JP4311922B2 (ja) * | 2002-10-03 | 2009-08-12 | 住友電気工業株式会社 | セラミックス接合体、ウエハ保持体及び半導体製造装置 |
KR100796051B1 (ko) * | 2003-08-18 | 2008-01-21 | 동경 엘렉트론 주식회사 | 기판 유지구조물 및 기판 처리장치 |
JP4627164B2 (ja) * | 2003-08-18 | 2011-02-09 | 東京エレクトロン株式会社 | 基板保持構造物および基板処理装置 |
KR20060085848A (ko) * | 2005-01-25 | 2006-07-28 | 삼성전자주식회사 | 뒷면 연마 후 범프 형성 공정을 포함하는 반도체 웨이퍼제조 방법 |
-
2006
- 2006-03-20 JP JP2006076641A patent/JP4731365B2/ja active Active
-
2007
- 2007-03-13 TW TW096108565A patent/TW200746877A/zh unknown
- 2007-03-19 CN CNB2007100891222A patent/CN100518414C/zh active Active
- 2007-03-19 US US11/687,919 patent/US20070215597A1/en not_active Abandoned
- 2007-03-20 KR KR1020070027155A patent/KR100832390B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990078162A (ko) * | 1998-03-24 | 1999-10-25 | 니시무로 타이죠 | 유도 가열 장치 |
JP2001230393A (ja) * | 1999-12-08 | 2001-08-24 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法並びに複合部材の分離装置 |
US6507006B1 (en) | 2000-02-25 | 2003-01-14 | Ibiden Co., Ltd. | Ceramic substrate and process for producing the same |
JP2001313157A (ja) * | 2000-04-26 | 2001-11-09 | Sumitomo Osaka Cement Co Ltd | 加熱装置 |
JP2004247745A (ja) * | 2001-02-09 | 2004-09-02 | Ngk Insulators Ltd | サセプターの支持構造 |
KR20030071598A (ko) * | 2002-12-11 | 2003-09-03 | 이비덴 가부시키가이샤 | 세라믹 히터 |
Also Published As
Publication number | Publication date |
---|---|
JP2007257846A (ja) | 2007-10-04 |
TW200746877A (en) | 2007-12-16 |
KR20070095239A (ko) | 2007-09-28 |
CN100518414C (zh) | 2009-07-22 |
US20070215597A1 (en) | 2007-09-20 |
CN101043766A (zh) | 2007-09-26 |
JP4731365B2 (ja) | 2011-07-20 |
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